Mitigating reliability degradation of analog memory cells during long static and erased state retention
    21.
    发明授权
    Mitigating reliability degradation of analog memory cells during long static and erased state retention 有权
    在长静态和擦除状态保持期间,减轻模拟存储单元的可靠性降级

    公开(公告)号:US09236132B2

    公开(公告)日:2016-01-12

    申请号:US14249448

    申请日:2014-04-10

    Applicant: Apple Inc.

    Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

    Abstract translation: 一种非易失性存储器中的方法,其包括使用包括擦除级别的预定义编程级别集存储数据的多个存储器单元,包括接收指示要保留的一组存储器单元的存储操作,而不进行编程 长时间 组中的存储单元设置为与擦除级别不同的保留编程级别。 在准备使用数据对存储器单元组进行编程时,存储器单元组被擦除到擦除的电平,然后将数据编程在存储器单元组中。

    MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION
    23.
    发明申请
    MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION 有权
    在长期静态和擦除状态下,减轻模拟记忆细胞的可靠性降低

    公开(公告)号:US20140355347A1

    公开(公告)日:2014-12-04

    申请号:US14249448

    申请日:2014-04-10

    Applicant: Apple Inc.

    Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

    Abstract translation: 一种非易失性存储器中的方法,其包括使用包括擦除级别的预定义编程级别集存储数据的多个存储器单元,包括接收指示要保留的一组存储器单元的存储操作,而不进行编程 长时间 组中的存储单元设置为与擦除级别不同的保留编程级别。 在准备使用数据对存储器单元组进行编程时,存储器单元组被擦除到擦除的电平,然后将数据编程在存储器单元组中。

    REDUNDANCY SCHEMES FOR NON-VOLATILE MEMORY USING PARITY ZONES HAVING NEW AND OLD PARITY BLOCKS
    25.
    发明申请
    REDUNDANCY SCHEMES FOR NON-VOLATILE MEMORY USING PARITY ZONES HAVING NEW AND OLD PARITY BLOCKS 有权
    使用具有新的和旧的奇偶性块的奇异性区域的非易失性存储器的冗余方案

    公开(公告)号:US20140129874A1

    公开(公告)日:2014-05-08

    申请号:US13670604

    申请日:2012-11-07

    Applicant: APPLE INC.

    CPC classification number: G06F11/108

    Abstract: A method includes, in a non-volatile memory that includes multiple memory blocks, defining a redundancy zone that includes at least an old parity block, a new parity block and multiple active blocks of which one block is defined as an open block. Data is stored in the redundancy zone and the stored data is protected, such that new input data is stored in the open block, redundancy information for the active blocks including the open block is stored in the new parity block, and the redundancy information for the active blocks excluding the open block is stored in the old parity block. Upon filling the open block and the new parity block, an alternative block is assigned to serve as the open block and the new parity block is assigned to serve as the old parity block.

    Abstract translation: 一种方法包括在包括多个存储器块的非易失性存储器中,定义包括至少一个旧奇偶校验块,新奇偶校验块和多个活动块的冗余区,其中一个块被定义为开放块。 将数据存储在冗余区域中,并且存储的数据被保护,使得新的输入数据被存储在开放块中,用于包括打开块的活动块的冗余信息被存储在新的奇偶校验块中,并且冗余信息用于 不包括打开块的活动块存储在旧的奇偶校验块中。 在填充开放块和新的奇偶校验块时,分配替代块用作开放块,并且新的奇偶校验块被分配用作旧的奇偶校验块。

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