公开(公告)号：US10234772B2

公开(公告)日：2019-03-19

申请号：US15829809

申请日：2017-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03B27/68 ,  G03F7/20

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US10147623B2

公开(公告)日：2018-12-04

申请号：US15668647

申请日：2017-08-03

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Bruce E. Adams

IPC: H01L21/67

Abstract: Embodiments of the invention generally relate to pyrometry during thermal processing of semiconductor substrates. More specifically, embodiments of the invention relate to a pyrometry filter for a thermal process chamber. In certain embodiments, the pyrometry filter selectively filters selected wavelengths of energy to improve a pyrometer measurement. The pyrometry filter may have various geometries which may affect the functionality of the pyrometry filter.

公开(公告)号：US09953851B2

公开(公告)日：2018-04-24

申请号：US15207226

申请日：2016-07-11

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Kim Vellore ,  Samuel C. Howells ,  Stephen Moffatt

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/26 ,  H01L21/42 ,  H01L21/44 ,  H01L21/67 ,  H01L21/268 ,  B23K26/00 ,  B23K26/03 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/324 ,  B23K101/40

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

公开(公告)号：US09864280B2

公开(公告)日：2018-01-09

申请号：US14874353

申请日：2015-10-02

Applicant: Applied Materials Inc.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G06F7/20 ,  G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US20170097576A1

公开(公告)日：2017-04-06

申请号：US14874353

申请日：2015-10-02

Applicant: Applied Materials Inc.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US09390926B2

公开(公告)日：2016-07-12

申请号：US14159228

申请日：2014-01-20

Applicant: Applied Materials, Inc.

Inventor： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Kim Vellore ,  Samuel C. Howells ,  Stephen Moffatt

IPC: H01L21/00 ,  H01L21/268 ,  B23K26/00 ,  B23K26/03 ,  H01L21/20 ,  H01L21/26 ,  H01L21/36 ,  H01L21/42 ,  H01L21/44

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

Abstract translation: 本文所述的实施例涉及热处理的装置和方法。 更具体地，本文所述的装置和方法涉及通过增加基板表面上的图像中的能量分布的均匀性来对半导体基板进行激光热处理。

公开(公告)号：US20150293371A1

公开(公告)日：2015-10-15

申请号：US14438706

申请日：2013-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Daoying Song ,  Leo B. Kwak ,  Bruce E. Adams ,  Theodore P. Moffitt

IPC: G02B27/42 ,  B23K26/36 ,  G02F1/153

CPC classification number: G02B27/4233 ,  B23K26/361 ,  G02F1/153 ,  H01M4/0402 ,  H01M2010/0495 ,  H01M2220/30

Abstract: A method of fabricating an electrochemical device, comprising: depositing device layers, including electrodes and corresponding current collectors, and an electrolyte layer, on a substrate; and directly patterning at least one of said device layers by a laser light pattern generated by a laser beam incident on a diffractive optical element, the laser light pattern directly patterning at least an entire device in a single laser shot. The laser direct patterning may include, among others: die patterning of thin film electrochemical devices after all active layers have been deposited; selective ablation of cathode/anode material from corresponding current collectors; and selective ablation of electrolyte material from current collectors, Furthermore, directly patterning of the electrochemical device may be by a shaped beam generated by a laser beam incident on a diffractive optical element, and the shaped beam may be moved across the working surface of the device.

Abstract translation: 一种制造电化学装置的方法，包括：在衬底上沉积包括电极和相应的集电器的电极层和电解质层; 并且通过由入射在衍射光学元件上的激光束产生的激光图案直接图案化所述器件层中的至少一个，所述激光图案直接在单个激光照射中构图至少整个器件。 激光直接图案化可以包括：在所有活性层已经沉积之后，薄膜电化学装置的模具图案化; 从相应的集电器选择性地消融阴极/阳极材料; 以及从集电体中选择性地消融电解质材料。此外，电化学装置的直接图案化可以是通过入射在衍射光学元件上的激光束产生的成形光束，并且成形光束可以移动穿过该装置的工作表面 。

公开(公告)号：US12078547B2

公开(公告)日：2024-09-03

申请号：US17487993

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Bruce E. Adams ,  Samuel C. Howells ,  Alvaro Garcia ,  Barry P. Craver ,  Tony Jefferson Gnanaprakasa ,  Lei Lian

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

CPC classification number: G01J5/58 ,  H01J37/32522 ,  H01L22/12 ,  G01J2005/583 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

公开(公告)号：US09927622B2

公开(公告)日：2018-03-27

申请号：US15003996

申请日：2016-01-22

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC: G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B27/00 ,  G02B27/30 ,  G02B17/08

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

公开(公告)号：US09908200B2

公开(公告)日：2018-03-06

申请号：US14480415

申请日：2014-09-08

Applicant: Applied Materials, Inc.

Inventor： Bruce E. Adams ,  Samuel C. Howells ,  Dean Jennings ,  Jiping Li ,  Timothy N. Thomas ,  Stephen Moffatt

IPC: B23K26/02 ,  B23K26/06 ,  B23K26/073 ,  B23K26/067 ,  G02B27/09 ,  B23K26/0622 ,  B23K103/00

CPC classification number: B23K26/073 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0732 ,  B23K2103/56 ,  G02B27/0961

Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify.