公开(公告)号：US09839976B2

公开(公告)日：2017-12-12

申请号：US14533997

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph Michael Ranish

IPC: B23K26/06 ,  H01L21/268 ,  B23K26/00 ,  B23K26/073 ,  H01L21/324 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20160208415A1

公开(公告)日：2016-07-21

申请号：US14908505

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Christopher Dennis Bencher ,  Peng Xie ,  Stephen Moffatt ,  Bruce E. Adams ,  Majeed A. Foad

IPC: C30B30/04 ,  C30B19/08 ,  C30B29/02

CPC classification number: C30B30/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/5806 ,  C30B19/08 ,  C30B29/02

Abstract: A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a base layer having grains on a wafer substrate where the wafer substrate is a part of a wafer on the work platform; and a magnetic assembly fixed relative to the heating element for aligning the grains of the base layer using a magnetic field of 10 Tesla or greater for formation of an interconnect having a crystal orientation of grains in the interconnect matching the crystal orientation of the grains of the base layer.

Abstract translation: 磁场引导晶体取向系统及其磁场引导晶体取向系统的操作方法，包括：工作平台; 工作平台上方的加热元件，用于选择性地加热晶片衬底上具有晶粒的基底层，其中晶片衬底是工作平台上的晶片的一部分; 以及相对于所述加热元件固定的磁性组件，用于使用10特斯拉或更大的磁场对准所述基底层的晶粒，以形成所述互连中的晶粒取向与所述晶体的晶体取向相匹配 基层。

公开(公告)号：US09285595B2

公开(公告)日：2016-03-15

申请号：US14594890

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B17/08

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US09146337B2

公开(公告)日：2015-09-29

申请号：US14137592

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Theodore P. Moffitt ,  Stephen Moffatt

IPC: G02B27/10 ,  G02B3/00 ,  G02B27/48

CPC classification number: G02B3/0037 ,  G02B27/48

Abstract: Embodiments described herein relate to thermal processing of semiconductor substrates. More specifically, embodiments described herein relate to laser thermal processing of semiconductor substrates. In certain embodiments, a uniformizer is provided to spatially and temporally decorrelate a coherent light image.

Abstract translation: 本文所述的实施例涉及半导体衬底的热处理。 更具体地，本文所述的实施例涉及半导体衬底的激光热处理。 在某些实施例中，提供均匀器来空间和时间地去相关联相干光图像。