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    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
    2.
    发明授权
    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems 有权

    公开(公告)号：US09927718B2

    公开(公告)日：2018-03-27

    申请号：US13186144

    申请日：2011-07-19

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    IPC分类号： G01J4/00 ,  G03F7/20

    CPC分类号： G03F7/70633 ,  G03F7/70683

    摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
    提供改进过程控制质量标准的方法和系统

    公开(公告)号：US20130035888A1

    公开(公告)日：2013-02-07

    申请号：US13508495

    申请日：2012-04-04

    申请人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

    发明人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

    IPC分类号： G01N37/00 ,  G06F19/00

    摘要： The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

    摘要翻译： 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布来生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    4.
    发明申请
    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS 有权
    多层叠加计量目标和综合覆盖度量度测量系统

    公开(公告)号：US20120033215A1

    公开(公告)日：2012-02-09

    申请号：US13186144

    申请日：2011-07-19

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    IPC分类号： G01B11/06 ,  G01J4/00

    CPC分类号： G03F7/70633 ,  G03F7/70683

    摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

    摘要翻译： 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为在目标结构对准时共享公共对称中心，每个目标结构 目标结构相对于公共对称中心不变为N度旋转，其中N等于或大于180度，其中两个或更多个图案元素中的每一个具有单独的对称中心，其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的，其中M等于或大于180度。

    ORDER SELECTED OVERLAY METROLOGY
    5.
    发明申请
    ORDER SELECTED OVERLAY METROLOGY 有权
    订单选择重叠度量

    公开(公告)号：US20070279630A1

    公开(公告)日：2007-12-06

    申请号：US11754892

    申请日：2007-05-29

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

    IPC分类号： G01B11/00

    CPC分类号： G03F7/70633

    摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

    摘要翻译： 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

    Angle-resolved antisymmetric scatterometry
    6.
    发明授权
    Angle-resolved antisymmetric scatterometry 有权
    角分辨反对称散射法

    公开(公告)号：US08848186B2

    公开(公告)日：2014-09-30

    申请号：US13386524

    申请日：2010-07-21

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    IPC分类号： G01B11/00 ,  G01J4/00 ,  G03F7/20 ,  G01B11/24 ,  G01N21/956

    CPC分类号： G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

    摘要： A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    摘要翻译： 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS
    7.
    发明申请
    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS 有权
    通过相位分析的覆盖度量

    公开(公告)号：US20130044331A1

    公开(公告)日：2013-02-21

    申请号：US13209778

    申请日：2011-08-15

    申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    IPC分类号： G01B11/14 ,  G01B11/26

    CPC分类号： G03F7/70633

    摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    Optical gain approach for enhancement of overlay and alignment systems performance
    9.
    发明授权
    Optical gain approach for enhancement of overlay and alignment systems performance 失效
    用于增强覆盖和对准系统性能的光增益方法

    公开(公告)号：US07602491B2

    公开(公告)日：2009-10-13

    申请号：US12108364

    申请日：2008-04-23

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

    IPC分类号： G01B11/00 ,  G01B11/02 ,  G06K9/00

    CPC分类号： G01B11/272 ,  G03F7/70633

    摘要： A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern.

    摘要翻译： 可以通过将目标图像划分成第一和第二部分并光学地修改第一和/或第二部分使得由其组合形成的最终图像由莫尔图案表征来获得光栅目标的合成图像。 可以分析所得到的图像以确定光栅目标从莫尔图案的偏移中的偏移。 光学对准装置可以包括第一分束器，光耦合到第一分束器的图像变换元件和第二分束器。 第一分束器将光栅靶的图像分成第一和第二部分。 第二分束器组合第一部分和第二部分。 图像变换元件光学地修改第一和/或第二部分，使得由它们的组合形成的最终图像的特征在于莫尔图案。

    Order selected overlay metrology
    10.
    发明授权
    Order selected overlay metrology 有权
    订购选择重叠计量

    公开(公告)号：US07528941B2

    公开(公告)日：2009-05-05

    申请号：US11754892

    申请日：2007-05-29

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

    IPC分类号： G01N21/00

    CPC分类号： G03F7/70633

    摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

    摘要翻译： 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。