公开(公告)号：US08114306B2

公开(公告)日：2012-02-14

申请号：US12470760

申请日：2009-05-22

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

IPC分类号： H01L21/31 ,  H01L21/469 ,  B32B3/00 ,  B05D3/00

CPC分类号： H01L21/76816 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10S438/947

摘要： Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.

摘要翻译： 本文描述了涉及嵌段共聚物的自组装的方法，其中从具有目标CD（临界尺寸）的开口（在一个或多个衬底中）开始，以规则阵列或任意布置形成孔。 显着地，形成的孔的平均直径的百分比变化小于初始开口的平均直径的变化百分比。 形成的孔（或通孔）可以被转移到下面的基底中，然后这些孔可以用诸如金属导体的材料回填。 本发明的优选方面能够创建具有更紧的间距和更好的CD均匀性的通孔，即使在22nm以下的技术节点。

公开(公告)号：US08059885B2

公开(公告)日：2011-11-15

申请号：US12015768

申请日：2008-01-17

申请人： Jaione Tirapu-Azpiroz ,  Kafai Lai ,  David O. S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Jaione Tirapu-Azpiroz ,  Kafai Lai ,  David O. S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G06K9/00

CPC分类号： G03F7/705 ,  G03F1/36

摘要： A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask.

摘要翻译： 公开了一种用于计算集成电路处理中使用的掩模的图像强度的方法，系统，计算机程序产品和表查找系统。 方法可以包括：基于曼哈顿多边形沿着一个维度的平行边缘，将掩模的曼哈顿多边形分解为分解区域; 基于表查找确定每个分解区域的卷积; 基于分解区域的卷积确定曼哈顿多边形的相干系统贡献的总和; 并输出确定的用于分析掩模的相干系统贡献的总和。

公开(公告)号：US20110256486A1

公开(公告)日：2011-10-20

申请号：US13158901

申请日：2011-06-13

申请人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/20

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US07787101B2

公开(公告)日：2010-08-31

申请号：US11307669

申请日：2006-02-16

申请人： Raschid J. Bezama ,  Dario L. Goldfarb ,  Kafai Lai ,  Xiao H. Liu ,  Dmitriy Shneyder

发明人： Raschid J. Bezama ,  Dario L. Goldfarb ,  Kafai Lai ,  Xiao H. Liu ,  Dmitriy Shneyder

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G03F7/707

摘要： An apparatus for reducing contamination in immersion lithography includes a wafer chuck assembly including a wafer chuck configured to hold a semiconductor wafer on a support surface thereof. An O-ring assembly has a deformable O-ring attached to movable support sections arranged in a generally circular configuration so as to surround the wafer.

摘要翻译： 一种用于减少浸没式光刻中的污染的装置包括晶片卡盘组件，其包括构造成将半导体晶片保持在其支撑表面上的晶片卡盘。 O形环组件具有可变形的O形环，其可连接到以大致圆形构造布置的可移动支撑部分，以便围绕晶片。

公开(公告)号：US07501212B2

公开(公告)日：2009-03-10

申请号：US11029884

申请日：2005-01-05

申请人： Kafai Lai ,  Chieh-Yu Lin ,  Nayak Jawahar ,  Mukherjee Maharaj

发明人： Kafai Lai ,  Chieh-Yu Lin ,  Nayak Jawahar ,  Mukherjee Maharaj

IPC分类号： G03F9/00

CPC分类号： G03F1/70 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70941

摘要： A method is described for computing distance based and pattern density based design rules for the mask layout design of a VLSI chip so that the design satisfying the above design rules when manufactured on a wafer do not violate the specified tolerance on the critical dimensions (CD). The design rules are developed on the computed enclosed energy which is a convolution of the total optical energy and the pattern density of the mask. The total optical energy is the sum of the short range diffraction limited optical energy and the long range optical flare. The method steps for generating rules for a mask layout include: selecting a mask shape from a plurality thereof inputted from the mask layout, and determining a CD of the selected mask shape and a tolerance on variations of the CD; building a physical model of a component of the energy contributed by surrounding regions at a predetermined distance from the CD; using the physical model, computing the energy enclosed within the surrounding regions at the predetermined distance, and the maximum pattern density there of while remaining within the tolerance on variations of the CD; and outputting the maximum pattern density as a rule for the surrounding region at that distance.

