公开(公告)号：US08315014B2

公开(公告)日：2012-11-20

申请号：US12123492

申请日：2008-05-20

申请人： Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

发明人： Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

IPC分类号： G11B5/127

CPC分类号： G11B5/33 ,  G11B5/1278 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3163

摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

摘要翻译： 提供一种垂直磁记录头及其制造方法。 垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场 尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。 线圈通过主极以上的次数小于线圈通过主极以下的次数。

公开(公告)号：US20090116144A1

公开(公告)日：2009-05-07

申请号：US12123492

申请日：2008-05-20

申请人： Joo-ho LEE ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

发明人： Joo-ho LEE ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

IPC分类号： G11B5/33

CPC分类号： G11B5/33 ,  G11B5/1278 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3163

摘要： Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

摘要翻译： 提供一种垂直磁记录头及其制造方法。 垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场 尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。 线圈通过主极以上的次数小于线圈通过主极以下的次数。

公开(公告)号：US20080055789A1

公开(公告)日：2008-03-06

申请号：US11896214

申请日：2007-08-30

申请人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

发明人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

IPC分类号： G11B5/33

CPC分类号： G11C11/16

摘要： Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

摘要翻译： 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

公开(公告)号：US07778067B2

公开(公告)日：2010-08-17

申请号：US11896214

申请日：2007-08-30

申请人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

发明人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

IPC分类号： G11C11/15

CPC分类号： G11C11/16

摘要： Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

摘要翻译： 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

公开(公告)号：US20080231999A1

公开(公告)日：2008-09-25

申请号：US11952278

申请日：2007-12-07

申请人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Jongill Hong ,  In-jun Hwang ,  Hyoung-joon Choi

发明人： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Jongill Hong ,  In-jun Hwang ,  Hyoung-joon Choi

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/10

摘要： A tunneling magnetoresistive device and a magnetic head including the tunneling magnetoresistive device are provided. The tunneling magnetoresistive device includes a pinned layer and a free layer formed on either side of a tunneling barrier layer, wherein the tunneling barrier layer includes Te—O.

摘要翻译： 提供隧道磁阻器件和包括隧道磁阻器件的磁头。 隧道磁阻器件包括钉扎层和形成在隧道势垒层的任一侧上的自由层，其中隧道势垒层包括Te-O。

公开(公告)号：US07889628B2

公开(公告)日：2011-02-15

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US07672081B2

公开(公告)日：2010-03-02

申请号：US11503296

申请日：2006-08-14

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC分类号： G11B5/127

CPC分类号： G11B5/012 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B2005/0029

摘要： A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.

摘要翻译： 垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。 垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端 在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

公开(公告)号：US07652906B2

公开(公告)日：2010-01-26

申请号：US11851049

申请日：2007-09-06

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  G11C19/0841 ,  Y10S977/933

摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。

公开(公告)号：US20060038247A1

公开(公告)日：2006-02-23

申请号：US11208618

申请日：2005-08-23

申请人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

发明人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

IPC分类号： H01L43/00

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer and a material layer formed around the insulating layer, the material layer being co-axial with the conductive layer and having a plurality of magnetic layers. The material layer includes a lower magnetic layer, a tunneling layer, and an upper magnetic layer that are sequentially stacked around and along the conductive layer.

公开(公告)号：US08115238B2

公开(公告)日：2012-02-14

申请号：US11850988

申请日：2007-09-06

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

IPC分类号： H01L27/148

CPC分类号： G11C11/15 ,  G11C19/0808

摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括写入轨道和列结构。 写入轨迹形成具有预定磁化方向的磁畴。 列结构形成在写入轨道上，并且包括至少一个互连层和至少一个存储轨道。