公开(公告)号：US20090108346A1

公开(公告)日：2009-04-30

申请号：US11927805

申请日：2007-10-30

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H01L27/07 ,  H01L21/8249

CPC分类号： H01L29/7831 ,  H01L27/0705 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7817

摘要： An MOS-bipolar hybrid-mode LDMOS device has a main gate input and a control gate input wherein the device operates in an MOS mode when both gate inputs are enabled, and operates in a bipolar mode when the main gate input is enabled and the control gate input is disabled. The device can drive the gate of a power MOSFET to deliver the high current required by the power MOSFET while in the bipolar mode, and provide a fully switching between supply voltage and ground to the gate of the power MOSFET while in the MOS mode.

摘要翻译： MOS双极混合模式LDMOS器件具有主栅极输入和控制栅极输入，其中当两个栅极输入被使能时，器件工作在MOS模式，并且当主栅极输入被使能并且控制 门禁输入禁用。 器件可以驱动功率MOSFET的栅极，以在双极模式下提供功率MOSFET所需的高电流，并且在MOS模式下提供功率MOSFET栅极之间的电源电压和接地之间的全面切换。

公开(公告)号：US20090067201A1

公开(公告)日：2009-03-12

申请号：US11850998

申请日：2007-09-06

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H02M3/335

CPC分类号： H02M3/33523

摘要： Embodiments disclosed herein describe an isolated switched-mode power supply with its output regulated from the primary side, by generating a sensing current using a sensing element coupled to the output of the power supply, and measuring a scaled version of the sensing current which depends on the output voltage, and calculating an estimate voltage representing the output voltage, and regulating the output of the isolated switched-mode power supply based on the estimate voltage.

摘要翻译： 本文公开的实施例描述了一种隔离的开关模式电源，其输出从初级侧调节，通过使用耦合到电源的输出的感测元件产生感测电流，并测量依赖于 输出电压，并计算表示输出电压的估计电压，并且基于估计电压调节隔离开关模式电源的输出。

公开(公告)号：US20080145723A1

公开(公告)日：2008-06-19

申请号：US11639941

申请日：2006-12-15

申请人： Shengxian Wang ,  Andrew Philip Shapiro ,  Jun Cai ,  Hai Yang ,  Rihua Xiong ,  Chang Wei ,  Bing Zhang ,  Qunjian Huang

发明人： Shengxian Wang ,  Andrew Philip Shapiro ,  Jun Cai ,  Hai Yang ,  Rihua Xiong ,  Chang Wei ,  Bing Zhang ,  Qunjian Huang

IPC分类号： H01M8/06 ,  H01M8/02

CPC分类号： H01M8/065 ,  H01M4/242 ,  H01M4/26 ,  H01M4/62 ,  H01M4/98 ,  H01M6/5005 ,  H01M8/04119 ,  H01M8/186 ,  H01M8/24 ,  H01M12/08 ,  H01M2004/027 ,  Y02E60/128

摘要： An apparatus for controlling humidity in a fuel cell is provided. The apparatus can include a housing having an interior surface defining a volume and containing at least one fuel cell disposed within the volume. The apparatus may also include a plurality of electrodes disposed within the volume. The apparatus can include an aperture defined by the housing through which at least one air gas stream can be in fluid communication with at least one of the plurality of electrodes. The apparatus can include a humidity-controlling component, wherein the humidity-controlling component is in fluid communication with the air gas stream prior to the air gas stream contacting the at least one of the plurality of electrodes, and humidity-controlling component being capable of controlling a relative humidity of the air gas stream. A method for controlling humidity in a fuel cell is provided.

