摘要:
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.
摘要:
A logistics support method of a logistics support system for supporting online shopping includes: receiving a usable range for a waybill number from at least one delivery service company system; receiving product order information, except for personal information, from a sales company server selling a product; receiving a request for waybill output information containing the product order information from a supply company system supplying the product or the delivery service company system delivering the product; receiving and encrypting the personal information corresponding to the product order information from the sales company server; generating the waybill output information containing the encrypted personal information, the product order information, and a waybill number belong to the usable waybill number range; and transmitting the waybill output information to the supply company system or the delivery service company system.
摘要:
A method of reading a nonvolatile memory device comprises sensing data stored in memory cells adjacent to selected memory cells to identify adjacent aggressor cells, and performing separate precharge operations on bitlines connected to selected memory cells having adjacent aggressor cells and on bitlines connected to selected memory cells having adjacent non-aggressor cells.
摘要:
Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.
摘要:
There is provided a SIM (Subscriber Identity Module)/UIM (User Identity Module) card arrangement in a slide type portable wireless terminal having a main body and a slide body sliding by a predetermined length in a lengthwise direction of the terminal to slide up and down on the main body. In the arrangement, when the slide body is fully slid up, a SIM (Subscriber Identity Module)/UIM (User Identity Module) card is installed on a rear surface, which is open to the view, of the slide body.
摘要:
The present invention relates to a sensor module for detecting a relative displacement of an object having a groove pattern with alternately formed projection and depression, which comprises a magnet for generating a magnetic field; a giant magneto resistance (GMR) sensor installed between the magnet and the object to detect a variation in the magnetic field and output an electric signal; a signal processing part for processing the output signal from the GMR sensor to output a square wave; and a housing for supporting the magnet, the GMR sensor and the signal processing part, and a method of detecting a moving direction using the same.
摘要:
The present invention relates to a sensor module for detecting a relative displacement of an object having a groove pattern with alternately formed projection and depression, which comprises a magnet for generating a magnetic field; a giant magneto resistance (GMR) sensor installed between the magnet and the object to detect a variation in the magnetic field and output an electric signal; a signal processing part for processing the output signal from the GMR sensor to output a square wave; and a housing for supporting the magnet the GMR sensor and the signal processing part, and a method of detecting a moving direction using the same.It is possible to detect in non contact manner and stably a moving direction, a moving distance, a moving speed and the like using the sensor module of the present invention. In addition, the sensor module of the present invention can be used regardless of a shape or a kind of an actuator and can detect accurately even if a contact point with an object is limited in a small, area. In addition, it is possible to provide a sensor module having superior durability and rigidity compared with conventional optical or contact sensor.
摘要:
An apparatus for inspecting a wafer includes a light source, a detecting part and a signal analyzing part. The light source emits a light onto the wafer, and the detecting part detects a radiation light emitted from the wafer by the light and generates a signal. The signal analyzing part analyzes the signal generated by the detecting part and determines whether a defect has been formed on the wafer.
摘要:
Memory cells in a memory cell array are erased using an erase operation followed by a post-program operation. In the erase operation, an erase voltage is applied to a plurality of memory cells of the memory cell array. In the post program operation, a program voltage is simultaneously applied to at least two word lines coupled to ones of the plurality of erased memory cells of the memory cell array. Related devices are also discussed.
摘要:
A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.