Abstract:
A process for fabricating a pendulous accelerometer, including the steps of: providing a first substrate having a top planar surface, etching a portion of the first substrate to a first predetermined depth from the top planar surface to form a plurality of first protrusions, providing a second substrate, etching a portion of the second substrate to a second predetermined depth to form a plurality of second protrusions, bonding planar surfaces of the first protrusions to planar surfaces of the second protrusions, and etching a portion of the first substrate from an opposite side of the first substrate to a third predetermined depth equal to or greater than the difference between the total thickness of the first substrate and the first predetermined depth to form a freely rotatable sensing plate that includes a substantially hollow proof mass.
Abstract:
A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.
Abstract:
A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about −600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.
Abstract:
A transducer for use in a harsh environment including a substrate and a transducer die directly coupled to the substrate by a bond frame positioned between the substrate and the transducer die. The transducer die includes a transducer element which provides an output signal related to a physical characteristic to be measured, or which receives an input signal and responsively provides a physical output. The transducer further includes a connecting component electrically coupled to the transducer element at a connection location that is fluidly isolated from the transducer element or the surrounding environment by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the transducer element by the same materials of the bond frame, and the connecting component is electrically isolated from the bond frame.
Abstract:
A transducer for use in a harsh environment including a substrate and a transducer die directly coupled to the substrate by a bond frame positioned between the substrate and the transducer die. The transducer die includes a transducer element which provides an output signal related to a physical characteristic to be measured, or which receives an input signal and responsively provides a physical output. The transducer further includes a connecting component electrically coupled to the transducer element at a connection location that is fluidly isolated from the transducer element or the surrounding environment by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the transducer element by the same materials of the bond frame, and the connecting component is electrically isolated from the bond frame.
Abstract:
A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.
Abstract:
A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.
Abstract:
A pendulous capacitive accelerometer including a substrate having a substantially planar upper surface with an electrode section, and a sensing plate having a central anchor portion supported on the upper surface of the substrate to define a hinge axis. The sensing plate includes a solid proof mass on a first side of the central anchor portion and a substantially hollow proof mass on a second side of the central anchor portion, providing for reduced overall chip size and balanced gas damping. The solid proof mass has a first lower surface with a first electrode element thereon, and the substantially hollow proof mass has a second lower surface with a second electrode element thereon. Both the solid proof mass and the hollow proof mass have the same capacitive sensing area. The sensing plate rotates about the hinge axis relative to the upper surface of the substrate in response to an acceleration.
Abstract:
A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.
Abstract:
A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer to form a piezoresistive film and etching the piezoresistive film to form at least one piezoresistor. The method also includes depositing or growing a metallization layer on the semiconductor-on-insulator wafer, the metallization layer including an electrical connection portion that is located on or is electrically coupled to the piezoresistor. The method includes removing at least part of the second semiconductor layer to form a diaphragm, with the at least part of the piezoresistor being located on the diaphragm, and joining the wafer to a package by melting a high temperature braze material or a glass frit material.