公开(公告)号：US20050219968A1

公开(公告)日：2005-10-06

申请号：US11096581

申请日：2005-04-01

申请人： Chih-Hung Lin ,  Hsiang-Hao Lee ,  Hung-Ping Liu ,  Kun Yang

发明人： Chih-Hung Lin ,  Hsiang-Hao Lee ,  Hung-Ping Liu ,  Kun Yang

IPC分类号： G11B7/085 ,  G11B17/04 ,  G11B19/12

CPC分类号： G11B19/124 ,  G11B17/056

摘要： A method for controlling disk-tray ejection in an optical disk apparatus is provided. The optical disk apparatus includes a control unit and a tray that supports a disk. The method includes the steps of: (a) determining the diameter value of the disk; (b) driving the tray by the control unit with a first driving force to process the disk ejection procedure if the diameter value is a first length; and (c) driving the tray by the control unit with a second driving force to process the disk ejection procedure if the diameter is not the first length.

摘要翻译： 提供了一种用于控制光盘装置中盘盘排出的方法。 光盘装置包括控制单元和支撑盘的托盘。 该方法包括以下步骤：（a）确定盘的直径值; （b）如果所述直径值是第一长度，则利用所述控制单元用所述第一驱动力驱动所述托盘以处理所述盘喷射程序; 和（c）如果直径不是第一长度，则用第二驱动力由控制单元驱动托盘以处理盘排出程序。

公开(公告)号：US06303439B1

公开(公告)日：2001-10-16

申请号：US09449297

申请日：1999-11-24

申请人： Robin Lee ,  Chih-Hung Lin

发明人： Robin Lee ,  Chih-Hung Lin

IPC分类号： H01L218247

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L29/7887

摘要： A method for fabricating a two-bit flash memory cell is described in which a substrate with a trench formed therein is provided. A conformal tunnel oxide layer is then formed on the substrate, followed by forming polysilicon spacers on the portion of the tunnel oxide layer which covers the sidewalls of the trench. The polysilicon spacers are separated into a first polysilicon spacer on the right sidewall and a second polysilicon spacer on the left sidewall. Thereafter, a gate oxide layer is formed on the polysilicon spacers, followed by forming a polysilicon gate on the gate oxide layer in the substrate. Subsequently, a source/drain region is formed on both sides of the polysilicon gate in the substrate.

摘要翻译： 描述了一种用于制造双位闪存单元的方法，其中提供了形成有沟槽的衬底。 然后在衬底上形成保形隧道氧化物层，随后在覆盖沟槽侧壁的隧道氧化物层的部分上形成多晶硅间隔物。 多晶硅间隔物被分离成右侧壁上的第一多晶硅间隔物和左侧壁上的第二多晶硅间隔物。 此后，在多晶硅间隔物上形成栅极氧化层，随后在衬底的栅极氧化物层上形成多晶硅栅极。 随后，在衬底中的多晶硅栅极的两侧上形成源/漏区。

公开(公告)号：US06207504B1

公开(公告)日：2001-03-27

申请号：US09223337

申请日：1998-12-30

申请人： Alex Hsieh ,  Chun-Ming Wu ,  Chih-Hung Lin

发明人： Alex Hsieh ,  Chun-Ming Wu ,  Chih-Hung Lin

IPC分类号： H01L21336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A method of fabricating flash erasable programmable read only memory. A substrate having an isolation structure is provided. A tunnel oxide layer and a floating gate layer are formed in sequence over substrate and are patterned. An ion implantation is performed and a first doped region is formed in the substrate. An oxidation step is performed to form a first oxide layer over the substrate. A nitride/oxide layer and a control gate layer are formed in sequence over the substrate. The control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer are patterned until the substrate is exposed. An ion implantation step is performed to form a common source region and a drain region in the substrate. Spacers are formed over the sidewalls of the control gate layer, the nitride/oxide layer, the first oxide layer, and the floating gate layer. A self-aligned silicide step is performed to form silicide layers over the control gate layer, the common source region, and the drain region.

摘要翻译： 一种制造闪存可擦除可编程只读存储器的方法。 提供具有隔离结构的基板。 在衬底上依次形成隧道氧化物层和浮栅，并进行图案化。 进行离子注入并且在衬底中形成第一掺杂区域。 执行氧化步骤以在衬底上形成第一氧化物层。 在衬底上依次形成氮化物/氧化物层和控制栅极层。 对控制栅极层，氮化物/氧化物层，第一氧化物层和浮置栅极层进行图案化，直到基板露出为止。 执行离子注入步骤以在衬底中形成公共源极区域和漏极区域。 间隔件形成在控制栅极层，氮化物/氧化物层，第一氧化物层和浮动栅极层的侧壁上。 执行自对准硅化物步骤以在控制栅极层，公共源极区域和漏极区域上形成硅化物层。

公开(公告)号：US5716874A

公开(公告)日：1998-02-10

申请号：US603248

申请日：1996-02-20

申请人： Joe Ko ,  Gary Hong ,  Chih-Hung Lin

发明人： Joe Ko ,  Gary Hong ,  Chih-Hung Lin

IPC分类号： H01L21/336 ,  H01L21/8247

CPC分类号： H01L29/66825

摘要： A method of fabricating an EPROM memory increases a coupling ratio and reduces lateral diffusion by forming a gate oxide layer and a coupling insulator individually. A substrate is provided with a field oxide layer to isolate a predetermined active area. A gate oxide layer is formed on the substrate. On the field oxide layer and the gate oxide layer, a polysilicon layer is deposited and defined, whereby a portion of this polysilicon layer and gate oxide layer form a gate electrode. Using the gate electrode as a mask, the substrate is implanted with impurities to provide source and drain electrodes. A dielectric layer is formed on polysilicon layer. A contact window (via) is formed in a predetermined area of dielectric layer. An insulator is deposited and defined by etching, on dielectric layer and the contact window. On the insulator and dielectric layer, a metal contact layer is deposited and defined to cover the insulator.

