公开(公告)号：US07342752B1

公开(公告)日：2008-03-11

申请号：US10769239

申请日：2004-01-31

申请人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T Krounbi

发明人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T Krounbi

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the magnetoresistive sensor. The bias structure includes an underlayer, a bias layer over the underlayer, and at least one dusting layer directly below at least one of the underlayer or the bias layer.

摘要翻译： 磁阻读取头包括磁阻传感器和与磁阻传感器相邻的偏置结构。 偏置结构为磁阻传感器提供静磁偏置场。 偏置结构包括底层，底层上的偏置层，以及直接位于底层或偏置层中的至少一个的至少一个除尘层。

公开(公告)号：US07286329B1

公开(公告)日：2007-10-23

申请号：US10788656

申请日：2004-02-27

申请人： Yingjian Chen ,  Wei Zhang ,  Mohamad T. Krounbi ,  Satoru Araki ,  Jinqiu Zhang

发明人： Yingjian Chen ,  Wei Zhang ,  Mohamad T. Krounbi ,  Satoru Araki ,  Jinqiu Zhang

IPC分类号： G11B5/39

CPC分类号： G01R31/318357 ,  G11B5/3932

摘要： A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.

摘要翻译： 公开了一种具有浅连续结的磁传感器。 这种传感器可以大大提高批量生产头部的产量，特别是对于大型晶片。 磁偏置层可以与传感器的自由层对准，从而提高性能。 铣削可以在穿透反铁磁层之前终止，使得例如反铁磁层可以显着地延伸超过传感器的自由和固定层。

公开(公告)号：US07006327B2

公开(公告)日：2006-02-28

申请号：US10375539

申请日：2003-02-27

申请人： Mohamad T. Krounbi ,  Ming Zhao ,  Yining Hu ,  Jim Watterston

发明人： Mohamad T. Krounbi ,  Ming Zhao ,  Yining Hu ,  Jim Watterston

IPC分类号： G11B5/147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A writer for magnetic recording heads. The writer includes a bottom magnetic pole and a write gap formed over the bottom pole and a coil trench formed in the bottom pole. A top magnetic pole is provided as two layers with the first layer including front and back tips with spaced apart walls positioned adjacent the trench bottom defining trench sides. A pole cover layer is included that is made up of a thin layer of insulating material deposited to cover the sides and bottom of the coil trench. A bottom coil is formed on the pole cover layer in the bottom of the coil trench and coil insulation is provided between the coil elements and adjacent the trench walls and covering the coil. A top coil with insulation is formed over the planarized bottom coil insulation and the top pole second layer is formed over the top coil.

摘要翻译： 磁记录头的作者。 写入器包括形成在底极上的底部磁极和写入间隙以及形成在底部极中的线圈沟槽。 顶部磁极设置为两层，其中第一层包括前部和后部末端，间隔开的壁定位在沟槽底部限定沟槽侧面附近。 包括极覆盖层，其由沉积以覆盖线圈沟槽的侧面和底部的绝缘材料的薄层构成。 底线圈形成在线圈沟槽底部的极覆盖层上，线圈绝缘体设置在线圈元件之间并邻近沟槽壁并覆盖线圈。 在平坦化的底部线圈绝缘体上形成具有绝缘的顶部线圈，并且顶部第二层形成在顶部线圈上。

公开(公告)号：US5435053A

公开(公告)日：1995-07-25

申请号：US205006

申请日：1994-03-02

申请人： Mohamad T. Krounbi ,  James H. Lee

发明人： Mohamad T. Krounbi ,  James H. Lee

IPC分类号： G11B5/00 ,  G11B5/31 ,  G11B5/39 ,  G11B5/48 ,  G11B3/42

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/312 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/488 ,  G11B5/00 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49064

摘要： An improved method of manufacturing is provided for making an improved merged MR head. The method employs a photoresist mask with appropriately-sized openings for simultaneously etching numerous vias to various depths over a set time period. After formation of the vias, a single photoresist mask is employed to pattern in one step gap layers G3, G2, G1 and a first shield layer S1 to the desired lateral configuration for the merged MR head. Subsequent to patterning these thin film layers, double insulation layers I2 and I3 are individually soft baked on top of the coil structure of the head followed by patterning of the layers I2/I3 by a single photoresist mask. These layers are then hard baked to retain the desired smooth configuration of the layers. The improved merged MR head has a smooth configuration to its top pole piece P2 because of the smooth configuration of the I2/I3 layer so that flux leakage and saturation problems are minimized.

