Oxide semiconductor thin-film transistor
    21.
    发明授权
    Oxide semiconductor thin-film transistor 有权
    氧化物半导体薄膜晶体管

    公开(公告)号:US08841663B2

    公开(公告)日:2014-09-23

    申请号:US13080413

    申请日:2011-04-05

    摘要: A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.

    摘要翻译: 薄膜晶体管包括栅电极,源电极,漏电极,栅极绝缘层和氧化物半导体图案。 源极和漏极包括具有第一氧化物形成自由能的第一金属元件。 氧化物半导体图案具有与栅极绝缘层接触的第一表面和与源极和漏极电极接触以与第一表面相对的第二表面。 氧化物半导体图案包括具有绝对值大于或等于第一氧化物形成自由能的绝对值的第二氧化物形成自由能的添加元素,其中包括在第一表面附近的部分中的添加元素的量 为零或小于包含在靠近第二表面的部分中的添加元素的量。

    LOGISTICS SUPPORT METHOD AND SYSTEM FOR ONLINE SHOPPING
    22.
    发明申请
    LOGISTICS SUPPORT METHOD AND SYSTEM FOR ONLINE SHOPPING 审中-公开
    物流支持方法和系统在线购物

    公开(公告)号:US20130138536A1

    公开(公告)日:2013-05-30

    申请号:US13552765

    申请日:2012-07-19

    IPC分类号: G06Q30/06

    摘要: A logistics support method of a logistics support system for supporting online shopping includes: receiving a usable range for a waybill number from at least one delivery service company system; receiving product order information, except for personal information, from a sales company server selling a product; receiving a request for waybill output information containing the product order information from a supply company system supplying the product or the delivery service company system delivering the product; receiving and encrypting the personal information corresponding to the product order information from the sales company server; generating the waybill output information containing the encrypted personal information, the product order information, and a waybill number belong to the usable waybill number range; and transmitting the waybill output information to the supply company system or the delivery service company system.

    摘要翻译: 支持在线购物的物流支持系统的物流支持方法包括:从至少一个送货服务公司系统接收运单号码的可用范围; 从销售产品的销售公司服务器接收产品订单信息(个人信息除外); 从提供产品的供应公司系统或提供产品的送货服务公司系统接收包含产品订单信息的运单输出信息的请求; 从销售公司服务器接收和加密与产品订单信息相对应的个人信息; 产生包含加密的个人信息,产品订单信息和运单号码的运单输出信息属于可用运单数量范围; 并将运单输出信息传送给供应公司系统或送货服务公司系统。

    Nonvolatile memory device and method of reading same
    23.
    发明授权
    Nonvolatile memory device and method of reading same 有权
    非易失性存储器件及其读取方法

    公开(公告)号:US08270227B2

    公开(公告)日:2012-09-18

    申请号:US12717245

    申请日:2010-03-04

    IPC分类号: G11C7/00

    摘要: A method of reading a nonvolatile memory device comprises sensing data stored in memory cells adjacent to selected memory cells to identify adjacent aggressor cells, and performing separate precharge operations on bitlines connected to selected memory cells having adjacent aggressor cells and on bitlines connected to selected memory cells having adjacent non-aggressor cells.

    摘要翻译: 读取非易失性存储器件的方法包括检测存储在与所选择的存储器单元相邻的存储器单元中的数据以识别相邻的侵扰器单元,以及对连接到具有相邻侵略器单元的选定存储器单元的位线和连接到所选存储器单元的位线执行单独的预充电操作 具有相邻的非侵略性细胞。

    Thin film transistor including titanium oxides as active layer and method of manufacturing the same
    24.
    发明授权
    Thin film transistor including titanium oxides as active layer and method of manufacturing the same 有权
    包括钛氧化物作为活性层的薄膜晶体管及其制造方法

    公开(公告)号:US07768042B2

    公开(公告)日:2010-08-03

    申请号:US12058399

    申请日:2008-03-28

    IPC分类号: H01L29/80

    CPC分类号: H01L29/7869

    摘要: Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.

