公开(公告)号：US20060145806A1

公开(公告)日：2006-07-06

申请号：US11320898

申请日：2005-12-30

申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

IPC分类号： H01F5/00

CPC分类号： H03K19/16 ,  H01L43/08

摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

公开(公告)号：US09000789B2

公开(公告)日：2015-04-07

申请号：US13240528

申请日：2011-09-22

申请人： Eun-sik Kim ,  Kil-yeon Kim ,  Yun-bo Yang ,  Kui-hyun Ro ,  Heon-gwon Lee ,  Young-jae Jung

发明人： Eun-sik Kim ,  Kil-yeon Kim ,  Yun-bo Yang ,  Kui-hyun Ro ,  Heon-gwon Lee ,  Young-jae Jung

IPC分类号： G01R31/3187

CPC分类号： G01R31/2851 ,  G01R31/2607 ,  G01R31/2855 ,  G01R31/3187

摘要： A method for testing a plurality of semiconductor apparatuses, the method including mounting a plurality of semiconductor apparatuses on a first test board, wherein the plurality of semiconductor apparatuses include test circuits, loading test software into the test circuits, performing, by using the test circuits, self-tests on the plurality of semiconductor apparatuses based on the test software, and removing the plurality of semiconductor apparatuses, which have completed the self-tests, from the first test board. Upon completion of the loading of the test software, the test software is loaded into test circuits of a plurality of semiconductor apparatuses on a second test board, while the self-tests are performed on the plurality of semiconductor apparatuses on the first test board.

摘要翻译： 一种用于测试多个半导体器件的方法，所述方法包括在第一测试板上安装多个半导体器件，其中所述多个半导体器件包括测试电路，将测试软件加载到测试电路中，通过使用测试电路 基于测试软件对多个半导体装置进行自检，并且从第一测试板去除完成了自检的多个半导体装置。 在完成测试软件的加载之后，在第一测试板上对多个半导体设备执行自检，将测试软件加载到第二测试板上的多个半导体设备的测试电路中。

公开(公告)号：US08315014B2

公开(公告)日：2012-11-20

申请号：US12123492

申请日：2008-05-20

申请人： Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

发明人： Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

IPC分类号： G11B5/127

CPC分类号： G11B5/33 ,  G11B5/1278 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3163

摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

摘要翻译： 提供一种垂直磁记录头及其制造方法。 垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场 尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。 线圈通过主极以上的次数小于线圈通过主极以下的次数。

公开(公告)号：US07820311B2

公开(公告)日：2010-10-26

申请号：US11348485

申请日：2006-02-07

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B5/64

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US20090116144A1

公开(公告)日：2009-05-07

申请号：US12123492

申请日：2008-05-20

申请人： Joo-ho LEE ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

发明人： Joo-ho LEE ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

IPC分类号： G11B5/33

CPC分类号： G11B5/33 ,  G11B5/1278 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3163

摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

摘要翻译： 提供一种垂直磁记录头及其制造方法。 垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场 尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。 线圈通过主极以上的次数小于线圈通过主极以下的次数。

公开(公告)号：US07020011B2

公开(公告)日：2006-03-28

申请号：US10714609

申请日：2003-11-18

申请人： Eun-sik Kim ,  Yong-su Kim

发明人： Eun-sik Kim ,  Yong-su Kim

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/16

摘要： A high density magnetoresistance memory and a manufacturing method thereof are provided. The magnetoresistance memory includes: a memory cell storing information; a conductive line contacting the memory cell to change the magnetization direction of the memory cell by generating a magnetic field; and at least one flux concentrating island (FCI) located between the conductive line and the memory cell for concentrating flux onto the memory cell. The flux is concentrated onto the memory cell to reduce a required electric current and improve selectivity, thereby forming a high-density and highly integrated memory cell.

摘要翻译： 提供了一种高密度磁阻存储器及其制造方法。 磁阻存储器包括：存储信息的存储单元; 接触所述存储单元的导线，通过产生磁场来改变所述存储单元的磁化方向; 以及位于导线和存储单元之间的至少一个集流岛（FCI），用于将磁通集中到存储单元上。 磁通集中在存储单元上以减少所需的电流并提高选择性，从而形成高密度和高度集成的存储单元。

公开(公告)号：US07687838B2

公开(公告)日：2010-03-30

申请号：US11240570

申请日：2005-10-03

申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

IPC分类号： H01L21/66 ,  H01L21/00 ,  G11B9/00 ,  G11B3/00 ,  G11B11/00

CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

公开(公告)号：US07508041B2

公开(公告)日：2009-03-24

申请号：US11208618

申请日：2005-08-23

申请人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

发明人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer and a material layer formed around the insulating layer, the material layer being co-axial with the conductive layer and having a plurality of magnetic layers. The material layer includes a lower magnetic layer, a tunneling layer, and an upper magnetic layer that are sequentially stacked around and along the conductive layer.

摘要翻译： 磁存储器件包括具有圆柱形形状的磁隧道结（MTJ）结构。 MTJ结构的元素是同轴的。 MTJ结构包括导电层，围绕导电层同轴形成的绝缘层和围绕绝缘层形成的材料层，该材料层与导电层同轴并具有多个磁性层。 材料层包括依次层叠并沿着导电层的下磁性层，隧道层和上磁性层。

公开(公告)号：US20060175644A1

公开(公告)日：2006-08-10

申请号：US11348485

申请日：2006-02-07

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： H01L29/94

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US07529119B2

公开(公告)日：2009-05-05

申请号：US11320898

申请日：2005-12-30

申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

IPC分类号： G11C11/00

CPC分类号： H03K19/16 ,  H01L43/08

摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

摘要翻译： 提供了一种磁逻辑器件（MLD）以及制造和操作MLD的方法。 MLD包括：第一个互连; 形成在所述第一互连上的下磁性层，所述下磁性层具有沿预定方向固定的磁化方向; 形成在下磁性层上的非磁性层; 形成在所述非磁性层上的上磁性层，所述上磁性层具有与所述下磁性层的磁化方向平行或反平行的磁化方向; 以及形成在上磁性层上的第二互连。 第一电流源设置在第一互连的一端和第二互连的一端之间，第二电流源设置在第一互连的另一端和第二互连的另一端之间。