公开(公告)号：US20070224820A1

公开(公告)日：2007-09-27

申请号：US10574113

申请日：2004-10-07

申请人： Joung-Hyeon Lim ,  Jung-Keun Cho ,  Kyo-Woog Koo ,  In-Ho Bang ,  Woo-Young Kim ,  Man-Seok Oh ,  Hyun-Jong Kim

发明人： Joung-Hyeon Lim ,  Jung-Keun Cho ,  Kyo-Woog Koo ,  In-Ho Bang ,  Woo-Young Kim ,  Man-Seok Oh ,  Hyun-Jong Kim

IPC分类号： H01L21/302

CPC分类号： H01L21/67207 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67745

摘要： A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes. After the wafers are transferred to a second process chamber being the other one of the process chambers to be subjected to the other processes, they are repositioned from a vertical state to a horizontal state. That is, the wafers are transferred along a loop shape to be processed.

摘要翻译： 用于清洁诸如半导体晶片的基板的设备包括装载/卸载部分，其中晶片从水平状态重新定位到垂直状态的对准部分，执行晶片的蚀刻处理，漂洗和干燥处理的清洁部件，并且具有 多个处理室堆叠，以及界面部分，其中设置传送槽以在处理室之间传送晶片。 当晶片在处理室之间转移时，转移浴用去离子水（DI水）填充，以防止它们暴露于空气中。 从加载/非拉伸部分引出的晶片从水平状态重新定位到垂直状态，并被转移到作为处理室之一进行一部分处理的第一处理室。 在将晶片转移到作为要进行其它处理的另一个处理室的第二处理室之后，它们从垂直状态重新定位到水平状态。 也就是说，晶片沿着要被处理的环形传送。

公开(公告)号：US07934513B2

公开(公告)日：2011-05-03

申请号：US10574113

申请日：2004-10-07

申请人： Joung-Hyeon Lim ,  Jung-Keun Cho ,  Kyo-Woog Koo ,  In-Ho Bang ,  Woo-Young Kim ,  Man-Seok Oh ,  Hyun-Jong Kim

发明人： Joung-Hyeon Lim ,  Jung-Keun Cho ,  Kyo-Woog Koo ,  In-Ho Bang ,  Woo-Young Kim ,  Man-Seok Oh ,  Hyun-Jong Kim

IPC分类号： B08B3/00

CPC分类号： H01L21/67207 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67745

摘要： A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes. After the wafers are transferred to a second process chamber being the other one of the process chambers to be subjected to the other processes, they are repositioned from a vertical state to a horizontal state. That is, the wafers are transferred along a loop shape to be processed.

摘要翻译： 用于清洁诸如半导体晶片的基板的设备包括装载/卸载部分，其中晶片从水平状态重新定位到垂直状态的对准部分，执行晶片的蚀刻处理，漂洗和干燥处理的清洁部件，并且具有 多个处理室堆叠，以及界面部分，其中设置传送槽以在处理室之间传送晶片。 当晶片在处理室之间转移时，转移浴用去离子水（DI水）填充，以防止它们暴露于空气中。 从加载/非拉伸部分引出的晶片从水平状态重新定位到垂直状态，并被转移到作为处理室之一进行一部分处理的第一处理室。 在将晶片转移到作为要进行其它处理的另一个处理室的第二处理室之后，它们从垂直状态重新定位到水平状态。 也就是说，晶片沿着要被处理的环形传送。

公开(公告)号：US07637272B2

公开(公告)日：2009-12-29

申请号：US11433403

申请日：2006-05-15

申请人： Jung-Keun Cho ,  Chang-Ro Yoon ,  Kyo-Woog Koo

发明人： Jung-Keun Cho ,  Chang-Ro Yoon ,  Kyo-Woog Koo

IPC分类号： B08B3/00

CPC分类号： H01L21/67028

摘要： The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber. The substrate clean and dry apparatus of the present invention generates fairly vertical and uniform gas flows over the surfaces of substrates in the drying chamber, and also evacuates the gas rapidly from the drying chamber, thereby enhancing efficiency of the drying process.

