公开(公告)号：US20120120396A1

公开(公告)日：2012-05-17

申请号：US13386524

申请日：2010-07-21

申请人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

发明人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

IPC分类号： G01B11/00

CPC分类号： G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

摘要： A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

摘要翻译： 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

公开(公告)号：US08004679B2

公开(公告)日：2011-08-23

申请号：US12395883

申请日：2009-03-02

申请人： Vladimir Levinski ,  Daniel Kandel

发明人： Vladimir Levinski ,  Daniel Kandel

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined offsets, and each predefined offset of each cell is selected to cause one or more terms to be cancelled from a periodic function that represents radiation scattered and measured from each cell. The scattered radiation of each cell is represented with a periodic function having a plurality of unknowns parameters, including an unknown overlay error, and the unknown overlay error is determined based on the plurality of periodic functions for the plurality of cells.

摘要翻译： 公开了用于确定覆盖误差的方法和装置。 测量从靶的多个细胞中的每一个散射的辐射。 每个单元包括由第一工艺形成的至少第一光栅结构和通过第二工艺形成的第二光栅结构，并且其中每个单元在每个单元的第一和第二光栅结构之间具有预定义的偏移。 不同单元的第一和第二光栅结构具有不同的预定偏移量，并且选择每个单元的每个预定的偏移量以使一个或多个项从表示从每个单元散射并测量的辐射的周期函数中消除。 每个单元的散射辐射由具有多个未知参数的周期函数表示，包括未知覆盖误差，并且基于多个单元的多个周期函数来确定未知叠加误差。

公开(公告)号：US20090279091A1

公开(公告)日：2009-11-12

申请号：US12395883

申请日：2009-03-02

申请人： Vladimir Levinski ,  Daniel Kandel

发明人： Vladimir Levinski ,  Daniel Kandel

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined offsets, and each predefined offset of each cell is selected to cause one or more terms to be cancelled from a periodic function that represents radiation scattered and measured from each cell. The scattered radiation of each cell is represented with a periodic function having a plurality of unknowns parameters, including an unknown overlay error, and the unknown overlay error is determined based on the plurality of periodic functions for the plurality of cells.

摘要翻译： 公开了用于确定覆盖误差的方法和装置。 测量从靶的多个细胞中的每一个散射的辐射。 每个单元包括由第一工艺形成的至少第一光栅结构和通过第二工艺形成的第二光栅结构，并且其中每个单元在每个单元的第一和第二光栅结构之间具有预定义的偏移。 不同单元的第一和第二光栅结构具有不同的预定偏移量，并且选择每个单元的每个预定的偏移量以使一个或多个项从表示从每个单元散射并测量的辐射的周期函数中消除。 每个单元的散射辐射由具有多个未知参数的周期函数表示，包括未知覆盖误差，并且基于多个单元的多个周期函数来确定未知叠加误差。

公开(公告)号：US20120033215A1

公开(公告)日：2012-02-09

申请号：US13186144

申请日：2011-07-19

申请人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

发明人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC分类号： G01B11/06 ,  G01J4/00

CPC分类号： G03F7/70633 ,  G03F7/70683

摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

摘要翻译： 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为在目标结构对准时共享公共对称中心，每个目标结构 目标结构相对于公共对称中心不变为N度旋转，其中N等于或大于180度，其中两个或更多个图案元素中的每一个具有单独的对称中心，其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的，其中M等于或大于180度。

