公开(公告)号：USD732644S1

公开(公告)日：2015-06-23

申请号：US29481315

申请日：2014-02-04

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Kazuo Sato ,  Naoto Tsuji

公开(公告)号：USD732145S1

公开(公告)日：2015-06-16

申请号：US29493831

申请日：2014-06-13

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Naoto Tsuji ,  Kazuo Sato

公开(公告)号：US20140099798A1

公开(公告)日：2014-04-10

申请号：US13646471

申请日：2012-10-05

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji

IPC: H01L21/268

CPC classification number: H01L21/268 ,  H01L21/2686

Abstract: A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit having at least one dielectric barrier discharge excimer lamp which is constituted by a luminous tube containing a rare gas wherein an inner surface of the luminous tube is coated with a fluorescent substance having a peak emission spectrum in a wavelength range of 190 nm to 350 nm; and a reaction chamber disposed under the UV lamp unit and connected thereto via a transmission window.

Abstract translation: 一种用于处理半导体衬底的UV照射设备包括：具有至少一个电介质阻挡放电准分子灯的UV灯单元，其由包含稀有气体的发光管构成，其中发光管的内表面涂覆有具有 在190nm至350nm的波长范围内的峰值发射光谱; 以及设置在UV灯单元下方并经由透射窗与之连接的反应室。

公开(公告)号：US09885112B2

公开(公告)日：2018-02-06

申请号：US14557774

申请日：2014-12-02

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Kazuo Sato ,  Takayuki Yamagishi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244

Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

公开(公告)号：USD735836S1

公开(公告)日：2015-08-04

申请号：US29515929

申请日：2015-01-28

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Naoto Tsuji ,  Kazuo Sato

公开(公告)号：USD733843S1

公开(公告)日：2015-07-07

申请号：US29511011

申请日：2014-12-05

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Kazuo Sato ,  Naoto Tsuji

公开(公告)号：USD733261S1

公开(公告)日：2015-06-30

申请号：US29514153

申请日：2015-01-08

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Kazuo Sato ,  Naoto Tsuji

公开(公告)号：USD726884S1

公开(公告)日：2015-04-14

申请号：US29481308

申请日：2014-02-04

Applicant: ASM IP Holding B.V.

Designer： Takayuki Yamagishi ,  Kazuo Sato ,  Naoto Tsuji

公开(公告)号：US08912101B2

公开(公告)日：2014-12-16

申请号：US13799708

申请日：2013-03-13

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Atsuki Fukazawa ,  Noboru Takamure ,  Suvi Haukka ,  Antti Juhani Niskanen ,  Hyung Sang Park

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76829

Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Abstract translation: 通过原子层沉积（ALD）在衬底上形成含硅电介质膜的方法包括：提供两个前体，在其分子中含有卤素的一种前体，在其分子中含有硅但不含卤素的另一种前体，吸附第一 前体，其是沉积单层第一前体的底物上的两种前体之一; 将作为所述两种前体中的另一种的第二前体吸附到所述第一前体的单层上以沉积所述第二前体的单层; 并将第二前体的单层暴露于反应物的自由基以引起与自由基的表面反应以形成含硅膜的化合物单层。

公开(公告)号：US20140213065A1

公开(公告)日：2014-07-31

申请号：US13749878

申请日：2013-01-25

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji ,  Fumitaka Shoji

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32055 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/76832

Abstract: A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

Abstract translation: 用于形成由重复堆叠层构成的层的方法包括：在不同沉积条件下在衬底上形成第一层和第二层以形成堆叠层，其中第一层和第二层的膜应力是拉伸的或压缩的和相反的 并且第一和第二层的湿蚀刻速率彼此至少是50次不同; 并重复上述步骤以形成由重复堆叠层构成的层，其中用于形成至少一层叠层的沉积条件与用于形成另一层叠层的沉积条件不同。