摘要:
In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要:
Image sensing radiation detection pixels of m (columns)×n (rows) are divided into, e.g., 72 pixel regions. Image sensing radiation detection pixels belonging to one pixel region are connected to the same read TCP and driving TCP. For example, three regions (AEC radiation detection regions) of the 72 pixel regions have a plurality of AEC radiation detection pixels. An AEC radiation detection pixel has a TFT sensor. Spare wiring lines for the AEC radiation detection pixels are arranged at two side portions of each read TCP. Each spare wiring line is connected to a predetermined circuit in a read device to connect the AEC radiation detection pixels to the predetermined circuit so that the AEC circuit is operated.
摘要:
An RF air coil transponder includes a rotatable carrier, such as a rigid reel. A coil is wound about the reel and at least one field influencing body for influencing the electric and/or the magnetic field within the coil is supported by the reel. The rigidity of the reel enables the coil to keep its form and guarantees precise distances between windings, especially when a winding machine forms the coil. Adjusting the angular position, shape, composition, size, and/or surface are of the body effects adjustment of the resonant frequency.
摘要:
In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要:
Provided are an imaging apparatus and a radiation detecting apparatus comprising a photoelectric conversion layer for converting an incident light into a charge, an electrode layer formed on the photoelectric conversion layer, first and second protective layers formed on the electrode layer, and a transparent electrode disposed between the electrode layer and the first protective layer, wherein a relation of nc1−nc2≦1.5 is met, where nc1 and nc2 are respectively refractive indices of the first and second protective layers.
摘要翻译:提供了一种成像装置和放射线检测装置,其包括用于将入射光转换成电荷的光电转换层,形成在光电转换层上的电极层,形成在电极层上的第一和第二保护层,以及布置的透明电极 在所述电极层和所述第一保护层之间,其中满足n C 1 -n C 2 <= 1.5的关系,其中n C 1和 n2c2分别是第一和第二保护层的折射率。
摘要:
A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nci−nc2≦1.5, thereby providing a high sensitivity of detecting the radiation.
摘要:
A radiation image pickup apparatus includes a base, at least one image pickup element, a scintillator, a first heat peelable adhesive layer which is arranged between the base and the image pickup element and which fixes the base and the image pickup element, and a second heat peelable adhesive layer which is arranged between the image pickup element and the scintillator and which fixes the image pickup element and the scintillator, and in the radiation image pickup element described above, the first heat peelable adhesive layer contains first heat-expandable microspheres, the second heat peelable adhesive layer contains second heat-expandable microspheres, and the first heat-expandable microspheres have a different expansion starting temperature from that of the second heat-expandable microspheres.
摘要:
A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.
摘要:
A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode.
摘要:
A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca≧∈0×∈×S/d and 7d≦P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ∈ is a relative dielectric constant of the interlayer insulation film, and ∈0 is a vacuum dielectric constant.
摘要翻译:辐射检测装置包括多个像素,每个像素包括将入射辐射转换为电荷的转换元件,传送电荷的开关元件和设置在转换元件和开关元件之间的层间绝缘膜,驱动栅极线 所述开关元件和与所述栅极线相交并且被配置为读出从所述开关元件传递的电荷的信号线,其中,Ca≥∈0×∈×S / d和7d&nlE; P / 2,其中P 是像素间距,Ca是信号线和栅极线之间的耦合电容的总和,S是信号线和转换元件的重叠面积,d是层间绝缘膜的厚度,ε是相对的 层间绝缘膜的介电常数,∈0为真空介电常数。