Wafer process flow for a high performance MEMS accelerometer
    21.
    发明授权
    Wafer process flow for a high performance MEMS accelerometer 失效
    用于高性能MEMS加速度计的晶圆工艺流程

    公开(公告)号:US07736931B1

    公开(公告)日:2010-06-15

    申请号:US12506022

    申请日:2009-07-20

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01P15/0802 G01P15/02

    Abstract: A process for fabricating a pendulous accelerometer, including the steps of: providing a first substrate having a top planar surface, etching a portion of the first substrate to a first predetermined depth from the top planar surface to form a plurality of first protrusions, providing a second substrate, etching a portion of the second substrate to a second predetermined depth to form a plurality of second protrusions, bonding planar surfaces of the first protrusions to planar surfaces of the second protrusions, and etching a portion of the first substrate from an opposite side of the first substrate to a third predetermined depth equal to or greater than the difference between the total thickness of the first substrate and the first predetermined depth to form a freely rotatable sensing plate that includes a substantially hollow proof mass.

    Abstract translation: 一种用于制造下摆加速度计的方法,包括以下步骤:提供具有顶部平坦表面的第一基底,将第一基底的一部分从顶部平坦表面蚀刻到第一预定深度以形成多个第一突起,从而提供 第二基板,将第二基板的一部分蚀刻到第二预定深度以形成多个第二突起,将第一突起的平坦表面接合到第二突起的平面表面,以及从相对侧蚀刻第一基板的一部分 的第三预定深度等于或大于第一基板的总厚度与第一预定深度之间的差,以形成包括基本上中空的质量块的可自由旋转的检测板。

    Micro mirror arrays and microstructures with solderable connection sites
    22.
    发明授权
    Micro mirror arrays and microstructures with solderable connection sites 失效
    具有可焊接连接点的微镜阵列和微结构

    公开(公告)号:US07203394B2

    公开(公告)日:2007-04-10

    申请号:US10620119

    申请日:2003-07-15

    CPC classification number: B81C1/0023 B81B2201/042 G02B26/0841

    Abstract: A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.

    Abstract translation: 一种微镜阵列,包括具有位于其上的多个可移动反射表面的上晶片部分,上晶片部分在顶视图中限定覆盖区域。 该阵列还包括下部晶片部分,该下部晶片部分大致位于上部晶片部分下方并耦合到该上部晶片部分。 下晶片部分包括位于其上的至少一个连接部位,所述至少一个连接部位电连接或可操作地耦合到至少一个可控制至少一个反射表面的部件的部件。 至少一个连接位置通常不位于上晶片部分的覆盖区域内。

    Micro mirror structure with flat reflective coating
    23.
    发明授权
    Micro mirror structure with flat reflective coating 失效
    微镜结构,平面反光涂层

    公开(公告)号:US06778315B2

    公开(公告)日:2004-08-17

    申请号:US10254318

    申请日:2002-09-25

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about −600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构,包括多个可单独移动的反射镜。 每个反射镜在大约20摄氏度的温度下具有从顶部透视图的大致凹入的形状,并且在约85摄氏度的温度下从顶部的角度具有大致凸形的形状。 在一个实施例中,在大约20摄氏度的温度下,曲率半径可以大于约500mm,并且在约85摄氏度的温度下可以在约10微米的厚度下小于约-600mm。 在另一个实施例中,本发明是一种微镜结构,其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底,位于衬底上方的扩散阻挡层和位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    METHOD FOR MAKING A TRANSDUCER
    26.
    发明申请
    METHOD FOR MAKING A TRANSDUCER 有权
    制造传感器的方法

    公开(公告)号:US20090203163A1

    公开(公告)日:2009-08-13

    申请号:US12426310

    申请日:2009-04-20

    Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

    Abstract translation: 一种用于形成换能器的方法,包括提供绝缘体上半导体晶片的步骤,该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜,在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极,以及沉积或生长包括电连接部分的粘合层, 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤,所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起,从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器,其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

    Pendulous accelerometer with balanced gas damping
    28.
    发明申请
    Pendulous accelerometer with balanced gas damping 有权
    Pendulous加速度计具有均衡的气体阻尼

    公开(公告)号:US20090107238A1

    公开(公告)日:2009-04-30

    申请号:US11978090

    申请日:2007-10-26

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01P15/125 G01P15/0802 G01P15/131 G01P2015/0831

    Abstract: A pendulous capacitive accelerometer including a substrate having a substantially planar upper surface with an electrode section, and a sensing plate having a central anchor portion supported on the upper surface of the substrate to define a hinge axis. The sensing plate includes a solid proof mass on a first side of the central anchor portion and a substantially hollow proof mass on a second side of the central anchor portion, providing for reduced overall chip size and balanced gas damping. The solid proof mass has a first lower surface with a first electrode element thereon, and the substantially hollow proof mass has a second lower surface with a second electrode element thereon. Both the solid proof mass and the hollow proof mass have the same capacitive sensing area. The sensing plate rotates about the hinge axis relative to the upper surface of the substrate in response to an acceleration.

    Abstract translation: 一种下摆电容式加速度计,包括具有基本平坦的上表面的基板,具有电极部分,以及感测板,其具有支撑在基板的上表面上以限定铰链轴线的中心锚固部分。 感测板包括在中心锚固部分的第一侧上的固体质量块和在中心锚固部分的第二侧上的基本上中空的质量块,从而提供减小的整体芯片尺寸和平衡的气体阻尼。 固体质量体具有在其上具有第一电极元件的第一下表面,并且基本上中空的质量块具有在其上的第二电极元件的第二下表面。 固体质量块和中空质量块均具有相同的电容感应区域。 感测板响应于加速度相对于基板的上表面围绕铰链轴线旋转。

    Pressure sensor
    29.
    发明授权
    Pressure sensor 有权
    压力传感器

    公开(公告)号:US06928878B1

    公开(公告)日:2005-08-16

    申请号:US10952310

    申请日:2004-09-28

    Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

    Abstract translation: 一种压力传感器,包括被构造成当压力传感器暴露于其间的差压时移动的可移动部件以及位于可移动部件上的压力感测部件。 压力感测部件包括导电电子气体,其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件,并且压力感测部件可以经由引线输出信号,该信号与压力传感器暴露于的压力相关。

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