公开(公告)号：US06773931B2

公开(公告)日：2004-08-10

申请号：US10207525

申请日：2002-07-29

申请人： Alexander J. Pasadyn ,  Thomas J. Sonderman ,  Jin Wang

发明人： Alexander J. Pasadyn ,  Thomas J. Sonderman ,  Jin Wang

IPC分类号： H01L2100

CPC分类号： H01L22/20 ,  G05B19/41865 ,  G05B2219/37295 ,  G05B2219/45031 ,  H01L2223/54453 ,  Y02P90/20

摘要： A method and an apparatus for dynamic targeting for a process control system. A process step is performed upon a first workpiece in a batch based upon a process target setting. The process target setting comprises at least one parameter relating to a target characteristic of the first workpiece. Manufacturing data relating to processing of the first workpiece is acquired. The manufacturing data comprises at least one of a metrology data relating to the processed first workpiece and a tool state data relating to the tool state of a processing tool. Electrical data relating to the processed first workpiece is acquired at least partially during processing of a second workpiece in the batch. The process target setting is adjusted dynamically based upon a correlation of the electrical data with the manufacturing data.

公开(公告)号：US07117062B1

公开(公告)日：2006-10-03

申请号：US10323553

申请日：2002-12-18

申请人： Thomas J. Sonderman ,  Robert J. Chong ,  Brian K. Cusson ,  Alexander J. Pasadyn

发明人： Thomas J. Sonderman ,  Robert J. Chong ,  Brian K. Cusson ,  Alexander J. Pasadyn

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G01N21/9501 ,  G05B2219/31442 ,  G05B2219/32197 ,  Y02P90/22

摘要： A method and an apparatus for characterizing an uncertainty factor relating to processing workpieces. A first processing step is performed upon a workpiece. A first uncertainty factor associated with the first processing step is calculated. A final uncertainty factor associated with an end-of-line parameter relating to the workpiece is calculated based upon the first uncertainty factor. A process control function based upon the final uncertainty factor is performed.

摘要翻译： 一种表征与处理工件有关的不确定因素的方法和装置。 对工件进行第一处理步骤。 计算与第一处理步骤相关联的第一不确定因素。 基于第一不确定因素计算与与工件相关的行尾参数相关联的最终不确定性因子。 执行基于最终不确定因素的过程控制功能。

公开(公告)号：US06925347B1

公开(公告)日：2005-08-02

申请号：US10223174

申请日：2002-08-19

申请人： Michael L. Miller ,  Thomas J. Sonderman ,  Alexander J. Pasadyn ,  Richard J. Markle ,  Brian K. Cusson ,  Patrick M. Cowan ,  Timothy L. Jackson ,  Naomi M. Jenkins

发明人： Michael L. Miller ,  Thomas J. Sonderman ,  Alexander J. Pasadyn ,  Richard J. Markle ,  Brian K. Cusson ,  Patrick M. Cowan ,  Timothy L. Jackson ,  Naomi M. Jenkins

IPC分类号： G05B19/418 ,  G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/45031 ,  Y02P90/22

摘要： A method and apparatus is provided for a process control based on an estimated process result. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and estimating at least one process result of the workpiece based on at least a portion of the received trace data. The method further comprises adjusting processing of a next workpiece based on the estimated at least one process result.

摘要翻译： 基于估计的处理结果提供了用于过程控制的方法和装置。 该方法包括使用处理工具处理工件，从处理工具接收与工件的处理相关联的跟踪数据，并基于所接收的跟踪数据的至少一部分估计工件的至少一个处理结果。 该方法还包括基于估计的至少一个处理结果来调整下一个工件的处理。

公开(公告)号：US06678570B1

公开(公告)日：2004-01-13

申请号：US09891898

申请日：2001-06-26

申请人： Alexander J. Pasadyn ,  Thomas J. Sonderman

发明人： Alexander J. Pasadyn ,  Thomas J. Sonderman

IPC分类号： G06F1900

CPC分类号： G05B19/41865 ,  Y02P90/20 ,  Y10T29/41

摘要： A method for determining output characteristics of a workpiece includes generating a tool state trace related to the processing of a workpiece in a tool; comparing the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric; selecting a reference tool state trace closest to the generated tool state trace; and determining an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace. A manufacturing system includes a tool and a tool state monitor. The tool is adapted to process a workpiece. The tool state monitor is adapted to generate a tool state trace related to the processing of a workpiece in the tool, compare the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric, select a reference tool state trace closest to the generated tool state trace, and determine an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace.

