Abstract:
A solid-state image pickup unit in which two neighboring horizontal lines are paired for scanning. In the vertical transfer, the photocharge signals on the two lines are transferred to different horizontal CCDs, which concurrently shift out their contents. One of the two horizontal lines is used exclusively for a luminance signal and the other for two color signals. The horizontal line used for color signals has alternating color filters. A switch is used to separate the two color signals resulting from these alternating color filters.
Abstract:
A color picture solid-state pickup element comprising a solid-state image sensor and a colored matrix microfilter. The image sensor has photo elements arranged in a matrix. The horizontal lines are paired into scanning lines. The scanning lines alternate between two fields, one field being read after the other. The microfilter has rows of uniform colors, with a row covering one horizontal line. Every other row is of a first primary or complementary color. The remaining rows alternate between two other primary or complementary colors.
Abstract:
A solid image pickup element for use in interlaced scanning in which at least two lines of photo-elements are simultaneously read in one interlaced scanning line. The lines are algebraically combined to reproduce the color signals and different groups of lines are read for different interlace fields.
Abstract:
A solid-state image pickup device includes a semiconductor substrate and at least a layer of photosensitive semiconductor having a semiconductor material in which photocarriers are excited with a light incident thereto. The photosensitive semiconductor layer is disposed above one principal surface of the semiconductor substrate and has such a thickness as to allow a portion of the incident light to pass therethrough to the semiconductor substrate. The semiconductor substrate and photosensitive semiconductor layer forms an array of photosensitive areas associated with pixels of a picture. Each of the photosensitive areas includes a connecting element for conducting electric charges from the photosensitive semiconductor layer, a photosensitive region which is formed in the one principal surface of the semiconductor substrate and in which photocarriers are excited with a light incident thereto, a first switching element formed in the one principal surface of the semiconductor substrate and linked to the photosensitive region for producing a signal associated with electric charges in the photosensitive region, a second switching element formed in the one principal surface of the semiconductor substrate and linked to the connecting element for producing a signal associated with electric charges conducted by the connecting element, and an electrode formed on the photosensitive semiconductor layer and being cooperative with the connecting element for establishing an electric field in the photosensitive semiconductor layer substantially in parallel with the principal surface of the photosensitive semiconductor layer.
Abstract:
A wiring configuration for thin film magnetic recording and reproducing heads. The inside end of the windings of the thin film magnetic recording head extends through an insulator to contact a bottom permalloy layer. A source of driving current is connected through a first conductor to the bottom permalloy layer and through a second conductor to the outside end of the windings. Thus, the windings of the thin film magnetic recording head are driven without the use of an overpass conductor. The bottom permalloy conductor can be divided so that the magnetic core formed by a first portion of the permalloy layer and the pole piece is insulated from a second portion of said bottom permalloy layer which receives the driving current.
Abstract:
A solid-state image pickup device for an electronic camera or the like in which the total picture-taking time is reduced by reducing the time required for performing photometric measurements, which are a necessary preliminary to the actual photographing operation. The light detecting elements of the pickup device are read out for purposes of the photometric measurements at a rate an integer multiple of the rate employed for the ordinary photographing operation.
Abstract:
A method for compensating changes which would otherwise be produced in a video output signal when the shutter speed exceeds a certain value, even though the same light level of the received image is maintained on the image pickup. In one embodiment, the shutter speed and/or aperture setting are adjusted to compensate. The amplification factor of the output video signal can also be adjusted. In other embodiments, gamma correction is effected separately for each primary color signal to compensate for the changes which affect the color signals in different amounts as the shutter speed is increased.
Abstract:
An image sensor in which charge is transferred from an array of photosensing elements to a plurality of vertical CCDs arranged between columns of the photosensing element. The CCD channels are all gated near their ends by a first MOS electrode. Thereafter, separately controlled second MOS electrode inject the current in the channels into the substrate, from which it can be read. Preferably, the first MOS electrode has a tooth shape with the second MOS electrode in a staggered arrangement near the tooth side to reduce cross-channel interference. Also preferably, the substrate around the second electrodes is isolated.
Abstract:
An imaging apparatus includes a solid-state image pickup device having an array of photosensitive cells formed in a photoconductive layer on a semiconductor substrate, an optical system for focusing an image of an object on the cell array, an optical shutter for introducing light incident to the optical system to the cell array for a desired exposure time period, a read circuit for sequentially reading out video signals from the photosensitive cells, a storage unit for temporarily storing the video signals read out by the read circuit, an operational unit for reading out the stored picture element signals from the storage unit to form color-separated component video signals, and a control unit for controlling the read circuit, the storage unit, and the operational unit in response to the shutter. The control unit causes the read circuit to read out a field of picture element signals from the cells at each of three time points included in a time period continuing from the initiation of the exposure time period to the end of an afterimage rise-time of the solid-state image pickup device. The operational unit forms three color-separated component video signals from the three fields of picture element signals stored in the storage unit.
Abstract:
A process for manufacturing a thin film magnetic head, the improvement wherein a metal, alloy or mixture thereof which improves the surface characteristics of a vacuum baked photoresist is deposited on the vacuum baked photoresist to thereby improve adhesion of a subsequently deposited layer.