摘要翻译： 本发明提供了一种用于通过将衬底沉积到诸如清洁化学品或冲洗液体之类的清洁流体中然后干燥衬底来清洁诸如半导体晶片的衬底的装置和方法。 本发明的基板清洁干燥装置包括一个处理室，该处理室包括一个清洁室，该清洁室承载清洁流体并在底部排出清洁流体; 以及清洁室上方的干燥室。 处理室还包括用于从干燥室排出气体的排出装置，供应到干燥室中的气体。 排出装置位于清洁室和干燥室之间，并且通过力抽空气体，使得气体在干燥室中垂直向下驱动。 本发明的基板清洁和干燥装置在干燥室中的基板表面上产生相当垂直和均匀的气流，并且还从干燥室中迅速排出气体，从而提高干燥过程的效率。

公开(公告)号：US20060266386A1

公开(公告)日：2006-11-30

申请号：US11433403

申请日：2006-05-15

申请人： Jung-Keun Cho ,  Chang-Ro Yoon ,  Kyo-Woog Koo

发明人： Jung-Keun Cho ,  Chang-Ro Yoon ,  Kyo-Woog Koo

IPC分类号： B08B3/02

CPC分类号： H01L21/67028

摘要： The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber. The substrate clean and dry apparatus of the present invention generates fairly vertical and uniform gas flows over the surfaces of substrates in the drying chamber, and also evacuates the gas rapidly from the drying chamber, thereby enhancing efficiency of the drying process.

公开(公告)号：US07862765B2

公开(公告)日：2011-01-04

申请号：US12274631

申请日：2008-11-20

申请人： Ho-Soo Hwang ,  Jung-Keun Cho

发明人： Ho-Soo Hwang ,  Jung-Keun Cho

IPC分类号： B29C67/00

CPC分类号： B29C45/0013 ,  B29K2995/0005

摘要： Provided are an apparatus and method for synthesizing a conductive composite with enhanced electrical conductivity. The apparatus includes: an injection-molding machine which injection-molds pellets created by mixing carbon nanotubes (CNTs) with polymers; and an electric field generator which applies an electric field to the pellets that are melted while the melted pellets are injection-molded and thus rearranges the CNTs included in a composite into which the melted pellets are injection-molded.

摘要翻译： 提供一种用于合成具有增强的导电性的导电复合材料的装置和方法。 该装置包括：注射成型机，其通过将碳纳米管（CNT）与聚合物混合而产生的颗粒注射成型; 以及电场发生器，其在熔融的颗粒被注塑成型的同时将熔融的颗粒施加电场，从而重新排列包含在熔融颗粒被注射成型的复合材料中的CNT。

公开(公告)号：US20050247667A1

公开(公告)日：2005-11-10

申请号：US11084034

申请日：2005-03-21

申请人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

发明人： In-Jun Kim ,  Jung-Keun Cho ,  Jang-Seob Choi ,  Yong-Nam Choi ,  Jeong-Yong Bae

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/67051 ,  H01L21/67069

摘要： The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the wafer. The top edge and bottom of the wafer is etched by a wet etch, and a boundary of the non-etch portion and the edge of the wafer is etched by a dry etch.

摘要翻译： 本发明涉及用于蚀刻晶片的顶部边缘和底部的装置。 该装置包括用于支撑晶片的基板支撑部分和用于防止蚀刻流体流入晶片的非蚀刻部分的可移动保护部分。 通过湿式蚀刻蚀刻晶片的顶部边缘和底部，通过干蚀刻蚀刻非蚀刻部分和晶片边缘的边界。

公开(公告)号：US08834632B2

公开(公告)日：2014-09-16

申请号：US11987477

申请日：2007-11-30

申请人： Ho-Soo Hwang ,  Sung-Soo Kim ,  Jung-Keun Cho

发明人： Ho-Soo Hwang ,  Sung-Soo Kim ,  Jung-Keun Cho

IPC分类号： C01B31/02 ,  B01J19/00 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： C01B31/0233 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  Y10S977/843

摘要： In a method of manufacturing a carbon nanotube, a boat configured to receive substrates is positioned outside of a synthesis space where the carbon nanotube is synthesized. The substrates are loaded into the boat. The boat is then transferred to the synthesis space. A process for forming the carbon nanotube is performed on the substrates in the synthesis space to form the carbon nanotube. Thus, the carbon nanotube may be effectively manufactured.

