公开(公告)号：US12252785B2

公开(公告)日：2025-03-18

申请号：US16888423

申请日：2020-05-29

Applicant: ASM IP Holding B.V.

Inventor： Gregory Deye ,  Joseph P. Margetis ,  John Tolle

IPC: C23C16/44 ,  H01L21/02

Abstract: A method of cleaning an epitaxial reaction chamber in-situ is disclosed. The method may include a pre-coating step, a high temperature baking step, and a gas etching step. The method is able to remove residue buildup within the reaction chamber, which may be made of quartz.

公开(公告)号：US20220310825A1

公开(公告)日：2022-09-29

申请号：US17839725

申请日：2022-06-14

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L29/66 ,  H01L21/285 ,  H01L29/78 ,  H01L29/167 ,  H01L29/08 ,  H01L23/535 ,  H01L21/02

Abstract: A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20220130668A1

公开(公告)日：2022-04-28

申请号：US17509290

申请日：2021-10-25

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Robert Vyne

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455 ,  C23C16/02

Abstract: A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.

公开(公告)号：US11264255B2

公开(公告)日：2022-03-01

申请号：US16447297

申请日：2019-06-20

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric R. Hill

IPC: B05C9/14 ,  H01L21/67

Abstract: A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

公开(公告)号：US11053585B2

公开(公告)日：2021-07-06

申请号：US16695274

申请日：2019-11-26

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric Hill

IPC: C23C16/44 ,  H05B3/26 ,  C23C16/46 ,  C23C16/458 ,  H05B6/10 ,  C23C14/02 ,  C23C14/50 ,  C23C16/02

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US11018002B2

公开(公告)日：2021-05-25

申请号：US16000156

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L21/336 ,  H01L21/02 ,  H01L29/66 ,  H01L21/285 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/8238

Abstract: A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US10787741B2

公开(公告)日：2020-09-29

申请号：US15860564

申请日：2018-01-02

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Eric Hill ,  Jereld Lee Winkler

IPC: C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/452

Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

公开(公告)号：US20200002811A1

公开(公告)日：2020-01-02

申请号：US16024390

申请日：2018-06-29

Applicant: ASM IP Holding B.V.

Inventor： Sonti Sreeram ,  John Tolle ,  Joe Margetis ,  Junwei Su

IPC: C23C16/455

Abstract: A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

公开(公告)号：US10519541B2

公开(公告)日：2019-12-31

申请号：US16029130

申请日：2018-07-06

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric Hill

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/02 ,  C23C14/50 ,  C23C16/46 ,  H05B6/10 ,  C23C14/02

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US10510536B2

公开(公告)日：2019-12-17

申请号：US15940801

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  John Tolle

IPC: H01L21/02 ,  H01L23/12

Abstract: Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.