公开(公告)号：US20070148953A1

公开(公告)日：2007-06-28

申请号：US11455920

申请日：2006-06-20

申请人： Tsukasa Itani ,  Makoto Sasaki ,  Yukio Takigawa

发明人： Tsukasa Itani ,  Makoto Sasaki ,  Yukio Takigawa

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877 ,  G11B5/3163 ,  H01L21/02074 ,  H01L21/321 ,  H01L21/76886

摘要： The method comprises the step of forming an interconnection trench 38 in an inter-layer insulation film 34, the step of forming an interconnection layer 44 of Cu as the main material in the interconnection trench 38, and the step of performing nitrogen-two-fluid processing of concurrently spraying pure water with ammonia and hydrogen solved in and nitrogen gas on the surface of the interconnection layer 44 buried in the interconnection trench 38.

摘要翻译： 该方法包括在层间绝缘膜34中形成互连沟槽38的步骤，在互连沟槽38中形成Cu作为主要材料的互连层44的步骤，以及执行氮二流体 处理同时喷洒氨和氢溶解的纯净水和氮气在埋入互连沟槽38中的互连层44的表面上。

公开(公告)号：US06943115B2

公开(公告)日：2005-09-13

申请号：US10326883

申请日：2002-12-23

申请人： Hiroshi Horiuchi ,  Tamotsu Yamamoto ,  Yukio Takigawa ,  Shigeru Suzuki ,  Nobuaki Santo ,  Motoshu Miyajima

发明人： Hiroshi Horiuchi ,  Tamotsu Yamamoto ,  Yukio Takigawa ,  Shigeru Suzuki ,  Nobuaki Santo ,  Motoshu Miyajima

IPC分类号： H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/76838 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for manufacturing a semiconductor device having a multilayer wiring structure in which at least one insulating film is formed with a set of conducting portions which are electrically connected to each other to have a surface area of no less than 500 μm2 and which include a wiring having a width of no more than 1.0 μm. The method includes a polishing step for flattening the conducting portions together with the insulating film by chemical mechanical polishing, a chemical cleaning step for cleaning the flattened surface of the insulating film with a cleaning liquid, and a rising step for removing the cleaning liquid using a rinsing liquid. The rinsing step is performed using water with a dissolved oxygen concentration decreased to no more than 6 ppm by weight as the rinsing liquid.

摘要翻译： 提供一种用于制造具有多层布线结构的半导体器件的方法，其中至少一个绝缘膜形成有一组导电部分，它们彼此电连接以具有不小于500μm的表面积， 2＆lt;其中包括宽度不大于1.0μm的布线。 该方法包括：通过化学机械抛光使绝缘膜与导电部分一起平坦化的抛光步骤，用清洁液清洁绝缘膜的平坦化表面的化学清洁步骤，以及使用 冲洗液体。 冲洗步骤使用溶解氧浓度降低至不超过6重量ppm的水作为冲洗液体进行。

公开(公告)号：US20050136661A1

公开(公告)日：2005-06-23

申请号：US10816958

申请日：2004-04-05

申请人： Yukio Takigawa ,  Tamotsu Yamamoto ,  Yoshiyuki Okura ,  Takahiro Kono ,  Tsutomu Hosoda

发明人： Yukio Takigawa ,  Tamotsu Yamamoto ,  Yoshiyuki Okura ,  Takahiro Kono ,  Tsutomu Hosoda

IPC分类号： H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/7684 ,  H01L21/76838

摘要： A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在层间绝缘膜34中形成互连槽38; 在互连槽38中形成作为主要材料的Cu的互连层44; 同时将氮气和水注入埋在互连槽38中的互连层44的表面。

公开(公告)号：US06693046B2

公开(公告)日：2004-02-17

申请号：US10410247

申请日：2003-04-10

申请人： Yukio Takigawa ,  Shun-ichi Fukuyama

发明人： Yukio Takigawa ,  Shun-ichi Fukuyama

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02304 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/314 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielectric constant insulating layer having a specific dielectric constant lower than the specific dielectric constant of silicon oxide on the first hydrophobic insulating layer having a bydrophilized surface. A semiconductor device manufacturing method which can suppress peel-off of a low dielectric constant insulating layer from an underlying hydrophobic layer is provided.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（X）在半导体衬底上形成第一疏水绝缘层; （Y）使所述第一疏水性绝缘层的表面亲水化; 和（Z）形成低介电常数比低介电常数低的介电常数绝缘层，该介电常数比第二疏水绝缘层上的氧化硅的比介电常数低。 提供了可以抑制低介电常数绝缘层从下面的疏水层剥离的半导体器件制造方法。

公开(公告)号：US06656996B2

公开(公告)日：2003-12-02

申请号：US09572007

申请日：2000-05-16

申请人： Yasuaki Tsutsumi ,  Tetsuya Mieda ,  Masayuki Tanaka ,  Toshimi Kawahara ,  Yukio Takigawa

发明人： Yasuaki Tsutsumi ,  Tetsuya Mieda ,  Masayuki Tanaka ,  Toshimi Kawahara ,  Yukio Takigawa

IPC分类号： C08K336

CPC分类号： C08K3/36 ,  H01L2224/11 ,  C08L63/00

摘要： Resin composition for sealing semiconductor devices, which contains a filler (A) of spherical fused silica having maximum particle size of not larger than 45 &mgr;m and may contain metal impurities having a particle size of not larger than 53 &mgr;m; and a semiconductor device sealed with the resin composition.