摘要翻译： 在制造碳纳米管的方法中，构造成接收基板的舟皿位于合成碳纳米管的合成空间的外侧。 基板装载到船上。 然后将船转移到合成空间。 在合成空间的基板上进行形成碳纳米管的工序，形成碳纳米管。 因此，可以有效地制造碳纳米管。

公开(公告)号：US20100278713A1

公开(公告)日：2010-11-04

申请号：US11987477

申请日：2007-11-30

申请人： Ho-Soo Hwang ,  Sung-Soo Kim ,  Jung-Keun Cho

发明人： Ho-Soo Hwang ,  Sung-Soo Kim ,  Jung-Keun Cho

IPC分类号： C01B31/02 ,  B01J19/00

CPC分类号： C01B31/0233 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  Y10S977/843

摘要： In a method of manufacturing a carbon nanotube, a boat configured to receive substrates is positioned outside of a synthesis space where the carbon nanotube is synthesized. The substrates are loaded into the boat. The boat is then transferred to the synthesis space. A process for forming the carbon nanotube is performed on the substrates in the synthesis space to form the carbon nanotube. Thus, the carbon nanotube may be effectively manufactured.

摘要翻译： 在制造碳纳米管的方法中，构造成接收基板的舟皿位于合成碳纳米管的合成空间的外侧。 基板装载到船上。 然后将船转移到合成空间。 在合成空间的基板上进行形成碳纳米管的工序，形成碳纳米管。 因此，可以有效地制造碳纳米管。

公开(公告)号：US20060081269A1

公开(公告)日：2006-04-20

申请号：US11073687

申请日：2005-03-08

申请人： One-Vai Kim ,  Jae-Sun Han ,  Jeong-Yong Bae ,  Jung-Keun Cho

发明人： One-Vai Kim ,  Jae-Sun Han ,  Jeong-Yong Bae ,  Jung-Keun Cho

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B3/12

CPC分类号： H01L21/67051 ,  B08B3/024 ,  C23G5/00 ,  H01L21/67028

摘要： The present invention is directed to a method and an apparatus for cleaning and drying wafers. The apparatus includes an injection unit having first and second injection ports configured for injecting different fluids and arranged in a moving direction of the rose or on a line adjacent to the moving direction. The injection unit migrates straightly from the center of a wafer to the edge thereof, and the first and second injection ports are linearly arranged on a moving line of the nozzle.

摘要翻译： 本发明涉及一种用于清洗和干燥晶片的方法和设备。 该装置包括具有第一和第二注射端口的注射单元，该第一和第二注射端口配置用于注射不同的流体并沿着玫瑰的移动方向或与移动方向相邻的线布置。 注射单元从晶片的中心直线移动到其边缘，并且第一和第二注入口线性地布置在喷嘴的移动线上。

公开(公告)号：US20100284897A1

公开(公告)日：2010-11-11

申请号：US11984481

申请日：2007-11-19

申请人： Hyung- Joon Kim ,  Ho-Soo Hwang ,  Jung-Keun Cho

发明人： Hyung- Joon Kim ,  Ho-Soo Hwang ,  Jung-Keun Cho

IPC分类号： D01F9/12 ,  B01J19/00

CPC分类号： B82Y30/00 ,  B01J23/745 ,  B01J23/755 ,  B01J37/18 ,  B82Y40/00 ,  C01B32/16

摘要： An apparatus for synthesizing a carbon nanotube includes a reaction chamber, a cassette, a transferring member, a heater, a gas supply member and a gas exhausting part. The carbon nanotube is synthesized in the reaction chamber. The reaction chamber has a substantially vertical major axis. The cassette holds a plurality of substrates. The transferring member transfers the cassette along a direction substantially in parallel relative to the major axis to load/unload the cassette into/from the reaction chamber. The heater heats the reaction chamber. The gas supply member provides the reaction chamber with a gas for synthesizing the carbon nanotube. The gas exhausting member exhausts a remaining gas from the reaction chamber. Collecting the carbon nanotube may be facilitated and managing the reaction chamber may be effective to enhance a productivity of the carbon nanotube.

摘要翻译： 用于合成碳纳米管的装置包括反应室，盒，转印部件，加热器，气体供给部件和排气部。 在反应室中合成碳纳米管。 反应室具有基本垂直的长轴。 盒子保持多个基板。 传送构件沿着基本上相对于长轴平行的方向传送盒，以将盒装入/从反应室中卸载。 加热器加热反应室。 气体供给部件为反应室提供合成碳纳米管的气体。 排气部件从反应室排出剩余的气体。 可以促进收集碳纳米管，并且管理反应室可以有效地提高碳纳米管的生产率。