摘要翻译： 提供一种用于控制燃料电池中的湿度的装置。 该装置可以包括壳体，其具有限定体积的内表面并且包含设置在体积内的至少一个燃料电池。 该装置还可以包括设置在该体积内的多个电极。 该装置可以包括由壳体限定的孔，至少一个空气气体流可以与多个电极中的至少一个流体连通。 所述装置可以包括湿度控制部件，其中所述湿度控制部件在所述空气流与所述多个电极中的至少一个接触之前与所述空气流体流体连通，并且所述调湿部件能够 控制气流的相对湿度。 提供了一种用于控制燃料电池中的湿度的方法。

公开(公告)号：US20080138954A1

公开(公告)日：2008-06-12

申请号：US12035758

申请日：2008-02-22

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/7825

摘要： A semiconductor device, such as a LDMOS device, comprising: a semiconductor substrate; a drain region in the semiconductor substrate; a source region in the semiconductor substrate laterally spaced from the drain region; and a drift region in the semiconductor substrate between the drain region and the source region. A gate is operatively coupled to the source region and is located offset from the drain region on a side of the source region opposite from the drain region. When the device is in an on state, current tends to flow deeper into the drift region to the offset gate, rather than near the device surface. The drift region preferably includes at least first and second stacked JFETs. The first and second stacked JFETs include first, second and third layers of a first conductivity type, a fourth layer intermediate the first and second layers including alternating pillars of the first conductivity type and of a second conductivity type extending between the source and drain regions; and a fifth layer intermediate the second and third layers, including alternating pillars of the first and second conductivity types extending between the source and drain regions.

摘要翻译： 一种半导体器件，例如LDMOS器件，包括：半导体衬底; 半导体衬底中的漏区; 所述半导体衬底中的源极区域与所述漏极区域横向间隔开; 以及在漏极区域和源极区域之间的半导体衬底中的漂移区域。 栅极可操作地耦合到源极区域并且位于与漏极区域相对的源极区域侧上的漏极区域偏移。 当器件处于导通状态时，电流趋向于更深地流入偏移栅极的漂移区域，而不是靠近器件表面。 漂移区优选地包括至少第一和第二堆叠JFET。 第一和第二堆叠JFET包括第一导电类型的第一，第二和第三层，第一和第二层中间的第四层，包括第一导电类型的交替柱和在源极和漏极区之间延伸的第二导电类型; 以及第二层和第三层之间的第五层，包括在源区和漏区之间延伸的第一和第二导电类型的交替柱。

公开(公告)号：US20080128744A1

公开(公告)日：2008-06-05

申请号：US11564948

申请日：2006-11-30

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H01L29/74 ,  H01L21/332

CPC分类号： H01L29/7394 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0847

摘要： A lateral Insulated Gate Bipolar Transistor (LIGBT) includes a semiconductor substrate and an anode region in the semiconductor substrate. A cathode region of a first conductivity type in the substrate is laterally spaced from the anode region, and a cathode region of a second conductivity type in the substrate is located proximate to and on a side of the cathode region of the first conductivity type opposite from the anode region. A drift region in the semiconductor substrate extends between the anode region and the cathode region of the first conductivity type. An insulated gate is operatively coupled to the cathode region of the first conductivity type and is located on a side of the cathode region of the first conductivity type opposite from the anode region. An insulating spacer overlies the cathode region of the second conductivity type. The lateral dimensions of the insulating spacer and the cathode region of the second conductivity type are substantially equal and substantially smaller than the lateral dimension of the cathode region of the first conductivity type.

摘要翻译： 横向绝缘栅双极晶体管（LIGBT）包括半导体衬底和半导体衬底中的阳极区域。 衬底中的第一导电类型的阴极区域与阳极区域横向间隔开，并且衬底中第二导电类型的阴极区域位于与第一导电类型相反的阴极区域附近和侧面 阳极区域。 半导体衬底中的漂移区域在第一导电类型的阳极区域和阴极区域之间延伸。 绝缘栅极可操作地耦合到第一导电类型的阴极区域，并且位于与阳极区域相反的第一导电类型的阴极区域的一侧。 绝缘间隔物覆盖第二导电类型的阴极区域。 绝缘间隔物和第二导电类型的阴极区域的横向尺寸基本相等并且基本上小于第一导电类型的阴极区域的横向尺寸。