摘要翻译： 提供了一种改进的制造方法，用于制造改进的合并MR头。 该方法采用具有适当大小的开口的光致抗蚀剂掩模，用于在设定的时间段内同时将多个通孔蚀刻到各种深度。 在形成通孔之后，使用单个光致抗蚀剂掩模将一级间隙层G3，G2，G1和第一屏蔽层S1图案化成用于合并的MR头的期望的横向配置。 在图案化这些薄膜层之后，双重绝缘层I2和I3在头部的线圈结构的顶部上单独软烘烤，然后通过单个光致抗蚀剂掩模图案化层I2 / I3。 然后将这些层硬烘烤以保持层的期望的平滑构型。 由于I2 / I3层的平滑配置，改进的合并MR磁头对其顶极片P2具有平滑的配置，使得磁通泄漏和饱和问题最小化。

公开(公告)号：US5285339A

公开(公告)日：1994-02-08

申请号：US843702

申请日：1992-02-28

申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3903

摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.

摘要翻译： 具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。 软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。 仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。 单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

公开(公告)号：US5079035A

公开(公告)日：1992-01-07

申请号：US629503

申请日：1990-12-18

申请人： Mohamad T. Krounbi ,  Otto Voegeli ,  Po-Kang Wang

发明人： Mohamad T. Krounbi ,  Otto Voegeli ,  Po-Kang Wang

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49067

摘要： A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed which extends over substantially only the central active region and in which a hard magnetic layer is formed in each end region. The hard magnetic layers form an abutting junction having electrical and magnetic continuity with the MR layer to produce a longitudinal bias in the MR sensor. The transducer is produced by a method in which the same stencil defines the extent of both the MR layer and the hard magnetic layers so that the abutting junctions are formed easily and reliably.

摘要翻译： 磁阻（MR）读取传感器，其具有被中心有源区域分开的被动端区域，其中形成MR层，其基本上仅在中心有源区域上延伸，并且在每个端部区域中形成硬磁性层。 硬磁性层形成与MR层具有电连接性和磁性连续性的邻接结，以在MR传感器中产生纵向偏置。 传感器通过一种方法制造，其中相同的模版限定了MR层和硬磁性层的程度，使得邻接接合部容易且可靠地形成。

公开(公告)号：US07882618B2

公开(公告)日：2011-02-08

申请号：US11957468

申请日：2007-12-16

申请人： David P. Druist ,  Mohamad T. Krounbi ,  David J. Seagle

发明人： David P. Druist ,  Mohamad T. Krounbi ,  David J. Seagle

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/3106 ,  G11B5/3932 ,  G11B5/40 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Methods of fabricating magnetic read heads are provided which reduce the width of the scratch exposure region of a read head. During normal fabrication processes, a read head is formed with a first shield, a read element formed on the first shield, and hard bias layers formed on either side of the read element. The width of the read elements and the hard bias layers define an initial scratch exposure region. According to embodiments herein, a mask structure is formed to protect the read element and first portions of the hard bias layers proximate to the read element. A removal process is then performed to remove second portions of the hard bias layers that are not protected by the mask structure, which defines a final scratch exposure region that is smaller than the initial scratch exposure region.

摘要翻译： 提供制造磁读头的方法，其减小读头的划痕曝光区域的宽度。 在通常的制造过程中，读头形成有第一屏蔽，形成在第一屏蔽上的读取元件以及形成在读取元件两侧的硬偏置层。 读取元件和硬偏置层的宽度限定初始划痕曝光区域。 根据本文的实施例，形成掩模结构以保护读取元件和靠近读取元件的硬偏置层的第一部分。 然后执行去除处理以去除未被掩模结构保护的硬偏置层的第二部分，其限定小于初始划痕暴露区域的最终刮擦暴露区域。

公开(公告)号：US20090151151A1

公开(公告)日：2009-06-18

申请号：US11957468

申请日：2007-12-16

申请人： David P. Druist ,  Mohamad T. Krounbi ,  David J. Seagle

发明人： David P. Druist ,  Mohamad T. Krounbi ,  David J. Seagle

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/3106 ,  G11B5/3932 ,  G11B5/40 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Methods of fabricating magnetic read heads are provided which reduce the width of the scratch exposure region of a read head. During normal fabrication processes, a read head is formed with a first shield, a read element formed on the first shield, and hard bias layers formed on either side of the read element. The width of the read elements and the hard bias layers define an initial scratch exposure region. According to embodiments herein, a mask structure is formed to protect the read element and first portions of the hard bias layers proximate to the read element. A removal process is then performed to remove second portions of the hard bias layers that are not protected by the mask structure, which defines a final scratch exposure region that is smaller than the initial scratch exposure region.

