公开(公告)号：US20210090947A1

公开(公告)日：2021-03-25

申请号：US16581018

申请日：2019-09-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L21/768 ,  H01L23/48 ,  H01L21/3213

Abstract: A semiconductor substrate and a method of manufacturing the same are provided. The semiconductor substrate includes a dielectric layer, at least one first conductive trace, and a conductive via. The dielectric layer has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The first conductive trace is disposed adjacent to the first dielectric surface of the dielectric layer. The conductive via is disposed adjacent to the second dielectric surface of the dielectric layer and connected to the first conductive trace, where the conductive via and the first conductive trace are connected at a first interface leveled with about a half thickness of the dielectric layer.

公开(公告)号：US20210083388A1

公开(公告)日：2021-03-18

申请号：US16575123

申请日：2019-09-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01Q9/04 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01L23/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a circuit layer and a first antenna structure. The circuit layer includes a first surface, and a second surface opposite to the first surface. The first antenna structure is disposed on the first surface and electrically connected to the circuit layer. The first antenna structure includes a first patch, a second patch, a third patch, a first dielectric layer and a second dielectric layer. The second patch is disposed on the first patch. The first dielectric layer has a first dielectric constant (Dk), and is disposed between the first patch and the second patch. The third patch is disposed on the second patch. The second dielectric layer has a second dielectric constant and is disposed between the second patch and the third patch. The first dielectric constant is smaller than the second dielectric constant.

公开(公告)号：US20210020579A1

公开(公告)日：2021-01-21

申请号：US16512140

申请日：2019-07-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/482 ,  H01L23/485

Abstract: A semiconductor device package includes a substrate and an electronic component disposed on the substrate. The electronic component has an active surface facing away from the substrate. The substrate has a first conductive pad and a second conductive pad disposed thereon. The electronic component has a first electrical contact and a second electrical contact disposed on the active surface. The semiconductor device package further includes a first metal layer connecting the first electrical contact with the first conductive pad, a second metal layer connecting the second electrical contact with the second conductive pad, a first seed layer disposed below the first metal layer; and a first isolation layer disposed between the first metal layer and the second metal layer. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US20200294929A1

公开(公告)日：2020-09-17

申请号：US16354155

申请日：2019-03-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L25/10 ,  H01L23/00

Abstract: An interconnection structure includes a first dielectric layer and a second dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer has a first surface and a second surface, both facing toward the first dielectric layer. The first surface of the second dielectric layer is recessed from the second surface of the second dielectric layer and defines a recess. A portion of the first dielectric layer is disposed within the recess.

公开(公告)号：US20200251353A1

公开(公告)日：2020-08-06

申请号：US16264607

申请日：2019-01-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

公开(公告)号：US20200144168A1

公开(公告)日：2020-05-07

申请号：US16182588

申请日：2018-11-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU ,  Huang-Hsien CHANG

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor packaging device includes a first patterned insulation layer, a patterned conductive layer, a semiconductor device and an encapsulant. The first patterned insulation layer has a first surface, a second surface opposite the first surface, and an island portion having the first surface. The first patterned insulation layer defines a tapered groove surrounding the island portion. The patterned conductive layer is disposed on the first surface of the island portion. The semiconductor device electrically connects to the patterned conductive layer. The encapsulant encapsulates the semiconductor device, the first patterned insulation layer and the patterned conductive layer.

公开(公告)号：US20190115294A1

公开(公告)日：2019-04-18

申请号：US15783353

申请日：2017-10-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/683 ,  H01L21/48

Abstract: A semiconductor package device includes an interconnection structure, an electronic component, a package body and an electrical contact. The dielectric layer has a top surface and a bottom surface. The dielectric layer defines a cavity extending from the bottom surface into the dielectric layer. A patterned conductive layer is disposed on the top surface of the dielectric layer. The conductive pad is at least partially disposed within the cavity and electrically connected to the patterned conductive layer. The conductive pad includes a first metal layer and a second metal layer. The second metal layer is disposed on the first metal layer and extends along a lateral surface of the first metal layer. The electronic component is electrically connected to the patterned conductive layer. The package body covers the electronic component and the patterned conductive layer. The electrical contact is electrically connected to the conductive pad.

公开(公告)号：US20170287871A1

公开(公告)日：2017-10-05

申请号：US15083527

申请日：2016-03-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L25/0655 ,  H01L21/561 ,  H01L21/568 ,  H01L23/16 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/562 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13082 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/48235 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/48227 ,  H01L2924/00012

Abstract: A semiconductor package structure includes a conductive structure, a semiconductor element disposed on and electrically connected to the conductive structure, a supporting structure, an encapsulant, and a metal layer. The supporting structure is disposed on the conductive structure and surrounds the semiconductor element. The encapsulant covers the semiconductor element. The metal layer is disposed on or embedded in the encapsulant.

公开(公告)号：US20250070058A1

公开(公告)日：2025-02-27

申请号：US18943876

申请日：2024-11-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01Q1/38

Abstract: A semiconductor device package includes an electronic component and a substrate. The electronic component has a first surface and a second surface. The substrate is connected to the first surface of the electronic component through an adhesive layer. The substrate includes a first antenna disposed over the second surface of the electronic components through the adhesive layer.

公开(公告)号：US20230027674A1

公开(公告)日：2023-01-26

申请号：US17958237

申请日：2022-09-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jhao-Cheng CHEN ,  Huang-Hsien CHANG ,  Wen-Long LU ,  Shao Hsuan CHUANG ,  Ching-Ju CHEN ,  Tse-Chuan CHOU

IPC: H01L23/00

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.