公开(公告)号：US07355224B2

公开(公告)日：2008-04-08

申请号：US11454562

申请日：2006-06-16

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/7825

摘要： A semiconductor device, such as a LDMOS device, comprising: a semiconductor substrate; a drain region in the semiconductor substrate; a source region in the semiconductor substrate laterally spaced from the drain region; and a drift region in the semiconductor substrate between the drain region and the source region. A gate is operatively coupled to the source region and is located offset from the drain region on a side of the source region opposite from the drain region. When the device is in an on state, current tends to flow deeper into the drift region to the offset gate, rather than near the device surface. The drift region preferably includes at least first and second stacked JFETs. The first and second stacked JFETs include first, second and third layers of a first conductivity type, a fourth layer intermediate the first and second layers including alternating pillars of the first conductivity type and of a second conductivity type extending between the source and drain regions; and a fifth layer intermediate the second and third layers, including alternating pillars of the first and second conductivity types extending between the source and drain regions.

摘要翻译： 一种半导体器件，例如LDMOS器件，包括：半导体衬底; 半导体衬底中的漏区; 所述半导体衬底中的源极区域与所述漏极区域横向间隔开; 以及在漏极区域和源极区域之间的半导体衬底中的漂移区域。 栅极可操作地耦合到源极区域并且位于与漏极区域相对的源极区域侧上的漏极区域偏移。 当器件处于导通状态时，电流趋向于更深地流入偏移栅极的漂移区域，而不是靠近器件表面。 漂移区优选地包括至少第一和第二堆叠JFET。 第一和第二堆叠JFET包括第一导电类型的第一，第二和第三层，第一和第二层中间的第四层，包括第一导电类型的交替柱和在源极和漏极区之间延伸的第二导电类型; 以及第二层和第三层之间的第五层，包括在源区和漏区之间延伸的第一和第二导电类型的交替柱。

公开(公告)号：US20070141450A1

公开(公告)日：2007-06-21

申请号：US11313634

申请日：2005-12-21

申请人： Hai Yang ,  Qunjian Huang ,  Chang Wei ,  Jun Cai ,  Jinghua Liu ,  Shengxian Wang ,  Qijia Fu

发明人： Hai Yang ,  Qunjian Huang ,  Chang Wei ,  Jun Cai ,  Jinghua Liu ,  Shengxian Wang ,  Qijia Fu

IPC分类号： H01M2/36 ,  H01M2/08 ,  H01M8/10 ,  H01M8/24

CPC分类号： H01M8/0273 ,  H01M4/90 ,  H01M4/96 ,  H01M8/04141 ,  H01M8/04149 ,  H01M8/04156 ,  H01M8/083 ,  H01M8/186 ,  H01M8/2475 ,  H01M10/281 ,  H01M12/08 ,  H01M16/003 ,  H01M2008/1095 ,  H01M2250/20 ,  Y02E60/124 ,  Y02E60/128 ,  Y02T90/32

摘要： A fuel cell assembly may be provided that includes a first cathodic electrode and a second cathodic electrode; an anodic electrode positioned between the first cathodic electrode and the second cathodic electrode; a first membrane positioned between the first cathodic electrode and the anodic electrode; a second membrane positioned between the second cathodic electrode and the anodic electrode; and a seal ring for sealing the fuel cell assembly, the seal ring comprising a water-refilling mechanism.

摘要翻译： 可以提供包括第一阴极电极和第二阴极电极的燃料电池组件; 位于第一阴极电极和第二阴极电极之间的阳极; 位于所述第一阴极电极和所述阳极电极之间的第一膜; 位于所述第二阴极电极和所述阳极电极之间的第二膜; 以及用于密封燃料电池组件的密封环，所述密封环包括水重新填充机构。

公开(公告)号：US20070141440A1

公开(公告)日：2007-06-21

申请号：US11314226

申请日：2005-12-21

申请人： Hai Yang ,  Jun Cai ,  Jinghua Liu ,  Chang Wei ,  Qunjian Huang ,  Shengxian Wang ,  Qijia Fu

发明人： Hai Yang ,  Jun Cai ,  Jinghua Liu ,  Chang Wei ,  Qunjian Huang ,  Shengxian Wang ,  Qijia Fu

IPC分类号： H01M8/02 ,  H01M12/06 ,  H01M4/94 ,  H01M4/90

CPC分类号： H01M12/08 ,  H01M4/383 ,  H01M6/5005 ,  H01M8/225 ,  H01M12/06 ,  H01M2300/0014 ,  Y02E60/128

摘要： A galvanic cell structure is provided. The galvanic cell structure includes an outer cylinder featuring air inlets, a cathode, an anode, a membrane separating the cathode from the anode, and an inner cylinder featuring fluid inlets that may provide a volume for storing and/or transferring fluid for use in the galvanic cell.