摘要翻译： 提供制造磁读头的方法，其减小读头的划痕曝光区域的宽度。 在通常的制造过程中，读头形成有第一屏蔽，形成在第一屏蔽上的读取元件以及形成在读取元件两侧的硬偏置层。 读取元件和硬偏置层的宽度限定初始划痕曝光区域。 根据本文的实施例，形成掩模结构以保护读取元件和靠近读取元件的硬偏置层的第一部分。 然后执行去除处理以去除未被掩模结构保护的硬偏置层的第二部分，其限定小于初始划痕暴露区域的最终刮擦暴露区域。

公开(公告)号：US5604073A

公开(公告)日：1997-02-18

申请号：US453027

申请日：1995-05-30

申请人： Mohamad T. Krounbi ,  Alfred F. Renaldo ,  Douglas J. Werner

发明人： Mohamad T. Krounbi ,  Alfred F. Renaldo ,  Douglas J. Werner

IPC分类号： G03F7/085 ,  H05K3/14 ,  G03F7/00

CPC分类号： G03F7/085 ,  H05K3/143

摘要： In a bi-layer lift-off process, the adhesion characteristics of a PMGI release layer are substantially improved by the use of ortho-hydroxy substituted 4-phenylazo compounds (azo dyes), a class of nonactinic dyes, as an adhesion promoter additive. These azo dyes, due to their chemical structure, exhibit selective binding to various metals by acting as a chelating ligand to the metal surface. Formulations of a specific azo dye, Sudan Orange G, at concentrations from 0.25 to 1.0 percent (by weight) in PMGI exhibits no loss of adhesion at prebake temperature in the range of 120 to 160 degrees C.

摘要翻译： 在双层剥离过程中，通过使用邻羟基取代的4-苯基偶氮化合物（偶氮染料）作为一种非活性染料作为粘合促进剂添加剂，使PMGI释放层的粘合特性得到显着改善。 由于它们的化学结构，这些偶氮染料通过充当金属表面的螯合配体而显示出对各种金属的选择性结合。 PMGI浓度为0.25〜1.0％的特定偶氮染料，苏丹橙G的配方，在预烘温度为120〜160℃的范围内，没有粘附损失。

公开(公告)号：US5588199A

公开(公告)日：1996-12-31

申请号：US339523

申请日：1994-11-14

申请人： Mohamad T. Krounbi ,  Hin P. E. Lee ,  David J. Seagle

发明人： Mohamad T. Krounbi ,  Hin P. E. Lee ,  David J. Seagle

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/42

CPC分类号： G11B5/3903 ,  G11B5/3166 ,  Y10T29/49037 ,  Y10T29/49046 ,  Y10T29/49048

摘要： A method of lapping magnetoresistive (MR) heads individually which provides an MR element having a desired height with minimized skew is described. During fabrication of the MR head, one or more shunt resistors are formed between the edge of the MR element and the head air bearing surface. The shunt resistors are electrically connected at each end to extensions of the MR electrical leads and connected to the MR element and to each other at points between the ends forming a resistor network. During lapping of the MR head, the resistance of the resistor network is measured by an Ohmmeter connected between the MR element leads. As portions of the shunt resistors are ground away, the changes in the measured resistance of the resistor network are used to monitor and control any skew in the lapping process.

摘要翻译： 描述了单独研磨磁阻（MR）头的方法，其提供具有最小偏移的期望高度的MR元件。 在制造MR磁头时，在MR元件的边缘和头部空气轴承表面之间形成一个或多个分流电阻。 分流电阻器的每一端电连接到MR电引线的延伸部分并连接到MR元件，并且在形成电阻器网络的端部之间的点彼此连接。 在研磨MR头期间，电阻网络的电阻由连接在MR元件引线之间的欧姆表测量。 由于分流电阻器的部分被接地，电阻网络的测量电阻的变化用于监测和控制研磨过程中的任何偏斜。