公开(公告)号：US20240045319A1

公开(公告)日：2024-02-08

申请号：US18380956

申请日：2023-10-17

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hirotomo Kawahara ,  Toshiyuki Uno ,  Ichiro Ishikawa ,  Kenichi Sakaki

IPC: G03F1/24 ,  H01L21/033 ,  G03F1/32

CPC classification number: G03F1/24 ,  H01L21/0337 ,  H01L21/0332 ,  G03F1/32

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

公开(公告)号：US20230350285A1

公开(公告)日：2023-11-02

申请号：US18346563

申请日：2023-07-03

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Shunya TAKI ,  Takuma KATO ,  Ichiro ISHIKAWA ,  Kenichi SASAKI

IPC: G03F1/24 ,  G03F1/32 ,  G03F1/80 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/32 ,  G03F1/80 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

公开(公告)号：US20220299862A1

公开(公告)日：2022-09-22

申请号：US17835742

申请日：2022-06-08

Applicant: AGC Inc.

Inventor： Daijiro AKAGI ,  Hirotomo KAWAHARA ,  Hiroyoshi TANABE ,  Toshiyuki UNO

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/52 ,  G03F1/80

Abstract: A reflective mask blank for EUV lithography includes, in the following order, a substrate, a multilayer reflective film for reflecting EUV light, a phase shift film for shifting a phase of EUV light, and an etching mask film. The phase shift film is constituted of a ruthenium-based material containing ruthenium as a main component. The phase shift film has a film thickness of 20 nm or larger. The etching mask film is removable with a cleaning liquid comprising an acid or a base.