公开(公告)号：US20220028702A1

公开(公告)日：2022-01-27

申请号：US17498129

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhang Kang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/67 ,  H01L23/00 ,  H01L21/768 ,  H01L21/322 ,  H01L21/50 ,  H01L21/02 ,  H01L21/60

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US10950475B1

公开(公告)日：2021-03-16

申请号：US16545537

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Cheng-Hsiung Tsai ,  Yueh Sheng Ow ,  Preetham P. Rao ,  Ribhu Gautam ,  Prashant Agarwal

IPC: H01L21/67 ,  H01L21/324 ,  H05B6/64 ,  H01L21/66 ,  G01J5/10

Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

公开(公告)号：US10600664B2

公开(公告)日：2020-03-24

申请号：US15585842

申请日：2017-05-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham Rao ,  Ananthkrishna Jupudi

IPC: H01L21/67 ,  G01K11/32 ,  H01L21/687 ,  H01L21/66 ,  G01K11/20 ,  H01L23/00 ,  H01L23/31

Abstract: Methods and apparatus for measuring the temperature of epoxy resin in an electronics package are provided herein. In some embodiments, apparatus for encapsulating an electronics package includes: a process chamber having a chamber body enclosing a processing volume; a substrate support having a support surface for receiving and supporting a substrate for forming an electronics package; and a temperature sensor to measure a temperature of an epoxy resin in an electronics package. The temperature sensor includes: an input apparatus including at least a light source disposed outside the chamber body to provide an excitation light energy to a portion of the epoxy resin; and an output apparatus including at least a signal analyzer disposed outside the chamber body to detect fluorescent light energy emitted by the portion of the epoxy resin and determine a temperature of the epoxy resin based on the excitation light energy and the fluorescent light energy.

公开(公告)号：US20160189941A1

公开(公告)日：2016-06-30

申请号：US14587967

申请日：2014-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Junqi Wei ,  Zhitao Cao ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Kirankumar Savandaiah ,  Xin Wang ,  Sriskantharajah Thirunavukarasu

IPC: H01J37/34 ,  H01J37/32 ,  B22F3/12

CPC classification number: H01J37/3429 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0458 ,  C22C14/00 ,  C22C27/04 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/10 ,  B22F2003/247 ,  B22F2202/13

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

Abstract translation: 本公开的实施例包括用于控制钛 - 钨（TiW）靶结节形成的方法和装置。 在一些实施方案中，靶包括：主要由钛粉末和钨粉末的混合物形成的钛（Ti）和钨（W）的源材料，其中主要量的钛粉末的晶粒尺寸小于或等于 等于主要量的钨粉的粒度。

公开(公告)号：USD973609S1

公开(公告)日：2022-12-27

申请号：US29732229

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Designer： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Tai Ming Boh ,  Kang Zhang ,  Yuichi Wada

公开(公告)号：US11476097B2

公开(公告)日：2022-10-18

申请号：US17012275

申请日：2020-09-04

Applicant: Applied Materials, Inc.

Inventor： Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/683 ,  H01J37/32 ,  H02N13/00

Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

公开(公告)号：US11362404B2

公开(公告)日：2022-06-14

申请号：US17084804

申请日：2020-10-30

Applicant: Applied Materials, Inc.

Inventor： Rajesh Kumar Putti ,  Prashant Agarwal ,  Ananthkrishna Jupudi

IPC: H01P1/08 ,  H01P1/04

Abstract: Apparatus for transmitting microwaves into a process chamber using a microwave pressure window assembly. The microwave pressure window assembly may include a first plate with a first aperture surrounded by a first recess for a first pressure seal, a second plate with a second aperture surrounded by a second recess for a second pressure seal, a dielectric plate configured to transmit microwaves and interposed between the first plate and the second plate and between the first pressure seal and the second pressure seal. The apertures include a first vertical step area on a first vertical side of the apertures and a second vertical step area on a second vertical side of the apertures opposite of the first vertical side. The first vertical step areas and the second vertical step areas may have a thickness of approximately 50% of a thickness of the plates that includes a dielectric plate recess.

公开(公告)号：US11289357B2

公开(公告)日：2022-03-29

申请号：US16550521

申请日：2019-08-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi Wada ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Clinton Goh ,  Kai Liang Liew ,  Sarath Babu

IPC: H01L21/683

Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately −50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

公开(公告)号：US11171017B2

公开(公告)日：2021-11-09

申请号：US17010961

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Zhang Kang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/322 ,  H01L21/02 ,  H01L23/00 ,  H01L21/768 ,  H01L21/67 ,  H01L21/50 ,  H01L21/60

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US11043406B2

公开(公告)日：2021-06-22

申请号：US16383772

申请日：2019-04-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Cheng-Hsiung Tsai ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: C23C14/50 ,  H01L21/687 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

Abstract: Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.