公开(公告)号：US20110220919A1

公开(公告)日：2011-09-15

申请号：US12875507

申请日：2010-09-03

申请人： Aoi OKADA ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

发明人： Aoi OKADA ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

IPC分类号： H01L33/16 ,  C09K11/08 ,  H01L33/40

CPC分类号： C09K11/7734 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.

摘要翻译： 本实施例提供了制造氮氧化物荧光物质的方法。 在该方法中采用含有In或Ga的化合物作为其材料。 通过该方法生产的红色荧光物质可以与半导体发光元件组合，以便用于发光器件或发光模块中。

公开(公告)号：US20090321771A1

公开(公告)日：2009-12-31

申请号：US12493585

申请日：2009-06-29

申请人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

发明人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

IPC分类号： H01L33/00

CPC分类号： H01S5/02292 ,  G02F1/353 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

摘要翻译： 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。

公开(公告)号：US08124995B2

公开(公告)日：2012-02-28

申请号：US12493585

申请日：2009-06-29

申请人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

发明人： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

IPC分类号： H01L33/00

CPC分类号： H01S5/02292 ,  G02F1/353 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

摘要翻译： 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。

公开(公告)号：US20130241395A1

公开(公告)日：2013-09-19

申请号：US13609891

申请日：2012-09-11

申请人： Naotoshi Matsuda ,  Yumi Fukuda ,  Keiko Albessard ,  Masahiro Kato ,  Iwao Mitsuishi

发明人： Naotoshi Matsuda ,  Yumi Fukuda ,  Keiko Albessard ,  Masahiro Kato ,  Iwao Mitsuishi

IPC分类号： C09K11/77 ,  H05B33/14

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/14 ,  H01L2924/00014

摘要： The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe   (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0

摘要翻译： 本实施方式提供铕活化氮氧化物荧光体及其制造方法。 该荧光体发射在630nm以上具有峰值的红色发光，并且可以通过使用廉价的氧化物作为含有碱土金属如锶的原料来生产。 氧氮化铟荧光体由二价铕活化并由式（1）表示：（M1-xEux）AlaSibOcNdCe（1）。 在该式中，M是碱土金属，x，a，b，c，d和e是满足条件0

公开(公告)号：US20130234591A1

公开(公告)日：2013-09-12

申请号：US13677675

申请日：2012-11-15

申请人： Yasushi Hattori ,  Naotoshi Matsuda ,  Kunio Ishida ,  Aoi Okada ,  Ryosuke Hiramatsu ,  Masahiro Kato ,  Iwao Mitsuishi

发明人： Yasushi Hattori ,  Naotoshi Matsuda ,  Kunio Ishida ,  Aoi Okada ,  Ryosuke Hiramatsu ,  Masahiro Kato ,  Iwao Mitsuishi

IPC分类号： H05B33/12 ,  H05B33/04

CPC分类号： H05B33/12 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/48091 ,  H05B33/04 ,  H01L2924/00014

摘要： A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.

摘要翻译： 实施方式的白色发光装置包括：发光元件，具有波长范围为430〜470nm的波长的发光元件，形成在发光元件上方的第一荧光体，发光元件的第一峰值波长 530〜580nm，具有第一半宽度，以及形成在发光元件上的第二荧光材料，并且发射具有比第一峰值波长长的第二峰值波长的光，并且其范围为570-620nm，包括 并且具有100nm或更小的第二半宽度并且等于或小于第一半宽度。

公开(公告)号：US09187693B2

公开(公告)日：2015-11-17

申请号：US13609891

申请日：2012-09-11

申请人： Naotoshi Matsuda ,  Yumi Fukuda ,  Keiko Albessard ,  Masahiro Kato ,  Iwao Mitsuishi

发明人： Naotoshi Matsuda ,  Yumi Fukuda ,  Keiko Albessard ,  Masahiro Kato ,  Iwao Mitsuishi

IPC分类号： C09K11/77 ,  C09K11/08 ,  H05B33/14 ,  H01L33/50

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/14 ,  H01L2924/00014

摘要： The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe  (1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0

摘要翻译： 本实施方式提供铕活化氮氧化物荧光体及其制造方法。 该荧光体发射在630nm以上具有峰值的红色发光，并且可以通过使用廉价的氧化物作为含有碱土金属如锶的原料来生产。 氧氮化铟荧光体由二价铕活化并由式（1）表示：（M1-xEux）AlaSibOcNdCe（1）。 在该式中，M是碱土金属，x，a，b，c，d和e是满足条件0

公开(公告)号：US20130069098A1

公开(公告)日：2013-03-21

申请号：US13677828

申请日：2012-11-15

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/50

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

摘要翻译： 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。

公开(公告)号：US08368104B2

公开(公告)日：2013-02-05

申请号：US12874413

申请日：2010-09-02

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

公开(公告)号：US08071995B2

公开(公告)日：2011-12-06

申请号：US12719484

申请日：2010-03-08

申请人： Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.

摘要翻译： 一种发光器件，包括：发光源的光源; 第一波长转换部分，用于吸收源光并发射具有不同于源光波长的波长的第一光; 光传输部分，设置在与光源相反的第一波长转换部分的相对侧并且被配置为透射源光和第一光; 以及第二波长转换部，其设置在所述透光部的与所述第一波长转换部的相反侧，并且被配置为吸收所述源光和所述第一光中的至少一个，以发射具有与所述第二波长的波长不同的波长的第二光 源光并且也不同于第一光的波长。 源光的一部分被配置为被带到发光器件的外部，而不通过第一波长转换部分和第二波长转换部分中的至少一个。

公开(公告)号：US07884538B2

公开(公告)日：2011-02-08

申请号：US12143382

申请日：2008-06-20

申请人： Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori

发明人： Iwao Mitsuishi ,  Shinya Nunoue ,  Yasushi Hattori

IPC分类号： H01J1/62

CPC分类号： H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

摘要： A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

摘要翻译： 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。