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    VCSEL STRUCTURE WITH EMBEDDED HEAT SINK
    23.
    发明申请
    VCSEL STRUCTURE WITH EMBEDDED HEAT SINK 有权
    VCSEL结构与嵌入式散热器

    公开(公告)号：US20170025815A1

    公开(公告)日：2017-01-26

    申请号：US15011562

    申请日：2016-01-31

    Applicant: APPLE INC.

    Inventor： Tongbi T. Jiang ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/024 ,  H01S5/42 ,  H01S5/042 ,  H01S5/183

    CPC classification number: H01S5/02469 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/423

    Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

    Abstract translation: 光电子器件包括半导体衬底，其具有正面和背面，并且具有至少一个从背面穿过半导体衬底延伸到与前侧接近的腔。 至少一个光电子发射器形成在半导体衬底的与该至少一个腔相邻的正面上。 导热材料至少部分地填充至少一个空腔，并被配置为用作至少一个光电发射器的散热器。

    Creating arbitrary patterns on a 2-d uniform grid VCSEL array
    24.
    发明授权
    Creating arbitrary patterns on a 2-d uniform grid VCSEL array 有权

    公开(公告)号：US10951008B2

    公开(公告)日：2021-03-16

    申请号：US16867594

    申请日：2020-05-06

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/183 ,  H01L29/15 ,  H01S5/026 ,  H01S5/187 ,  H01S5/42 ,  H01S5/042 ,  H01S5/20

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    Wafer-Level High Aspect Ratio Beam Shaping
    25.
    发明申请
    Wafer-Level High Aspect Ratio Beam Shaping 审中-公开

    公开(公告)号：US20190369405A1

    公开(公告)日：2019-12-05

    申请号：US16399937

    申请日：2019-04-30

    Applicant: Apple Inc.

    Inventor： Tong Chen ,  Wenrui Cai ,  Albert P. Heberle ,  Weiping Li

    IPC: G02B27/09 ,  F21V5/00 ,  F21V5/04

    Abstract: A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.

    Creating arbitrary patterns on a 2-D uniform grid VCSEL array
    26.
    发明申请
    Creating arbitrary patterns on a 2-D uniform grid VCSEL array 审中-公开

    公开(公告)号：US20190356112A1

    公开(公告)日：2019-11-21

    申请号：US16524313

    申请日：2019-07-29

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42 ,  H01S5/026 ,  H01S5/187 ,  H01L29/15

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    Creating arbitrary patterns on a 2-D uniform grid VCSEL array
    27.
    发明授权
    Creating arbitrary patterns on a 2-D uniform grid VCSEL array 有权

    公开(公告)号：US10411437B2

    公开(公告)日：2019-09-10

    申请号：US16180041

    申请日：2018-11-05

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/183 ,  H01L29/15 ,  H01S5/026 ,  H01S5/187 ,  H01S5/42 ,  H01S5/042 ,  H01S5/20

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    Top-emission VCSEL-array with integrated diffuser
    28.
    发明申请
    Top-emission VCSEL-array with integrated diffuser 审中-公开

    公开(公告)号：US20190017678A1

    公开(公告)日：2019-01-17

    申请号：US16055104

    申请日：2018-08-05

    Applicant: APPLE INC.

    Inventor： Neil MacKinnon ,  Weiping Li ,  Xiaofeng Fan

    IPC: F21V3/04 ,  H01S5/183 ,  H01S5/00

    Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

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