公开(公告)号：US20180053634A1

公开(公告)日：2018-02-22

申请号：US15238695

申请日：2016-08-16

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/455

Abstract: Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

公开(公告)号：US20190088520A1

公开(公告)日：2019-03-21

申请号：US15710753

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/02 ,  H01L21/223 ,  H01L21/3065

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20190088521A1

公开(公告)日：2019-03-21

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Philip Allan KRAUS ,  Travis Lee KOH ,  Christian AMORMINO ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.

公开(公告)号：US20190326098A1

公开(公告)日：2019-10-24

申请号：US15958478

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Hanh NGUYEN ,  Thai Cheng CHUA ,  Philip Allan KRAUS

IPC: H01J37/32

Abstract: Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.

公开(公告)号：US20190326095A1

公开(公告)日：2019-10-24

申请号：US15958470

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Christian AMORMINO ,  Hanh NGUYEN ,  Kallol BERA ,  Philip Allan KRAUS

IPC: H01J37/32

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US20190326090A1

公开(公告)日：2019-10-24

申请号：US15958562

申请日：2018-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Hahn NGUYEN ,  Thai Cheng CHUA ,  Philip Allan KRAUS

IPC: H01J37/32

Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

公开(公告)号：US20210313213A1

公开(公告)日：2021-10-07

申请号：US17353643

申请日：2021-06-21

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02 ,  H01J37/00

Abstract: A method and apparatus for biasing regions of a substrate in a plasma-assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20210183681A1

公开(公告)日：2021-06-17

申请号：US17186873

申请日：2021-02-26

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02 ,  H01J37/00

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20190259598A1

公开(公告)日：2019-08-22

申请号：US15899656

申请日：2018-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong CHEN ,  Kelvin CHAN ,  Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/677

Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

公开(公告)号：US20190088522A1

公开(公告)日：2019-03-21

申请号：US15710773

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Roger Alan LINDLEY ,  Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of direct-current (“DC”) voltage through a switching system to electrodes disposed in the ESC substrate support. In some embodiments, the switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. In some embodiments, during processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.