公开(公告)号：US20190099977A1

公开(公告)日：2019-04-04

申请号：US15724045

申请日：2017-10-03

Applicant: Applied Materials, Inc.

Inventor： Vijay D. PARKHE ,  Roger Alan LINDLEY

IPC: B32B3/26 ,  H01L21/683 ,  B32B5/18

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

公开(公告)号：US20160372307A1

公开(公告)日：2016-12-22

申请号：US14742142

申请日：2015-06-17

Applicant: Applied Materials, Inc.

Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

公开(公告)号：US20220063236A1

公开(公告)日：2022-03-03

申请号：US17523973

申请日：2021-11-11

Applicant: Applied Materials, Inc.

Inventor： Vijay D. PARKHE ,  Roger Alan LINDLEY

IPC: B32B3/26 ,  B32B5/18 ,  H01L21/683 ,  H01L21/687 ,  B32B7/12

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

公开(公告)号：US20200276785A1

公开(公告)日：2020-09-03

申请号：US16876326

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Vijay D. PARKHE ,  Roger Alan LINDLEY

IPC: B32B3/26 ,  B32B5/18 ,  H01L21/683 ,  H01L21/687 ,  B32B7/12

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

公开(公告)号：US20180366306A1

公开(公告)日：2018-12-20

申请号：US16113736

申请日：2018-08-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20240332092A1

公开(公告)日：2024-10-03

申请号：US18191697

申请日：2023-03-28

Applicant: Applied Materials, Inc.

Inventor： Zhiqiang HUANG ,  Li Ming TAN ,  Joanna Kejun LOH ,  Olivia Fatma KOENTJORO ,  Roger Alan LINDLEY

IPC: H01L21/66 ,  G05B13/02 ,  G05B13/04

CPC classification number: H01L22/12 ,  G05B13/0265 ,  G05B13/048

Abstract: The disclosure describes methods and systems for training and deploying a machine learning predictive model for use in a semiconductor manufacturing process. Specifically, the present disclosure provides for training machine learning predictive models for manufacturing components using design data, process parameters, gas flow configurations from a pixelated showerhead, temperature profile across an electrostatic chuck, and measured uniformity profiles of processed wafers. The present disclosure also provides for deploying the machine learning predictive model to effectuate real-time adjustments to a manufacturing process.

公开(公告)号：US20240329626A1

公开(公告)日：2024-10-03

申请号：US18191710

申请日：2023-03-28

Applicant: Applied Materials, Inc.

Inventor： Kay Siong NG ,  Yunpeng WU ,  Olivia Fatma KOENTJORO ,  Roger Alan LINDLEY

IPC: G05B19/418

CPC classification number: G05B19/41885 ,  G05B2219/45032

Abstract: The disclosure describes methods and systems for operating a manufacturing process with a concurrent real-time simulation of the manufacturing process via a digital twin model. Sensor data indicative of parameters of an ongoing manufacturing process are input into the digital twin model, and used to predict an output of the manufacturing process. The predicted output is compared to a target output. One or more trained machine learning models are used to determine a corrective action to be implemented by a controller of the manufacturing process to minimize any deviation from the target output.

公开(公告)号：US20190088522A1

公开(公告)日：2019-03-21

申请号：US15710773

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Roger Alan LINDLEY ,  Philip Allan KRAUS ,  Thai Cheng CHUA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of direct-current (“DC”) voltage through a switching system to electrodes disposed in the ESC substrate support. In some embodiments, the switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. In some embodiments, during processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.