公开(公告)号：US20240112930A1

公开(公告)日：2024-04-04

申请号：US18476117

申请日：2023-09-27

Applicant: ASM IP Holding, B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Wentao Wang ,  Kai Zhou ,  Kishor Patil ,  Han Ye ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/67 ,  B23K26/03 ,  B23K26/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  G05D23/19

CPC classification number: H01L21/67115 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/0643 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/483 ,  C23C16/52 ,  G05D23/1931 ,  H01L21/67109

Abstract: A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

公开(公告)号：US20240071805A1

公开(公告)日：2024-02-29

申请号：US18238577

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Peipei Gao ,  Wentao Wang ,  Aniket Chitale ,  Xing Lin ,  Alexandros Demos ,  Yanfu Lu

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67069

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

公开(公告)号：US20230002895A1

公开(公告)日：2023-01-05

申请号：US17810094

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC: C23C16/458 ,  C23C16/455

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.