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公开(公告)号:US20210159363A1
公开(公告)日:2021-05-27
申请号:US16824062
申请日:2020-03-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Sheng XU , Huili WU , Lizhen ZHANG , Wei HE , Xuefei ZHAO , Shipei LI , Fang HE , Dongsheng YIN , Renquan GU , Wusheng LI , Qi YAO
IPC: H01L33/38 , H01L33/24 , H01L25/075
Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.
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公开(公告)号:US20210158007A1
公开(公告)日:2021-05-27
申请号:US17041516
申请日:2020-04-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shipei LI , Ying ZHAO , Renquan GU , Wei HE , Huili WU , Dongsheng YIN , Sheng XU , Lizhen ZHANG , Xuefei ZHAO , Fang HE , Yupeng GAO
IPC: G06K9/00 , H01L27/146
Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
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公开(公告)号:US20210036074A1
公开(公告)日:2021-02-04
申请号:US16897624
申请日:2020-06-10
Applicant: BOE Technology Group Co., Ltd.
Inventor: Jingkai NI , Xiaofen WANG , Xiang ZHOU , Huili WU
Abstract: Embodiments of the present disclosure provided a display panel and a display device. The display panel includes a plurality of pixel defining units, each of the plurality of pixel defining units has a pixel hole for arranging a sub-pixel, and a first guide groove section connecting to the pixel hole, and the first guide groove sections corresponding to two adjacent pixel defining units are connected to each other to form a first guide groove.
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24.
公开(公告)号:US20200273393A1
公开(公告)日:2020-08-27
申请号:US16872412
申请日:2020-05-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Dongsheng LI , Jianming SUN , Huili WU , Shipei LI , Qingrong REN
Abstract: A display substrate, a display panel, and a display device. The display substrate includes a substrate, and a plurality of polygonal pixels arranged in an array on the substrate. Each polygonal pixel includes a plurality of sub-pixels and a photoelectric sensor. An orthographic projection of the plurality of sub-pixels on the substrate and an orthogonal projection of the photoelectric sensor on the substrate do not overlap with each other. The display substrate, the display panel and the display device of the embodiments of the present disclosure can maximize the collection of optical signals, thereby improving the efficiency of the photoelectric sensor and the accuracy of a fingerprint identification in certain applications.
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25.
公开(公告)号:US20190044007A1
公开(公告)日:2019-02-07
申请号:US15767605
申请日:2017-09-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jianming SUN , Rui HUANG , Huili WU
IPC: H01L31/0224 , G06K9/00 , H01L31/18 , H01L31/101 , H01L31/105
CPC classification number: H01L31/022483 , G06K9/0004 , H01L27/1443 , H01L27/1446 , H01L29/786 , H01L31/1013 , H01L31/1016 , H01L31/105 , H01L31/1884
Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.
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