    摘要翻译: 本发明公开了一种制造薄膜晶体管的方法,该薄膜晶体管包括钛氧化物作为有源层,以及使用该方法制造的薄膜晶体管膜的结构。 薄膜晶体管包括:基板; 使用多晶或无定形钛氧化物在所述衬底上形成的有源层; 以及形成在有源层上的绝缘层。 此外,制造薄膜晶体管的方法包括:形成衬底; 使用多晶或无定形钛氧化物在衬底上形成有源层; 以及在所述有源层上形成绝缘层。 本发明的优点在于,可以提高薄膜晶体管的性能,可以以低成本制造薄膜晶体管,可以解决有害的环境问题,并且薄膜晶体管可以广泛地应用于各种电子设备,包括 但不限于有源矩阵显示器和透明电子设备中的集成驱动器。

    SIM/UIM card arrangement in portable wireless terminal
    25.
    发明授权
    SIM/UIM card arrangement in portable wireless terminal 失效
    便携式无线终端中的SIM / UIM卡安排

    公开(公告)号:US07672691B2

    公开(公告)日:2010-03-02

    申请号:US11233646

    申请日:2005-09-23

    IPC分类号: H04B1/38 H04M1/00

    摘要: There is provided a SIM (Subscriber Identity Module)/UIM (User Identity Module) card arrangement in a slide type portable wireless terminal having a main body and a slide body sliding by a predetermined length in a lengthwise direction of the terminal to slide up and down on the main body. In the arrangement, when the slide body is fully slid up, a SIM (Subscriber Identity Module)/UIM (User Identity Module) card is installed on a rear surface, which is open to the view, of the slide body.

    摘要翻译: 提供了一种滑盖式便携式无线终端中的SIM(用户识别模块)/ UIM(用户识别模块)卡配置,其具有主体和沿着终端的长度方向滑动预定长度以滑动的滑动体, 在主体上。 在该结构中,当滑动体完全向上滑动时,在滑动体的视野的后表面上安装有SIM(用户识别模块)/ UIM(用户识别模块)卡。

    Sensor module for detecting relative displacement and method of detecting moving direction using the same
    26.
    发明授权
    Sensor module for detecting relative displacement and method of detecting moving direction using the same 有权
    用于检测相对位移的传感器模块及使用该检测方法检测移动方向

    公开(公告)号:US07626380B2

    公开(公告)日:2009-12-01

    申请号:US11780835

    申请日:2007-07-20

    IPC分类号: G01R33/09 H01L43/02

    摘要: The present invention relates to a sensor module for detecting a relative displacement of an object having a groove pattern with alternately formed projection and depression, which comprises a magnet for generating a magnetic field; a giant magneto resistance (GMR) sensor installed between the magnet and the object to detect a variation in the magnetic field and output an electric signal; a signal processing part for processing the output signal from the GMR sensor to output a square wave; and a housing for supporting the magnet, the GMR sensor and the signal processing part, and a method of detecting a moving direction using the same.

    摘要翻译: 本发明涉及一种用于检测具有交替形成的突起和凹陷的凹槽图案的物体的相对位移的传感器模块,其包括用于产生磁场的磁体; 安装在磁体和物体之间的巨磁电阻(GMR)传感器,以检测磁场的变化并输出电信号; 用于处理来自GMR传感器的输出信号以输出方波的信号处理部分; 以及用于支撑磁体的壳体,GMR传感器和信号处理部分,以及使用其来检测移动方向的方法。

    SENSOR MODULE FOR DETECTING RELATIVE DISPLACEMENT AND METHOD OF DETECTING MOVING DIRECTION USING THE SAME
    27.
    发明申请
    SENSOR MODULE FOR DETECTING RELATIVE DISPLACEMENT AND METHOD OF DETECTING MOVING DIRECTION USING THE SAME 有权
    用于检测相对位移的传感器模块及使用该传感器检测移动方向的方法

    公开(公告)号:US20080265876A1

    公开(公告)日:2008-10-30

    申请号:US11780835

    申请日:2007-07-20

    IPC分类号: G01B7/00 G01R33/09

    摘要: The present invention relates to a sensor module for detecting a relative displacement of an object having a groove pattern with alternately formed projection and depression, which comprises a magnet for generating a magnetic field; a giant magneto resistance (GMR) sensor installed between the magnet and the object to detect a variation in the magnetic field and output an electric signal; a signal processing part for processing the output signal from the GMR sensor to output a square wave; and a housing for supporting the magnet the GMR sensor and the signal processing part, and a method of detecting a moving direction using the same.It is possible to detect in non contact manner and stably a moving direction, a moving distance, a moving speed and the like using the sensor module of the present invention. In addition, the sensor module of the present invention can be used regardless of a shape or a kind of an actuator and can detect accurately even if a contact point with an object is limited in a small, area. In addition, it is possible to provide a sensor module having superior durability and rigidity compared with conventional optical or contact sensor.