摘要翻译： 提供电池结构。 电池单元结构包括具有空气入口的外圆筒，阴极，阳极，将阴极与阳极分开的膜，以及具有流体入口的内圆筒，其可提供用于储存和/或转移流体的体积 原电池。

公开(公告)号：US20070141431A1

公开(公告)日：2007-06-21

申请号：US11314619

申请日：2005-12-21

申请人： Shengxian Wang ,  Qijia Fu ,  Chang Wei ,  Jun Cai

发明人： Shengxian Wang ,  Qijia Fu ,  Chang Wei ,  Jun Cai

IPC分类号： H01M8/02 ,  H01M8/08 ,  H01M4/94 ,  H01M8/06

CPC分类号： H01M12/08 ,  H01M2/025 ,  H01M4/242 ,  H01M4/385 ,  H01M8/04089 ,  H01M8/083 ,  H01M8/186 ,  H01M8/2475 ,  H01M10/281 ,  H01M10/282 ,  H01M10/345 ,  H01M2300/0014 ,  Y02E60/128

摘要： A galvanic cell with a closed structure is provided. The cell may include a galvanic cell unit having a metal hydride anode, separators positioned on opposite sides of the metal hydride anode, oxygen electrodes positioned adjacent to the separators on sides opposite to the metal hydride anode, insulator plates positioned in contact with the oxygen electrodes, an electrolyte in contact with any one or more of the metal hydride anode, oxygen electrodes, insulator plates, or separators, and a pressure vessel enclosing the galvanic cell unit.

摘要翻译： 提供具有闭合结构的电池。 电池可以包括具有金属氢化物阳极的电池单元，位于金属氢化物阳极的相对侧上的隔板，与金属氢化物阳极相对的侧面与隔板相邻的氧电极，与氧电极相接触的绝缘板 与金属氢化物阳极，氧电极，绝缘体板或隔板中的任何一个或多个接触的电解质以及包围原电池单元的压力容器。

公开(公告)号：US20070141415A1

公开(公告)日：2007-06-21

申请号：US11566347

申请日：2006-12-04

申请人： Hai Yang ,  Chang Wei ,  Qunjian Huang ,  Jinghua Liu ,  Rihua Xiong ,  Jun Cai ,  Shengxian Wang

发明人： Hai Yang ,  Chang Wei ,  Qunjian Huang ,  Jinghua Liu ,  Rihua Xiong ,  Jun Cai ,  Shengxian Wang

IPC分类号： H01M8/04 ,  H01M4/96 ,  H01M8/06 ,  H01M4/90

CPC分类号： H01M12/005 ,  H01G9/08 ,  H01G9/155 ,  H01M8/04119 ,  H01M8/04216 ,  H01M8/18 ,  H01M12/06 ,  Y02E60/13

摘要： An apparatus including a housing having walls is provided. The walls of the housing each have inner surfaces and outer surfaces. The walls may include apertures extending from the inner surface to the outer surface. The inner surfaces of the walls define a volume. The volume includes an electrode. The volume further includes a water-controlling separator disposed between the inner surface of the housing and the electrode. The water-controlling separator can block a flow of liquid from the electrode through the apertures to the ambient environment while allowing oxidant to flow from the ambient environment through the apertures to the electrode.

摘要翻译： 提供一种包括具有壁的壳体的装置。 壳体的壁各自具有内表面和外表面。 壁可以包括从内表面延伸到外表面的孔。 壁的内表面定义一个体积。 体积包括电极。 体积还包括设置在壳体的内表面和电极之间的防水分离器。 水控制分离器可以阻止液体从电极通过孔流到周围环境，同时允许氧化剂从周围环境通过孔流动到电极。