摘要翻译： 一种用于确定工件的输出特性的方法包括产生与工具中的工件的加工相关的工具状态迹线; 将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较，每个参考刀具状态轨迹具有输出特征量度; 选择最接近生成的刀具状态轨迹的参考刀具状态轨迹; 以及基于与所选择的参考工具状态轨迹相关联的输出特性度量来确定工件的输出特性。 制造系统包括工具和工具状态监视器。 该工具适用于加工工件。 刀具状态监视器适于生成与刀具中的工件的处理相关的刀具状态跟踪，将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较，每个刀具状态轨迹具有输出特性量度，选择 最接近生成的刀具状态轨迹的参考刀具状态轨迹，并且基于与所选择的参考刀具状态轨迹相关联的输出特性量度来确定工件的输出特性。

公开(公告)号：US06660539B1

公开(公告)日：2003-12-09

申请号：US10040299

申请日：2001-11-07

申请人： Thomas J. Sonderman ,  Alexander J. Pasadyn

发明人： Thomas J. Sonderman ,  Alexander J. Pasadyn

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/31138

摘要： A method comprising performing an etch process recipe comprised of an endpoint etch process and a timed over-etch process on each of a first plurality of substrates to form at least one opening in each layer of insulating material, determining a duration of the endpoint etch process performed on the first plurality of substrates, determining a duration of the timed over-etch process of the etch process recipe to be performed on a second plurality of substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates, and performing the etch process recipe comprised of the endpoint etch process and the timed over-etch process of the determined duration on the second plurality of semiconducting substrates. A system comprised of an etch tool for forming at least one opening in a layer of insulating material formed above each of a first plurality of semiconducting substrates by performing an etch recipe comprised of an endpoint etch process and a timed over-etch process on each of the substrates, and a controller that determines a duration of the endpoint etch process performed on the first plurality of substrates and determines a duration of the timed over-etch process of the etch recipe to be performed on a second plurality of semiconducting substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates.

摘要翻译： 一种方法，包括在第一多个基板中的每一个上执行包括端点蚀刻工艺和定时过蚀刻工艺的蚀刻工艺配方，以在每层绝缘材料中形成至少一个开口，确定端点蚀刻工艺的持续时间 在所述第一多个基板上执行，基于在所述第一多个基板上执行的所述端点蚀刻工艺的所确定的持续时间，确定将在第二多个基板上执行的所述蚀刻工艺配方的定时过蚀刻工艺的持续时间， 以及执行包括端点蚀刻工艺和在第二多个半导体衬底上确定的持续时间的定时过蚀刻工艺的蚀刻工艺配方。 一种系统，包括用于在绝缘材料层中形成至少一个开口的蚀刻工具，所述绝缘材料层通过执行由端点蚀刻工艺和定时过蚀刻工艺组成的蚀刻配方，所述蚀刻配方由第一多个半导体衬底 基板和控制器，其确定在第一多个基板上执行的端点蚀刻工艺的持续时间，并且基于第二多个半导体基板确定要对第二多个半导体基板执行的蚀刻配方的定时过蚀刻工艺的持续时间 确定在第一多个基板上执行的端点蚀刻工艺的持续时间。

公开(公告)号：US06444481B1

公开(公告)日：2002-09-03

申请号：US09897626

申请日：2001-07-02

申请人： Alexander J. Pasadyn ,  Thomas J. Sonderman

发明人： Alexander J. Pasadyn ,  Thomas J. Sonderman

IPC分类号： H01L2100

CPC分类号： H01L22/26 ,  H01L21/2885 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for controlling a plating process includes plating a process layer on a wafer in accordance with a recipe; measuring a thickness of the process layer; and determining at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness. A processing line includes a plating tool, a metrology tool, and a process controller. The plating tool is adapted to form a process layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a thickness of the process layer. The process controller is adapted to determine at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness.

摘要翻译： 一种控制电镀工艺的方法包括根据配方在晶片上镀覆工艺层; 测量处理层的厚度; 以及基于测量的厚度，确定随后形成的处理层的配方的至少一个电镀参数。 处理线包括电镀工具，计量工具和过程控制器。 电镀工具适于根据配方在晶片上形成工艺层。 测量工具适用于测量工艺层的厚度。 过程控制器适于基于测量的厚度来确定随后形成的处理层的配方的至少一个电镀参数。

公开(公告)号：US06978189B1

公开(公告)日：2005-12-20

申请号：US10156450

申请日：2002-05-28

申请人： Christopher A. Bode ,  Matthew A. Purdy ,  Alexander J. Pasadyn

发明人： Christopher A. Bode ,  Matthew A. Purdy ,  Alexander J. Pasadyn

IPC分类号： G06F19/00 ,  H01L21/00

CPC分类号： H01L21/67288 ,  H01L21/67253

摘要： A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.