    摘要翻译: 本发明涉及一种用于检测具有交替形成的突起和凹陷的凹槽图案的物体的相对位移的传感器模块,其包括用于产生磁场的磁体; 安装在磁体和物体之间的巨磁电阻(GMR)传感器,以检测磁场的变化并输出电信号; 用于处理来自GMR传感器的输出信号以输出方波的信号处理部分; 以及用于将磁铁支撑在GMR传感器和信号处理部件上的壳体,以及使用该壳体的移动方向的检测方法。 可以使用本发明的传感器模块以非接触的方式和稳定地检测移动方向,移动距离,移动速度等。 此外,无论驱动器的形状或种类如何,都可以使用本发明的传感器模块,即使与物体的接触点在小的区域中被限制,也能够准确地检测。 此外,与常规光学或接触传感器相比,可以提供具有优异的耐久性和刚度的传感器模块。

    APPARATUS AND METHOD FOR INSPECTING A WAFER
    28.
    发明申请
    APPARATUS AND METHOD FOR INSPECTING A WAFER 审中-公开
    检测波形的装置和方法

    公开(公告)号:US20080186472A1

    公开(公告)日:2008-08-07

    申请号:US12023326

    申请日:2008-01-31

    IPC分类号: G01J3/00 G01N21/00 G01J4/00

    摘要: An apparatus for inspecting a wafer includes a light source, a detecting part and a signal analyzing part. The light source emits a light onto the wafer, and the detecting part detects a radiation light emitted from the wafer by the light and generates a signal. The signal analyzing part analyzes the signal generated by the detecting part and determines whether a defect has been formed on the wafer.

    摘要翻译: 用于检查晶片的装置包括光源,检测部和信号分析部。 光源将光发射到晶片上,并且检测部分通过光检测从晶片发射的辐射光并产生信号。 信号分析部分分析由检测部分产生的信号,并确定是否在晶片上形成缺陷。

    Methods for accelerated erase operations in non-volatile memory devices and related devices
    29.
    发明授权
    Methods for accelerated erase operations in non-volatile memory devices and related devices 失效
    在非易失性存储器件和相关器件中加速擦除操作的方法

    公开(公告)号:US07200049B2

    公开(公告)日:2007-04-03

    申请号:US11247839

    申请日:2005-10-11

    IPC分类号: G11C11/34

    CPC分类号: G11C16/3468

    摘要: Memory cells in a memory cell array are erased using an erase operation followed by a post-program operation. In the erase operation, an erase voltage is applied to a plurality of memory cells of the memory cell array. In the post program operation, a program voltage is simultaneously applied to at least two word lines coupled to ones of the plurality of erased memory cells of the memory cell array. Related devices are also discussed.

    摘要翻译: 存储单元阵列中的存储单元将使用擦除操作,随后进行后期程序擦除。 在擦除操作中,擦除电压被施加到存储单元阵列的多个存储单元。 在后期编程操作中,将编程电压同时施加到与存储单元阵列的多个被擦除的存储单元中的一个相连的至少两个字线。 还讨论了相关设备。

    Display substrate and method of manufacturing the same
    30.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US08598577B2

    公开(公告)日:2013-12-03

    申请号:US13177783

    申请日:2011-07-07

    IPC分类号: H01L29/786

    摘要: A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

    摘要翻译: 显示基板包括在基底基板上沿第一方向延伸的栅极线,在基底基板上的数据线,并且沿与第一方向交叉的第二方向延伸,栅极线上的栅极绝缘层,薄膜晶体管和 像素电极。 薄膜晶体管包括栅电极,电极连接栅极线,氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。 氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。 像素电极与漏电极电连接。