公开(公告)号：US07892891B2

公开(公告)日：2011-02-22

申请号：US11548647

申请日：2006-10-11

Applicant: Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

Inventor： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC: H01L21/00

CPC classification number: H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

Abstract: Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US07759670B2

公开(公告)日：2010-07-20

申请号：US12136547

申请日：2008-06-10

Applicant: Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

Inventor： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L33/00 ,  H01L29/22 ,  H01L29/24

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US07723718B1

公开(公告)日：2010-05-25

申请号：US11548614

申请日：2006-10-11

Applicant: Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

Inventor： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US07687322B1

公开(公告)日：2010-03-30

申请号：US11548637

申请日：2006-10-11

Applicant: Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

Inventor： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC: H01L21/20

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20080308829A1

公开(公告)日：2008-12-18

申请号：US12136547

申请日：2008-06-10

Applicant: WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

Inventor： WEN-HUANG LIU ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US20140339496A1

公开(公告)日：2014-11-20

申请号：US13895421

申请日：2013-05-16

Applicant: Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

Inventor： Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

IPC: H01L33/22 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/12041

Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Abstract translation: 垂直发光二极管（VLED）裸片包括具有第一类型限制层的外延结构，在被配置为发光的多量子阱（MQW）上的第一类型限制层上的有源层和第二类型限制层 约束层具有粗糙表面。 在第一实施例中，粗糙表面包括在其主表面上具有深度（d）的孔的图案，其由主表面上的高度（h）的突起图案包围。 在第二实施例中，粗糙表面包括由二次突起图案包围的一次隆起图案。

公开(公告)号：US20140151630A1

公开(公告)日：2014-06-05

申请号：US13693199

申请日：2012-12-04

Applicant: Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

Inventor： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC: H01L33/04

CPC classification number: H01L33/0079 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0217 ,  H01S5/18375 ,  H01S5/34333

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US08686461B2

公开(公告)日：2014-04-01

申请号：US13325376

申请日：2011-12-14

Applicant: Jiunn-Yi Chu ,  Chen-Fu Chu ,  Chao-Chen Cheng

Inventor： Jiunn-Yi Chu ,  Chen-Fu Chu ,  Chao-Chen Cheng

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.

Abstract translation: 发光二极管（LED）裸片包括具有第一表面和相对的第二表面的第一基底; 在所述第一基板的所述第二表面上的第二基板; 在所述第一基板的所述第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

公开(公告)号：US08685764B2

公开(公告)日：2014-04-01

申请号：US11761897

申请日：2007-06-12

Applicant: Chen-Fu Chu ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Tri Doan

Inventor： Chen-Fu Chu ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Tri Doan

IPC: H01L33/00

CPC classification number: H01L33/0079

Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

Abstract translation: 提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。 可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。 这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

公开(公告)号：US08614449B1

公开(公告)日：2013-12-24

申请号：US11548620

申请日：2006-10-11

Applicant: Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

Inventor： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC: H01L27/15

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。 相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。