摘要:
There is provided an apparatus for treating a substrate using a plurality of treatment solutions in sequence. The apparatus includes treatment liquid collecting vessels for separately collecting used treatment solutions, and an exhaust member for separately discharging pollutant gases generated during a process.
摘要:
Provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes a housing providing a space for performing a process, and a plurality of support members vertically arranged in the housing at predetermined intervals to support edges of substrates, respectively.
摘要:
An apparatus is provided for supplying a plurality of chemicals or gases to the surface of a substrate to clean and dry the substrate. The apparatus includes a substrate support unit with a chuck on which a substrate is loaded, a bottom chamber having an open top and configured to surround the circumference of the chuck, a top chamber configured to open or close the top of the bottom chamber such that a drying treatment for the substrate is performed while the substrate is isolated from the outside, and an indirect injection nozzle installed at the edge of the top chamber and configured to inject drying fluid toward the center of the top chamber such that the drying fluid is indirectly injected to the substrate. According to the apparatus, it is possible to enhance a substrate drying efficiency, suppress external contamination, and prevent the formation of an oxide layer.
摘要:
Provided is an apparatus for supplying chemical liquid. The apparatus includes: a plurality of nozzles, each of which can be moved forward or backward and supplies chemical liquid; a nozzle cover which accommodates the nozzles therein and has an open end to allow each of the nozzles to move into or out of the nozzle cover; and a nozzle driver which moves each of the nozzles forward or backward.
摘要:
Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.
摘要:
A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes. After the wafers are transferred to a second process chamber being the other one of the process chambers to be subjected to the other processes, they are repositioned from a vertical state to a horizontal state. That is, the wafers are transferred along a loop shape to be processed.