公开(公告)号：US07526749B2

公开(公告)日：2009-04-28

申请号：US11329716

申请日：2006-01-10

申请人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

发明人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

IPC分类号： G06F17/50

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

摘要翻译： 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：US07433039B1

公开(公告)日：2008-10-07

申请号：US10913188

申请日：2004-08-06

申请人： Vladimir Levinski ,  Ilan Sela

发明人： Vladimir Levinski ,  Ilan Sela

IPC分类号： G01B11/00

CPC分类号： G03F7/70633 ,  G03F7/70616

摘要： Disclosed are apparatus and methods for determining a minimum tool-induced shift (TIS) during an overlay metrology procedure. In a specific embodiment, a method of determining overlay or misalignment error on a target is disclosed. For a predefined number of positions of a target within a field of view (FOV) of a metrology tool, the following operations are performed: (i) determining a tool-induced shift (TIS) parameter value for each predefined position of the target within the FOV based on at least one overlay measurement obtained from the target at the each position (for example, based on overlay measurements at 0 and 180 degrees of wafer orientation) and (ii) determining a minimum TIS parameter value and its corresponding FOV position from the plurality of determined TIS parameters values at the predefined positions of the target within the FOV. The FOV position that corresponds to the minimum TIS is then defined as an appropriate position for the actual overlay measurement and the value of minimum TIS is used for overlay correction.

摘要翻译： 公开了用于在覆盖计量过程期间确定最小工具引起的移动（TIS）的装置和方法。 在具体实施例中，公开了一种确定目标上的重叠或未对准误差的方法。 对于计量工具的视场（FOV）中的目标的预定数量的位置，执行以下操作：（i）确定目标的每个预定义位置的工具引起的移动（TIS）参数值， 基于从每个位置处的目标获得的至少一个覆盖测量的FOV（例如，基于在0和180度晶片取向的覆盖测量），以及（ii）确定最小TIS参数值及其对应的FOV位置 在FOV内的目标的预定义位置处的多个确定的TIS参数值。 然后将对应于最小TIS的FOV位置定义为实际覆盖测量的适当位置，并且将最小TIS的值用于覆盖校正。

公开(公告)号：US07310789B2

公开(公告)日：2007-12-18

申请号：US11510147

申请日：2006-08-24

申请人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

发明人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

IPC分类号： G06F17/50

CPC分类号： G03F7/705 ,  G03F7/70516 ,  G03F7/70633

摘要： Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or “target diagnostics” from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.

摘要翻译： 公开了用于从一个或多个半导体覆盖目标获取和分析各种独特度量或“目标诊断”的装置和方法。 在一个实施例中，测量覆盖目标以获得两种特定类型的目标诊断信息，系统误差度量和/或随机噪声度量中的一种或两种。 系统误差度量通常量化覆盖目标的不对称性，而随机噪声度量量化和/或限定与覆盖目标邻近或相关联的空间噪声。

公开(公告)号：US07111256B2

公开(公告)日：2006-09-19

申请号：US10438963

申请日：2003-05-14

申请人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

发明人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

IPC分类号： G06F17/50

CPC分类号： G03F7/705 ,  G03F7/70516 ,  G03F7/70633

摘要： Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

摘要翻译： 公开了分析覆盖目标质量的方法和装置。 在一个实施例中，公开了一种从覆盖目标提取数据的方法。 首先，提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。 在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

公开(公告)号：US08345243B2

公开(公告)日：2013-01-01

申请号：US12717430

申请日：2010-03-04

申请人： Mark Ghinovker ,  Vladimir Levinski

发明人： Mark Ghinovker ,  Vladimir Levinski

IPC分类号： G01B11/00 ,  H01L21/76 ,  H01L23/544 ,  G06K9/00

CPC分类号： G03F7/70633

摘要： In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay.

摘要翻译： 在一个实施例中，用于确定衬底的两个或更多个连续层之间的相对位移的度量目标可以包括： 衬底的第一层上的第一结构和位于衬底的第一层的连续层上的第二结构，布置成通过分析第一结构和第二结构来确定衬底的x和y方向上的对准位移 覆盖。

公开(公告)号：US20110228263A1

公开(公告)日：2011-09-22

申请号：US13073986

申请日：2011-03-28

申请人： Yung-Ho (Alex) Chuang ,  Vladimir Levinski ,  Xuefeng Liu ,  John Fielden

发明人： Yung-Ho (Alex) Chuang ,  Vladimir Levinski ,  Xuefeng Liu ,  John Fielden

IPC分类号： G01J3/00

CPC分类号： G01N21/9501 ,  G01N2021/479

摘要： Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided.

摘要翻译： 提供了计量或检查系统的照明子系统，计量系统，检查系统和用于计量测量或检查的照明样本的方法。