公开(公告)号：US20170306494A1

公开(公告)日：2017-10-26

申请号：US15416295

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Xing LIN ,  Vijay D. PARKHE ,  Jianhua ZHOU ,  Edward P. HAMMOND, IV ,  Jaeyong CHO ,  Zheng John YE ,  Zonghui SU ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/509 ,  H01L21/67 ,  C23C16/458 ,  C23C16/455 ,  H01L21/683 ,  C23C16/46

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/68792

Abstract: A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, the heated substrate support pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body A stem is coupled to a bottom surface of the body. A plurality of heater elements, a top electrode and a shield electrode are disposed within the body. The top electrode is disposed adjacent a top surface of the body, while the shield electrode is disposed adjacent the bottom surface of the body. A conductive rod is disposed through the stem and is coupled to the top electrode.

公开(公告)号：US20210313213A1

公开(公告)日：2021-10-07

申请号：US17353643

申请日：2021-06-21

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02 ,  H01J37/00

Abstract: A method and apparatus for biasing regions of a substrate in a plasma-assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20210183681A1

公开(公告)日：2021-06-17

申请号：US17186873

申请日：2021-02-26

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/223 ,  H01L21/02 ,  H01J37/00

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20190088519A1

公开(公告)日：2019-03-21

申请号：US15710700

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Jaeyong CHO ,  Philip Allan KRAUS

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/311

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.

公开(公告)号：US20250096703A1

公开(公告)日：2025-03-20

申请号：US18789634

申请日：2024-07-30

Applicant: Applied Materials, Inc.

Inventor： Sajad YAZDANI ,  Jaeyong CHO ,  Alexander SULYMAN ,  Tomoaki KOHZU ,  Kyounghwan NA

IPC: H02N13/00 ,  C23C16/458

Abstract: Embodiments of electrostatic chucks (ESCs) are provided herein. In some embodiments, an electrostatic chuck includes: a dielectric plate having an upper surface and a plurality of mesas extending from the upper surface to a first height to at least partially define a support surface for the substrate; four backside gas cooling zones disposed in the dielectric plate; four gas channels disposed in the dielectric plate and corresponding to the four backside gas cooling zones, wherein the four gas channels are fluidly independent within the dielectric plate and extend from a lower surface of the dielectric plate to a plurality of cooling gas outlets extending to the upper surface within each corresponding cooling zone; a plurality of seal rings extending from the upper surface of the dielectric plate to the first height and defining the four backside gas cooling zones; and one or more electrodes disposed in the dielectric plate.

公开(公告)号：US20210296098A1

公开(公告)日：2021-09-23

申请号：US16853600

申请日：2020-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jaeyong CHO ,  Rajinder DHINDSA ,  James ROGERS ,  Anwar HUSAIN

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.

公开(公告)号：US20190088520A1

公开(公告)日：2019-03-21

申请号：US15710753

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Philip Allan KRAUS ,  Thai Cheng CHUA ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/02 ,  H01L21/223 ,  H01L21/3065

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

公开(公告)号：US20240145220A1

公开(公告)日：2024-05-02

申请号：US17974088

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Jaeyong CHO ,  Rajinder DHINDSA ,  Daniel Sang BYUN ,  Vladimir KNYAZIK

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01L21/6833

Abstract: Examples of a substrate support assembly are provided herein. In some examples, the substrate support assembly has a ceramic electrostatic chuck having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic electrostatic chuck includes an electrode embedded in the ceramic electrostatic chuck. The substrate support assembly has a cooling plate disposed under the second side of the ceramic electrostatic chuck, wherein the cooling plate includes an inner portion separated from an outer portion. The substrate support assembly has a bond layer coupling the ceramic electrostatic chuck to the cooling plate, wherein the bond layer is of a first material in the outer portion of the cooling plate and of a second material in the inner portion of the cooling plate, and wherein the first material has a greater thermal conductivity than that of the second material.

公开(公告)号：US20210035844A1

公开(公告)日：2021-02-04

申请号：US16939160

申请日：2020-07-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Jaeyong CHO ,  Kartik RAMASWAMY ,  Daniel Sang BYUN

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments of a process kit are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes: a ceramic ring having an upper surface and a lower surface, wherein the ceramic ring includes a chucking electrode disposed in the ceramic ring and a heating element disposed in the ceramic ring; and an edge ring disposed on the ceramic ring.

公开(公告)号：US20190088521A1

公开(公告)日：2019-03-21

申请号：US15710763

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng CHUA ,  Philip Allan KRAUS ,  Travis Lee KOH ,  Christian AMORMINO ,  Jaeyong CHO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.