Abstract:
A display may have a thin-film transistor (TFT) layer and color filter layer. Light blocking structures in an inactive area of the display may prevent stray backlight from leaking out of the display. The thin-film transistor layer may have a first substrate, a first black masking layer, a planarization layer, and a layer of TFT circuitry on the planarization layer. The color filter layer may have a second substrate and a second black masking layer on the second substrate. Light-cured sealant may be formed between the TFT layer and the color filter layer. Gaps may be formed in the second black masking layer to allow light to cure the sealant. At least a portion of the TFT circuitry may serve to block stray backlight penetrating through the gaps in the second black masking layer during normal operation of the display.
Abstract:
A display may have a liquid crystal layer sandwiched between a thin-film transistor layer and a color filter layer. An upper polarizer may be placed on top of the thin-film transistor layer. A lower polarizer may be placed under the color filter layer. Components may be bonded to bond pads on the inner surface of the thin-film transistor layer using anisotropic conductive film. Bond quality may be assessed by probing probe pads that are coupled to the bond pads or by visually inspecting the bond pads through the thin-film transistor layer. Opaque masking material in the inactive area may be provided with openings to accommodate the bond pads. Additional opaque masking material may be placed on the underside of the upper polarizer and on the upper surface of the thin-film transistor layer to block the openings from view following visual inspection.
Abstract:
A display may have an array of display pixels. The array may have rows. Each row of the display pixels may receive gate lines signals on a respective gate line. Gate driver circuitry may be used to drive gate line signals onto the gate lines. Each gate line may be coupled to a logic gate in the gate driver circuitry. The logic gates may each be coupled to a respective latch. A termination block in the gate driver circuitry may have a termination block latch and a termination block logic gate. Signal lines may be used to distribute clock signals from display driver circuitry to the logic gates. Respective signal lines may also be used to distribute a pixel charging initiation signal to a latch in the first row of the array and a pixel charging termination signal to the termination block latch.
Abstract:
An electronic device may have a display such as a liquid crystal display. The display may have a color filter layer and a thin-film transistor (TFT) layer. An active portion of the display may contain an array of display pixels that are controlled by control signals that are provided over intersecting gate lines and data lines. In an inactive portion of the display, display driver circuitry may be used to provide data signals for the data lines. Each display pixel may be coupled to a corresponding gate line, data line, and may share a common electrode. Changes in the data signals may be coupled onto the common electrode to cause voltage rippling. Compensation circuitry may be coupled to the common electrode via an AC or a DC coupling connection to help reduce the voltage rippling.
Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Abstract:
A touch screen. In some examples, the touch screen can comprise a first element coupled to a first sense connection, and a second element coupled to a second sense connection. In some examples, the first and second sense connections can be configured such that a load presented by the first sense connection and the first element is substantially equal to a load presented by the second sense connection and the second element. In some examples, the first and second sense connections can comprise detour routing configured such that a resistance of the first sense connection is substantially equal to a resistance of the second sense connection. In some examples, the first and second sense connections can be coupled to dummy routing configured such that a first capacitance presented by the first sense connection is substantially equal to a second capacitance presented by the second sense connection.
Abstract:
A system and device for driving high resolution monitors while reducing artifacts thereon. Utilization of Z-inversion polarity driving techniques to drive pixels in a display reduces power consumption of the display but tends to generate visible horizontal line artifacts caused by capacitances present between the pixels and data lines of the display. By introducing a physical shield between the pixel and data line elements, capacitance therebetween can be reduced, thus eliminating the cause of the horizontal line artifacts. The shield may be a common voltage line (Vcom) of the display.
Abstract:
A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.
Abstract:
A display may have an array of pixels controlled by display driver circuitry. The pixels may have pixel circuits. In liquid crystal display configurations, each pixel circuit may have an electrode that applies electric fields to an associated portion of a liquid crystal layer. In organic light-emitting diode displays, each pixel circuit may have a drive transistor that applies current to an organic light-emitting diode in the pixel circuit. The pixel circuits and display driver circuitry may have thin-film transistor circuitry that includes transistor such as silicon transistors and semiconducting-oxide transistors. Semiconducting-oxide transistors and silicon transistors may be formed on a common substrate. Semiconducting-oxide transistors may have polysilicon layers with doped regions that serve as gates. Semiconducting-oxide channel regions overlap the gates. Transparent conductive oxide and metal may be used to form source-drain terminals that are coupled to opposing edges of the semiconducting oxide channel regions.