摘要翻译： 一种用于匹配与综合计量工具相关的数据的方法和装置以及独立计量工具。 至少一个半导体晶片被处理。 基于与由综合计量工具获得的经处理的半导体晶片相关的度量数据与使用控制器由独立计量工具获取的度量数据之间的差异进行匹配的综合计量工具和/或独立计量工具。

公开(公告)号：US06788988B1

公开(公告)日：2004-09-07

申请号：US10023098

申请日：2001-12-17

申请人： Alexander J. Pasadyn ,  Christopher A. Bode

发明人： Alexander J. Pasadyn ,  Christopher A. Bode

IPC分类号： G06F1900

CPC分类号： G05B15/02 ,  H01L22/20 ,  H01L2223/54453

摘要： A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.

摘要翻译： 一种用于获取预处理和后处理综合度量数据的方法和装置。 提供了许多半导体晶片。 执行在许多半导体晶片内的第一半导体晶片的预处理集成度量数据采集。 在从多个半导体晶片的第二半导体晶片获取预处理测量数据的过程中，至少部分地执行在第一半导体晶片上的处理操作。 响应于第一半导体晶片的处理，从第一半导体晶片获取后处理集成度量数据。 分析预处理和后处理计量数据以评估在第一半导体晶片上执行的处理操作。

公开(公告)号：US06778873B1

公开(公告)日：2004-08-17

申请号：US10210640

申请日：2002-07-31

申请人： Jin Wang ,  Elfido Coss, Jr. ,  Brian K. Cusson ,  Alexander J. Pasadyn ,  Michael L. Miller ,  Naomi M. Jenkins ,  Christopher A. Bode

发明人： Jin Wang ,  Elfido Coss, Jr. ,  Brian K. Cusson ,  Alexander J. Pasadyn ,  Michael L. Miller ,  Naomi M. Jenkins ,  Christopher A. Bode

IPC分类号： G06F1900

CPC分类号： G05B19/4184 ,  G05B23/0281 ,  G05B2219/31357 ,  G05B2219/31363 ,  G05B2219/32201 ,  Y02P90/14 ,  Y02P90/22

摘要： A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller. The method further includes generating prediction data associated with processing of the next workpieces, and comparing the prediction data to processing data associated with the processing of the next workpieces to identify a possible cause of the fault.

摘要翻译： 提供了一种基于控制器输出来识别故障原因的方法和装置。 该方法包括在控制器的方向上处理至少一个工件，并检测与至少一个工件的处理相关的故障。 该方法还包括确定检测到的故障的多个可能的原因，从多个可能的原因中识别更可能的可能原因，将与所识别的更可能的可能原因相关联的故障信息提供给控制器。 该方法还包括向控制器提供与所识别的更可能的可能原因相关联的故障信息。 该方法还包括基于提供给控制器的故障信息来调整接下来要处理的一个或多个待处理工件的处理。 该方法还包括生成与下一个工件的处理相关联的预测数据，以及将预测数据与与下一个工件的处理相关联的处理数据进行比较，以识别故障的可能原因。

公开(公告)号：US06756243B2

公开(公告)日：2004-06-29

申请号：US10020551

申请日：2001-10-30

申请人： Alexander J. Pasadyn ,  Christopher A. Bode

发明人： Alexander J. Pasadyn ,  Christopher A. Bode

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  H01L2223/54453 ,  Y10T29/41

摘要： A method and an apparatus for performing cascade control of processing of semiconductor wafers. A first semiconductor wafer for processing is received. A second semiconductor wafer for processing is received. A cascade processing operation upon the first and the second semiconductor wafers is performed, wherein the cascade processing operation comprises acquiring pre-process metrology data related to the second semiconductor wafer during at least a portion of a time period wherein the first semiconductor wafer is being processed.

摘要翻译： 一种用于对半导体晶片的处理进行级联控制的方法和装置。 接收用于处理的第一半导体晶片。 接收用于处理的第二半导体晶片。 执行在第一和第二半导体晶片上的级联处理操作，其中级联处理操作包括在其中正在处理第一半导体晶片的时间段的至少一部分期间获取与第二半导体晶片相关的预处理测量数据 。