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公开(公告)号:US11870202B2
公开(公告)日:2024-01-09
申请号:US17009851
申请日:2020-09-02
发明人: Rajesh Kumar Putti , Vinodh Ramachandran , Ananthkrishna Jupudi , Lean Wui Koh , Prashant Agarwal
CPC分类号: H01S3/041 , H01S3/042 , H01S3/06779 , H01S3/06783 , H01S3/2308
摘要: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.
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公开(公告)号:US11630001B2
公开(公告)日:2023-04-18
申请号:US17073733
申请日:2020-10-19
发明人: Ananthkrishna Jupudi , Sai Kumar Kodumuri , Vinodh Ramachandran , Prashant Agarwal , Hadi Bin Amir Muhammad
摘要: An apparatus for determining temperatures of substrates in microwave and/or vacuum environments. A substrate holder with a plurality of support pins includes a temperature sensor assembly with at least a portion of a surface with a phosphorous coating is configured to be inserted in at least one pin support position from an inner area of the substrate holder and in at least one pin support position from an outer area of the substrate holder. The temperature sensor assembly includes a temperature sensor pin with a spring that is microwave transparent. The temperature sensor pin is made of a material with a thermal conductivity greater than approximately 200 W/mK and a low thermal mass which is microwave transparent. An optical transmission assembly is embedded into at least a portion of the substrate holder to receive light emissions from a surface of the temperature sensor pin.
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公开(公告)号:US12110585B2
公开(公告)日:2024-10-08
申请号:US17167469
申请日:2021-02-04
发明人: Naman Apurva , Lara A. Hawrylchak , Mahesh Ramakrishna , Sriharish Srinivasan , Prashant Agarwal
IPC分类号: C23C16/44 , C23C16/455 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号: C23C16/4412 , C23C16/45517 , C23C16/45591 , C23C16/4585 , C23C16/45565 , H01J37/3244 , H01J37/32633 , H01J37/32834 , H01L21/67069
摘要: Embodiments of exhaust liner systems are provided herein. In some embodiments, an exhaust liner system for use in a process chamber includes a lower exhaust liner having an annular body with a central opening; an upper flange, a central flange, and a lower flange extending outward from the annular body, wherein the lower flange and the central flange partially define a first plenum, and wherein the central flange and the upper flange partially define a second plenum; a plurality of exhaust holes from the central opening to the first plenum; and at least one cutout in the central flange to provide a flow path from the first plenum to the second plenum, wherein the lower exhaust liner defines a gas flow path from the central opening to the first plenum via the plurality of exhaust holes and from the first plenum to the second plenum via the least one cutout.
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公开(公告)号:US11362404B2
公开(公告)日:2022-06-14
申请号:US17084804
申请日:2020-10-30
摘要: Apparatus for transmitting microwaves into a process chamber using a microwave pressure window assembly. The microwave pressure window assembly may include a first plate with a first aperture surrounded by a first recess for a first pressure seal, a second plate with a second aperture surrounded by a second recess for a second pressure seal, a dielectric plate configured to transmit microwaves and interposed between the first plate and the second plate and between the first pressure seal and the second pressure seal. The apertures include a first vertical step area on a first vertical side of the apertures and a second vertical step area on a second vertical side of the apertures opposite of the first vertical side. The first vertical step areas and the second vertical step areas may have a thickness of approximately 50% of a thickness of the plates that includes a dielectric plate recess.
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公开(公告)号:USD967081S1
公开(公告)日:2022-10-18
申请号:US29756723
申请日:2020-10-30
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6.
公开(公告)号:US10950475B1
公开(公告)日:2021-03-16
申请号:US16545537
申请日:2019-08-20
发明人: Vinodh Ramachandran , Ananthkrishna Jupudi , Cheng-Hsiung Tsai , Yueh Sheng Ow , Preetham P. Rao , Ribhu Gautam , Prashant Agarwal
IPC分类号: H01L21/67 , H01L21/324 , H05B6/64 , H01L21/66 , G01J5/10
摘要: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.
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