公开(公告)号：US20220130668A1

公开(公告)日：2022-04-28

申请号：US17509290

申请日：2021-10-25

申请人： ASM IP Holding B.V.

发明人： John Tolle ,  Robert Vyne

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455 ,  C23C16/02

摘要： A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.

公开(公告)号：US11264255B2

公开(公告)日：2022-03-01

申请号：US16447297

申请日：2019-06-20

申请人： ASM IP HOLDING B.V.

发明人： John Tolle ,  Eric R. Hill

IPC分类号： B05C9/14 ,  H01L21/67

摘要： A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

公开(公告)号：US11053585B2

公开(公告)日：2021-07-06

申请号：US16695274

申请日：2019-11-26

申请人： ASM IP HOLDING B.V.

发明人： John Tolle ,  Eric Hill

IPC分类号： C23C16/44 ,  H05B3/26 ,  C23C16/46 ,  C23C16/458 ,  H05B6/10 ,  C23C14/02 ,  C23C14/50 ,  C23C16/02

摘要： A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US11018002B2

公开(公告)日：2021-05-25

申请号：US16000156

申请日：2018-06-05

申请人： ASM IP Holding B.V.

发明人： Joe Margetis ,  John Tolle

IPC分类号： H01L21/336 ,  H01L21/02 ,  H01L29/66 ,  H01L21/285 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/8238

摘要： A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US10787741B2

公开(公告)日：2020-09-29

申请号：US15860564

申请日：2018-01-02

申请人： ASM IP Holding B.V.

发明人： John Tolle ,  Eric Hill ,  Jereld Lee Winkler

IPC分类号： C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/452

摘要： A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

公开(公告)号：US20200002811A1

公开(公告)日：2020-01-02

申请号：US16024390

申请日：2018-06-29

申请人： ASM IP Holding B.V.

发明人： Sonti Sreeram ,  John Tolle ,  Joe Margetis ,  Junwei Su

IPC分类号： C23C16/455

摘要： A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

公开(公告)号：US10519541B2

公开(公告)日：2019-12-31

申请号：US16029130

申请日：2018-07-06

申请人： ASM IP HOLDING B.V.

发明人： John Tolle ,  Eric Hill

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/02 ,  C23C14/50 ,  C23C16/46 ,  H05B6/10 ,  C23C14/02

摘要： A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US10510536B2

公开(公告)日：2019-12-17

申请号：US15940801

申请日：2018-03-29

申请人： ASM IP Holding B.V.

发明人： David Kohen ,  John Tolle

IPC分类号： H01L21/02 ,  H01L23/12

摘要： Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.

公开(公告)号：US20190237327A1

公开(公告)日：2019-08-01

申请号：US15886225

申请日：2018-02-01

申请人： ASM IP Holding B.V.

发明人： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC分类号： H01L21/02 ,  H01L29/165

摘要： A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US20180323059A1

公开(公告)日：2018-11-08

申请号：US15957565

申请日：2018-04-19

申请人： ASM IP Holding B.V.

发明人： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC分类号： H01L21/02 ,  H01L29/66 ,  C30B25/10 ,  C30B29/10

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B25/10 ,  C30B29/06 ,  C30B29/10 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/66795

摘要： A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.