摘要翻译： 用于密封半导体器件的树脂组合物，其包含最大粒度不大于45μm的球形熔融二氧化硅的填料（A），并且可以含有粒径不大于53μm的金属杂质; 以及用树脂组合物密封的半导体器件。

公开(公告)号：US06361879B1

公开(公告)日：2002-03-26

申请号：US09381765

申请日：1999-09-23

申请人： Yasuaki Tsutsumi ,  Masayuki Tanaka ,  Toshimi Kawahara ,  Yukio Takigawa

发明人： Yasuaki Tsutsumi ,  Masayuki Tanaka ,  Toshimi Kawahara ,  Yukio Takigawa

IPC分类号： H01L2912

CPC分类号： H01L23/3114 ,  C08L63/00 ,  H01L23/293 ,  H01L23/3107 ,  H01L2224/274 ,  H01L2924/01019 ,  H01L2924/3511 ,  Y10T428/12528 ,  C08L61/04

摘要： A sealed semiconductor chip having a surface film of a sealed resin composition, wherein the resin composition has a linear expansion coefficient of 60×10−6/K or less at a temperature equal to or less than its glass transition point and 140×10−6/K or less at a temperature equal to or higher than its glass transition point; a semiconductor-sealing resin composition for sealing a semiconductor chip, which has a linear expansion coefficient of 60×10−6/K or less at a temperature equal to or less than its glass transition point and 140×10−6/K or less at a temperature equal to or higher than its glass transition point; the sealed semiconductor chip is chip size and has high reliability; the semiconductor-sealing resin composition creates a good seal on chip wafers and has high reliability; and the chip wafers sealed with a surface film of the resin composition warp little.

摘要翻译： 一种具有密封树脂组合物的表面膜的密封半导体芯片，其中，在等于或小于其玻璃化转变点和140×10 -6 / K的温度下，树脂组合物的线性膨胀系数为60×10 -6 / K以下，或者 在等于或高于其玻璃化转变点的温度下较少; 用于密封半导体芯片的半导体密封树脂组合物，其在等于或小于其玻璃化转变点的温度下为线性膨胀系数为60×10 -6 / K或更小，在等于或等于140×10 -6 / K 达到或高于其玻璃化转变点; 密封半导体芯片芯片尺寸大，可靠性高; 半导体密封树脂组合物在芯片晶片上形成良好的密封并具有高可靠性; 并且用树脂组合物的表面膜密封的芯片晶片变小。

公开(公告)号：US06278192B1

公开(公告)日：2001-08-21

申请号：US09354734

申请日：1999-07-16

申请人： Yukio Takigawa ,  Ei Yano

发明人： Yukio Takigawa ,  Ei Yano

IPC分类号： H01L2150

CPC分类号： H01L23/293 ,  H01L2224/13023 ,  H01L2224/274 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device having enhanced reliability which is obtained by cutting a wafer encapsulated by an encapsulating material layer in such a manner that each of end faces of bumps for an external terminal is exposed, and a method of isolating a metal in an encapsulating material to allow measuring. The semiconductor device comprises a semiconductor element, bumps formed on a surface thereof for external terminals, and an encapsulating material layer, the encapsulating material layer being formed of an encapsulating material containing greater than 70% by weight and not greater than 90% by weight of fused silica, based on the total weight of the encapsulating material. The metal in the encapsulating material comprising a resin component and a fumed silica filler is isolated for measuring by adding the encapsulating material to a solvent capable of dissolving the resin component, separating solvent-insolubles from the solution in which the resin component has been dissolved, introducing the insolubles into a liquid having a specific gravity of 2.5 to 5.5 to disperse the insolubles, and then recovering the precipitate.

摘要翻译： 一种具有增强的可靠性的半导体器件，其通过以这样一种方式切割由封装材料层封装的晶片而获得的，即外露端子的凸块的每个端面被暴露，以及隔离封装材料中的金属以允许 测量。 半导体器件包括半导体元件，在其外部端子的表面上形成的凸块和封装材料层，所述封装材料层由包含大于70重量％且不大于90重量％ 熔融二氧化硅，基于包封材料的总重量。 通过将包封材料添加到能够溶解树脂成分的溶剂中，将溶剂不溶物从溶解有树脂成分的溶液中分离出来，分离包含树脂组分和热解法二氧化硅填料的包封材料中的金属， 将不溶物引入比重为2.5〜5.5的液体中以分散不溶物，然后回收沉淀物。