Abstract:
A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.yTiO.sub.2.z[(1-a)RE.sub.2 O.sub.3.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.25, x+y+z=1 and 0
Abstract translation:公开了一种介电陶瓷组合物,其主要包括:以氧化钡,氧化钛,稀土氧化物和氧化铋为主要成分的主要陶瓷组合物,该组成由xBaO.yTiO2.z [(1-a)RE2O3表示)。 aBi 2 O 3]其中RE表示至少一种稀土金属,0.10≤x≤0.20,0.60≤y≤0.75,0.10≤x≤0.25,x + y + z = 1和 0
Abstract:
A dielectric ceramic composition is disclosed which includes: a main ceramic composition of barium oxide and titanium oxide, or barium oxide, titanium oxide and at least one of strontium oxide, calcium oxide, zirconia and zinc oxide, which composition is represented by (1-a-b)BaO.multidot.aSrO.multidot.bCaO.multidot.x[(1-c)TiO.sub.2 .multidot.cZrO.sub.2 ].multidot.yZnO, where 3.1.ltoreq.x .ltoreq.5.4, 0.ltoreq.y.ltoreq.2.9, 0.ltoreq.a+b.ltoreq.0.4, 0.ltoreq.c.ltoreq.0.2; and a secondary component at least a part of which consists of a B.sub.2 O.sub.3 material or a glass material containing B.sub.2 O.sub.3 as one of glass components, the secondary component being added to the main ceramic composition, in an amount of 0.1-7.5 parts by weight of B.sub.2 O.sub.3 per 100 parts by weight of the main ceramic composition. Also disclosed are a method of preparing such a dielectric ceramic composition, a dielectric resonator for microwave application which uses the dielectric ceramic composition, or a dielectric filter having a plurality of such dielectric resonators, and a method of producing the dielectric resonator or dielectric filter.
Abstract translation:公开了一种电介质陶瓷组合物,其包括:氧化钡和氧化钛的主要陶瓷组合物,或氧化钡,氧化钛和氧化锶,氧化钙,氧化锆和氧化锌中的至少一种,该组成由(1- ab)BaOxaSrOxbCaOxx [(1-c)TiO 2 x CZrO 2] xyZnO,其中3.1 = x = 5.4,0 = = 2.9,0,a + b = 0.4,0, c = 0.2; 第二组分的至少一部分由B 2 O 3材料或含有作为玻璃组分之一的B 2 O 3的玻璃材料组成,次要组分以主要陶瓷组合物的形式加入0.1-7.5重量份的B2O3 每100重量份的主要陶瓷组合物。 还公开了制备这种介电陶瓷组合物的方法,使用该介电陶瓷组合物的微波应用的介质谐振器或具有多个此类介质谐振器的介质滤波器,以及制造介质谐振器或介质滤波器的方法。
Abstract:
A document processing system for processing documents by using structured keywords comprises an output system and a receiver system. The output system includes a first storage for storing a structured keyword dictionary containing structured keywords among which relations are systematically structured, and linkage unit providing linkage information for establishing correspondences between constituent parts of an input document and corresponding ones of the keywords. The receiver system is coupled to the output system and includes a second storage for storing structured keywords among which relations are systematically structured, and retrieving unit having inputs supplied with the document and the linkage information for retrieving the document to thereby form data of a predetermined edition format by using the structured keyword read out from the second storage. Data transfer between the output system and the receiver systems can be performed either on-line or off-line.
Abstract:
A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.multidot.yTiO.sub.2 .multidot.Z[(1-a)RE.sub.2 O.sub.3 .multidot.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10 .ltoreq.z.ltoreq.0.25, x+y+z=1 and 0
Abstract:
Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.
Abstract:
A latent curing agent for epoxy resin, characterized in that the latent curing agent is the hydrazides of the formula (I);(NH.sub.2 NHCOCH.sub.2 CH.sub.2).sub.2 N(CH.sub.2).sub.11 CONHNH.sub.2 (I)The present curing agent is useful in formulating storable, one-package, heat-curable epoxy resin-based compositions.
Abstract:
A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce buring without oxidation.
Abstract:
A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.
Abstract:
A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes, a metal protection plate formed to surround said target and having a first opening facing the front surface of the target, and a vacuum chamber for receiving the electrodes and the protection plate in a reduced-pressure condition during the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate further has a second opening which is formed separately from the first opening to decentralize target power in the inner space defined by the protection plate when the high-frequency bias sputtering process is effected such that the first opening is closed by the substrate electrode.
Abstract:
A semiconductor device has a passivation layer including a polyimide film. Argon ions are implanted in the polyimide film to convert it into an electrically stable insulating film.