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    MASK DEFECT DETECTION
    21.
    发明申请
    MASK DEFECT DETECTION 有权

    公开(公告)号：US20230046682A1

    公开(公告)日：2023-02-16

    申请号：US17886348

    申请日：2022-08-11

    Applicant: ASML Netherlands B.V.

    Inventor： Fuming WANG ,  Marco Jan-Jaco WIELAND ,  Yu CAO ,  Guohong ZHANG

    IPC: G03F1/86 ,  G03F7/20

    Abstract: An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

    METHOD FOR TRAINING MACHINE LEARNING MODEL TO DETERMINE OPTICAL PROXIMITY CORRECTION FOR MASK
    24.
    发明申请
    METHOD FOR TRAINING MACHINE LEARNING MODEL TO DETERMINE OPTICAL PROXIMITY CORRECTION FOR MASK 有权

    公开(公告)号：US20220137503A1

    公开(公告)日：2022-05-05

    申请号：US17429770

    申请日：2020-01-24

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun TAO ,  Stanislas Hugo Louis BARON ,  Jing SU ,  Ya LUO ,  Yu CAO

    IPC: G03F1/36 ,  G06T7/00 ,  G06T7/60

    Abstract: Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

    METHOD AND SYSTEM FOR LITHOGRAPHY PROCESS-WINDOW-MAXIMIZING OPTICAL PROXIMITY CORRECTION
    26.
    发明申请
    METHOD AND SYSTEM FOR LITHOGRAPHY PROCESS-WINDOW-MAXIMIZING OPTICAL PROXIMITY CORRECTION 审中-公开
    用于光刻过程窗口最大化光学近似校正的方法和系统

    公开(公告)号：US20160246168A1

    公开(公告)日：2016-08-25

    申请号：US15144242

    申请日：2016-05-02

    Applicant: ASML NETHERLANDS B.V

    Inventor： Jun YE ,  Yu CAO ,  Hanying FENG

    IPC: G03F1/36 ,  G06F17/50

    CPC classification number: G03F1/36 ,  G03F1/144 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5081 ,  G06F2217/12

    Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

    Abstract translation: 一种提高用于成像具有多个特征的目标设计的光刻工艺的成像性能的有效的OPC方法。 该方法包括确定用于产生模拟图像的功能，其中功能考虑与光刻工艺相关联的工艺变化; 并基于此功能对每个OPC迭代中的每个评估点优化目标灰度级。 在一个给定的实施例中，该函数近似为聚焦和曝光的多项式函数，R（ε，ƒ）= P0 +ƒ2·Pb，轮廓线的阈值为T +Vε，其中PO表示标称焦点的图像强度， 表示相对于标称焦点的散焦值，ε表示曝光变化，V表示曝光变化的缩放，参数“Pb”表示二阶导数图像。 在另一个给定的实施例中，假设聚焦和曝光变化的概率分布为高斯，给出最佳聚焦的分析最佳灰度级。

    METHODS AND SYSTEMS FOR PATTERN DESIGN WITH TAILORED RESPONSE TO WAVEFRONT ABERRATION
    27.
    发明申请
    METHODS AND SYSTEMS FOR PATTERN DESIGN WITH TAILORED RESPONSE TO WAVEFRONT ABERRATION 有权
    图形设计的方法和系统，具有针对波形排除的定制响应

    公开(公告)号：US20150153651A1

    公开(公告)日：2015-06-04

    申请号：US14575609

    申请日：2014-12-18

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hanying FENG ,  Yu CAO ,  Jun YE ,  Youping ZHANG

    IPC: G03F7/20

    Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

    Abstract translation: 本发明涉及用于设计对参数变化非常敏感的规格图案的方法和系统，因此对于用于对具有多个特征进行成像的目标设计的光刻工艺的校准中的随机和重复的测量误差是鲁棒的。 该方法可以包括以最佳辅助特征放置来识别最敏感的线宽/间距组合，其导致针对光刻过程参数变化（例如波前像差参数变化）的最敏感的CD（或其他光刻响应参数）变化。 该方法还可以包括设计具有多于一个测试图案的计量器，使得量规的组合响应可以被调整以产生对波前相关或其它光刻工艺参数的特定响应。 对参数变化的敏感性导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

    METHODS AND SYSTEM FOR MODEL-BASED GENERIC MATCHING AND TUNING
    28.
    发明申请
    METHODS AND SYSTEM FOR MODEL-BASED GENERIC MATCHING AND TUNING 审中-公开
    基于模型的通用匹配和调谐的方法和系统

    公开(公告)号：US20150074619A1

    公开(公告)日：2015-03-12

    申请号：US14543326

    申请日：2014-11-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yu CAO ,  Hanying FENG ,  Jun YE

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

    Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

    Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。

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