Method and apparatus for detecting defects
    24.
    发明授权
    Method and apparatus for detecting defects 失效
    检测缺陷的方法和装置

    公开(公告)号:US07643139B2

    公开(公告)日:2010-01-05

    申请号:US11206209

    申请日:2005-08-18

    CPC classification number: G01N21/9505 G01N21/47 G01N21/94 G01N21/9501

    Abstract: An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.

    Abstract translation: 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。

    Defect detector and defect detecting method
    27.
    发明授权
    Defect detector and defect detecting method 有权
    缺陷检测器和缺陷检测方法

    公开(公告)号:US07417721B2

    公开(公告)日:2008-08-26

    申请号:US10536715

    申请日:2003-11-27

    CPC classification number: G01N21/00 G01N21/9501 G06T7/0004 G06T2207/30148

    Abstract: A defects inspecting apparatus having: a scanning stage for running into a predetermined direction while mounting an inspection target substrate thereon; an illumination optic system for irradiating an illumination light beam upon a surface of the inspection target substrate at a predetermined angle inclined thereto; a detection optic system including, an upper-directed photo-detector for receiving upper-directed reflected/scattered lights emitting upwards from the inspection target substrate, thereby converting them into an upper-directed image signal, and a side-directed photo-detector for receiving side-directed reflected/scattered lights emitting for the inspection target substrate into an inclined direction, so as to flatly intersects the illumination light beam, and thereby converting into a side-directed image signal; and a signal processing system-for detecting defects upon basis of the upper-directed image signal and the side-directed image signal.

    Abstract translation: 一种缺陷检查装置,具有:在其上安装检查对象基板的同时沿预定方向行进的扫描台; 照明光学系统,用于以与其倾斜的预定角度将照明光束照射在检查对象基板的表面上; 检测光学系统,包括:用于接收从检查对象基板向上发射的上方反射/散射光的上位光检测器,从而将其转换为高定向图像信号;以及侧向光检测器, 将检测对象基板发射的侧向反射/散射光倾斜到倾斜方向,以与照明光束平坦地相交,从而转换为侧向图像信号; 以及信号处理系统 - 用于基于上限图像信号和侧向图像信号来检测缺陷。

    Method and apparatus for detecting defects
    30.
    发明申请
    Method and apparatus for detecting defects 失效
    检测缺陷的方法和装置

    公开(公告)号:US20060068512A1

    公开(公告)日:2006-03-30

    申请号:US11206209

    申请日:2005-08-18

    CPC classification number: G01N21/9505 G01N21/47 G01N21/94 G01N21/9501

    Abstract: An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.

    Abstract translation: 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。

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