Methods for forming thin film transistors on a glass substrate and liquid crystal displays formed therefrom

    公开(公告)号:US12013619B2

    公开(公告)日:2024-06-18

    申请号:US17040073

    申请日:2019-03-26

    CPC classification number: G02F1/1368 H01L29/78681 G02F1/13685

    Abstract: A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.

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