摘要翻译： 描述了一种用于针对VLSI芯片的掩模布局设计计算基于距离和基于图案密度的设计规则的方法，使得当在晶片上制造时满足上述设计规则的设计不违反关键尺寸（CD）上的指定公差， 。 设计规则是在计算的封闭能量上开发的，该能量是总光能和掩模的图案密度的卷积。 总光能是短程衍射受限光能与长距离光学耀斑的总和。 用于生成用于掩模布局的规则的方法步骤包括：从其从掩模布局输入的多个选择掩模形状，以及确定所选择的掩模形状的CD和对CD的变化的容限; 建立距离CD预定距离的周围区域贡献的能量的分量的物理模型; 使用物理模型，计算围绕在预定距离的周围区域内的能量，以及其中的最大模式密度，同时保持在CD的变化的容限内; 并且在该距离处作为周围区域的规则输出最大图案密度。

公开(公告)号：US20090040486A1

公开(公告)日：2009-02-12

申请号：US12208358

申请日：2008-09-11

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

IPC分类号： G03B27/42

CPC分类号： G03F7/70216

摘要： A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。 采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。 成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分 从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

公开(公告)号：US07366342B2

公开(公告)日：2008-04-29

申请号：US10694299

申请日：2003-10-27

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06K9/00

CPC分类号： G03F1/36

摘要： Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

摘要翻译： 方法和程序存储设备，用于通过提供具有交互距离的感兴趣区域（ROI）和定位ROI内的至少一个多边形来执行基于模型的光学邻近度校正。 在多边形的至少一个侧边缘上，在ROI内产生代表一组顶点或多个切割线的采样点的切割线。 确定角位置，并且切割线的切割线的第一和第二部分位于切割线和多边形的侧边缘之间的交叉点的相对侧上，随后通过将原始ROI延伸超过其相互作用距离来生成新的ROI 在这种角度位置上，以及切割线的第一和第二部分。 以这种方式，可以在各种不同的方向上产生各种新的ROI，以最终校正光学邻近度。

公开(公告)号：US07343582B2

公开(公告)日：2008-03-11

申请号：US11138172

申请日：2005-05-26

申请人： Maharaj Mukherjee ,  Scott M. Mansfield ,  Alan E. Rosenbluth ,  Kafai Lai

发明人： Maharaj Mukherjee ,  Scott M. Mansfield ,  Alan E. Rosenbluth ,  Kafai Lai

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G03F1/36 ,  G03F7/70441 ,  G06F2217/12 ,  Y02P90/265

摘要： A method, program product and system is disclosed for performing optical proximity correction (OPC) wherein mask shapes are fragmented based on the effective image processing influence of neighboring shapes on the shape to be fragmented. Neighboring shapes are smoothed prior to determining their influence on the fragmentation of the shape of interest, where the amount of smoothing of a neighboring shape increases as the influence of the neighboring shape on the image process of the shape of interest decreases. A preferred embodiment includes the use of multiple regions of interactions (ROIs) around the shape of interest, and assigning a smoothing parameter to a given ROI that increases as the influence of shapes in that ROI decreases with respect to the shape to be fragmented. The invention provides for accurate OPC that is also efficient.

摘要翻译： 公开了一种用于执行光学邻近校正（OPC）的方法，程序产品和系统，其中基于相邻形状对要分段的形状的有效图像处理影响，掩模形状被分段。 相邻形状在确定其对感兴趣的形状的碎片的影响之前被平滑，其中相邻形状的平滑化量随着相关形状对感兴趣形状的图像处理的影响而增加。 优选实施例包括使用感兴趣的形状周围的多个交互区域（ROI），以及为给定的ROI分配平滑参数，随着该ROI中的形状的影响相对于待分割的形状而减小。 本发明提供了也是有效的精确OPC。

公开(公告)号：US20080037858A1

公开(公告)日：2008-02-14

申请号：US11874281

申请日：2007-10-18

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06K9/00

CPC分类号： G03F1/36

摘要： Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

摘要翻译： 方法和程序存储设备，用于通过提供具有交互距离的感兴趣区域（ROI）和定位ROI内的至少一个多边形来执行基于模型的光学邻近度校正。 在多边形的至少一个侧边缘上，在ROI内产生代表一组顶点或多个切割线的采样点的切割线。 确定角位置，并且切割线的位于切割线和多边形的侧边缘之间的交叉点的相对侧上的切割线的第一和第二部分，然后通过将原始ROI延伸超过其相互作用距离来生成新的ROI 在这种角度位置上，以及切割线的第一和第二部分。 以这种方式，可以在各种不同的方向上产生各种新的ROI，以最终校正光学邻近度。

公开(公告)号：US07287239B2

公开(公告)日：2007-10-23

申请号：US10694473

申请日：2003-10-27

申请人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

发明人： Gregg M. Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark A. Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan E. Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。