公开(公告)号：US20190090338A1

公开(公告)日：2019-03-21

申请号：US15710667

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee KOH ,  Haitao WANG ,  Philip Allan KRAUS ,  Vijay D. PARKHE ,  Daniel DISTASO ,  Christopher A. ROWLAND ,  Mark MARKOVSKY ,  Robert CASANOVA

IPC: H05H1/34 ,  H05B7/18 ,  H02N13/00

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.

公开(公告)号：US20190088522A1

公开(公告)日：2019-03-21

申请号：US15710773

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Roger Alan LINDLEY ,  Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of direct-current (“DC”) voltage through a switching system to electrodes disposed in the ESC substrate support. In some embodiments, the switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. In some embodiments, during processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US20190088519A1

公开(公告)日：2019-03-21

申请号：US15710700

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Jaeyong CHO ,  Philip Allan KRAUS

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/311

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.

公开(公告)号：US20180144907A1

公开(公告)日：2018-05-24

申请号：US15405758

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Steven E. BABAYAN ,  Philip Allan KRAUS

IPC: H01J37/32 ,  B05B1/00 ,  B05B1/18 ,  B05B12/10

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  B05B12/10 ,  H01J37/32522 ,  H01J37/32981 ,  H01J2237/3341 ,  H01L21/67069 ,  H01L21/67248

Abstract: Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a gas distribution plate and one or more temperature detection assemblies. The gas distribution plate includes a body having a top surface and a bottom surface. The one or more temperature detection assemblies are interfaced with the top surface of the gas distribution plate such that a thermal bond is formed between the gas distribution plate and each of the one or more temperature detection assemblies. Each temperature detection assembly includes a protruded feature and a temperature probe. The protruded feature is interfaced with the top surface of the gas distribution plate such that an axial load is placed on the gas distribution plate along an axis of the protruded feature. The temperature probe is positioned in a body of the protruded feature.