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    Methods and apparatus for designing and using micro-targets in overlay metrology
    1.
    发明授权
    Methods and apparatus for designing and using micro-targets in overlay metrology 有权
    在重叠计量中设计和使用微观目标的方法和设备

    公开(公告)号：US07526749B2

    公开(公告)日：2009-04-28

    申请号：US11329716

    申请日：2006-01-10

    申请人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

    发明人： Vladimir Levinski ,  Michael E. Adel ,  Aviv Frommer ,  Daniel Kandel

    IPC分类号： G06F17/50

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

    摘要翻译： 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

    Target acquisition and overlay metrology based on two diffracted orders imaging
    2.
    发明授权
    Target acquisition and overlay metrology based on two diffracted orders imaging 有权
    基于两个衍射成像的目标获取和覆盖计量

    公开(公告)号：US07528953B2

    公开(公告)日：2009-05-05

    申请号：US11363755

    申请日：2006-02-27

    申请人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

    发明人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

    IPC分类号： G01B11/00 ,  G06K9/00

    CPC分类号： G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

    摘要： In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.

    摘要翻译： 在一个实施例中，系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标的光束发生器。 响应于至少一个入射光束，多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。

    Order selected overlay metrology
    3.
    发明授权
    Order selected overlay metrology 有权
    订购选择重叠计量

    公开(公告)号：US07528941B2

    公开(公告)日：2009-05-05

    申请号：US11754892

    申请日：2007-05-29

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

    IPC分类号： G01N21/00

    CPC分类号： G03F7/70633

    摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

    摘要翻译： 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

    Use of overlay diagnostics for enhanced automatic process control
    6.
    发明授权
    Use of overlay diagnostics for enhanced automatic process control 有权
    使用覆盖诊断功能进行增强的自动过程控制

    公开(公告)号：US07111256B2

    公开(公告)日：2006-09-19

    申请号：US10438963

    申请日：2003-05-14

    申请人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

    发明人： Joel L. Seligson ,  Mark Ghinovker ,  John Robinson ,  Pavel Izikson ,  Michael E. Adel ,  Boris Simkin ,  David Tulipman ,  Vladimir Levinski

    IPC分类号： G06F17/50

    CPC分类号： G03F7/705 ,  G03F7/70516 ,  G03F7/70633

    摘要： Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

    摘要翻译： 公开了分析覆盖目标质量的方法和装置。 在一个实施例中，公开了一种从覆盖目标提取数据的方法。 首先，提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。 在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

    System method and structure for determining focus accuracy
    8.
    发明授权
    System method and structure for determining focus accuracy 失效
    确定焦点精度的系统方法和结构

    公开(公告)号：US07352451B2

    公开(公告)日：2008-04-01

    申请号：US11032126

    申请日：2005-01-11

    申请人： Vladimir Levinski ,  Michael E. Adel

    发明人： Vladimir Levinski ,  Michael E. Adel

    IPC分类号： G01J1/00 ,  G01B9/00

    CPC分类号： G03F7/70641 ,  G03F1/44

    摘要： Within a lithography process having a critical dimension, a method, system and structure for determining a focus deviation value relative to an ideal focus position said is disclosed. By projecting a series of lines or spots characterized by the constant pitch size which is greater than the projection devise optical resolution and incrementally increasing widths onto the surface of the photoactive material, wherein the width of at least one of the lines or sports is substantially the same as the critical dimension, and the widths of the other lines or spots are substantially equally distributed around the critical dimension, approximate focus and exposure dose deviation values may be determined.

    摘要翻译： 在具有临界尺寸的光刻工艺中，公开了一种用于确定相对于理想聚焦位置的聚焦偏差值的方法，系统和结构。 通过投射一系列具有恒定间距尺寸的线或点，其大于投射光学分辨率并逐渐增加到光活性材料表面上的宽度，其中至少一条线或运动的宽度基本上是 与临界尺寸相同，并且其他线或点的宽度在临界尺寸周围基本均匀分布，可以确定近似焦点和曝光剂量偏差值。

    Optical system
    9.
    发明授权
    Optical system 有权
    光学系统

    公开(公告)号：US08456641B1

    公开(公告)日：2013-06-04

    申请号：US13303296

    申请日：2011-11-23

    申请人： Vladimir Levinski ,  Noah Bareket ,  Michael E. Adel

    发明人： Vladimir Levinski ,  Noah Bareket ,  Michael E. Adel

    IPC分类号： G01N21/55

    CPC分类号： G01N21/55 ,  G01N21/4788

    摘要： An optical system including a light source, optics for directing illumination, thereby producing reflected light, optics for receiving the reflected light, a splitter disposed at a pupil plane for receiving the reflected light and splitting it into a first and second portion, first imaging optics for receiving the first portion and directing it to a first sensor to produce a first image portion, the first sensor delivering the first image portion to a processor, second imaging optics for receiving the second portion and directing it to a second sensor to produce a second image portion, the second sensor delivering the second image portion to the processor, and the processor for combining the first image portion and the second image portion into a single image of the sample.

    摘要翻译： 一种光学系统，包括光源，用于引导照明的光学器件，从而产生反射光，用于接收反射光的光学器件;设置在光瞳平面处用于接收反射光并将其分裂成第一和第二部分的分光器;第一成像光学器件 用于接收第一部分并将其引导到第一传感器以产生第一图像部分，第一传感器将第一图像部分传送到处理器，第二成像光学器件用于接收第二部分并将其引导到第二传感器以产生第二图像部分 图像部分，将第二图像部分传送到处理器的第二传感器，以及用于将第一图像部分和第二图像部分组合成样本的单个图像的处理器。

    Cross hatched metrology marks and associated method of use
    10.
    发明授权
    Cross hatched metrology marks and associated method of use 有权
    交叉阴影计量标记和相关使用方法

    公开(公告)号：US07671990B1

    公开(公告)日：2010-03-02

    申请号：US11759183

    申请日：2007-06-06

    申请人： Michael E. Adel ,  Vladimir Levinski ,  Elyakim Kassel

    发明人： Michael E. Adel ,  Vladimir Levinski ,  Elyakim Kassel

    IPC分类号： G01B11/00

    CPC分类号： G03F7/70633 ,  G03F7/70683

    摘要： The present invention is directed to novel metrology marks and methods for their use. The marks comprise cross hashed overlay metrology marks formed on a substrate including a plurality of target regions. The mark including a first grating structure formed in one layer of a target region and including a second grating structure formed in another layer of the target region. The periodic features of the first and second grating structures are oriented substantially orthogonal one another to form a cross-hatched metrology target in the target region. Additionally, the patent discloses methods of employing the metrology marks to obtain overlay metrology measurements.

    摘要翻译： 本发明涉及新颖的计量标记及其使用方法。 标记包括形成在包括多个目标区域的基板上的交叉散列叠加计量标记。 该标记包括形成在目标区域的一个层中并包括形成在目标区域的另一层中的第二光栅结构的第一光栅结构。 第一和第二光栅结构的周期特征被定向为基本上彼此正交，以在目标区域中形成交叉阴影的计量目标。 此外，该专利公开了使用计量标记来获得覆盖度量测量的方法。