摘要翻译： 制造EPROM存储器的方法通过单独形成栅极氧化物层和耦合绝缘体来增加耦合比并减小横向扩散。 衬底设置有场氧化物层以隔离预定的有效面积。 在衬底上形成栅氧化层。 在场氧化物层和栅极氧化物层上沉积并限定多晶硅层，由此该多晶硅层和栅极氧化物层的一部分形成栅电极。 使用栅电极作为掩模，衬底被注入杂质以提供源极和漏极。 介电层形成在多晶硅层上。 在电介质层的预定区域中形成接触窗（通孔）。 通过在电介质层和接触窗上进行蚀刻来沉积并限定绝缘体。 在绝缘体和电介质层上，沉积和限定金属接触层以覆盖绝缘体。

公开(公告)号：USD910408S1

公开(公告)日：2021-02-16

申请号：US29708162

申请日：2019-10-03

申请人： Chih-Hung Lin

设计人： Chih-Hung Lin

公开(公告)号：US20190230895A1

公开(公告)日：2019-08-01

申请号：US15884432

申请日：2018-01-31

申请人： Chih-Hung Lin ,  Li- Wen Shen

发明人： Chih-Hung Lin ,  Li- Wen Shen

IPC分类号： A01K1/03 ,  A01K1/035

CPC分类号： A01K1/033 ,  A01K1/035

摘要： A pet combination house includes a housing and a connecting unit. The housing includes a plurality of plates, with a folding line being formed at a connection of two plates. The plates are folded upward along the folding line and are connected together to construct the housing. Some of the plates have a side respectively provided with a fastening member. The fastening members of the plates are detachably combined together in pairs when the housing is disposed at the three-dimensional state. At least one of the plates is provided with an opening. At least one of the plates has a face provided with a plurality of apertures. The connecting unit includes a plurality of retaining members mounted on the plates and aligning with the apertures, and a plurality of connecting members mounted in the apertures and retained by the retaining members.

公开(公告)号：US20180192804A1

公开(公告)日：2018-07-12

申请号：US15399830

申请日：2017-01-06

申请人： Chih-Hung Lin

发明人： Chih-Hung Lin

IPC分类号： A47G23/02 ,  B32B27/06 ,  B32B5/18 ,  B65D81/38

CPC分类号： A47G23/0216 ,  A47G23/0241 ,  B32B5/18 ,  B32B27/06 ,  B32B2323/043 ,  B32B2323/046 ,  B32B2439/00 ,  B65D81/3886

摘要： A foldable container sleeve adapted to sleeve around a container includes a sleeve body for sleeving around the container. The sleeve body includes an insulating layer for wrapping around and contacting the container, a laminating layer disposed along and connected to an exterior surface of the insulating layer, and a smooth layer disposed along and connected to an exterior surface of the laminating layer. The insulating layer is made of a polyethylene foam material, the laminating layer is made of a polyethylene material, and the smooth layer is made of a thermoplastic material.

公开(公告)号：US08786815B2

公开(公告)日：2014-07-22

申请号：US13330627

申请日：2011-12-19

申请人： Chih-Hung Lin ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Che-Chia Chang ,  Sheng-Chao Liu ,  Yu-Cheng Chen ,  Yi-Hui Li ,  Maw-Song Chen

发明人： Chih-Hung Lin ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Che-Chia Chang ,  Sheng-Chao Liu ,  Yu-Cheng Chen ,  Yi-Hui Li ,  Maw-Song Chen

IPC分类号： G02F1/133 ,  G02F1/1368

CPC分类号： G02F1/133707 ,  G02F1/136213 ,  G02F2201/40

摘要： A display panel having a display region and a non-display region is provided. The display panel includes a plurality of pixel structures in the display region, and each pixel structure includes a scan line, a data line, a first active device, a pixel electrode, a first insulating layer, a capacitor electrode, and a second insulating layer. The first active device includes a first gate, a first channel, a first source, and a first drain. The second insulating layer covers the first insulating layer and the capacitor electrode and is located between the capacitor electrode and the first drain. At least one driving circuit is disposed in the non-display region and includes at least one second active device. Hence, a relatively thin insulating layer can be disposed between the capacitor electrode and the drain to reduce the area of the capacitor region and to achieve a desired aperture ratio.

摘要翻译： 提供具有显示区域和非显示区域的显示面板。 显示面板包括显示区域中的多个像素结构，并且每个像素结构包括扫描线，数据线，第一有源器件，像素电极，第一绝缘层，电容器电极和第二绝缘层 。 第一有源器件包括第一栅极，第一沟道，第一源极和第一漏极。 第二绝缘层覆盖第一绝缘层和电容器电极，并且位于电容器电极和第一漏极之间。 至少一个驱动电路设置在非显示区域中并且包括至少一个第二有源器件。 因此，可以在电容器电极和漏极之间设置相对薄的绝缘层，以减小电容器区域的面积并实现所需的孔径比。

公开(公告)号：US08650567B2

公开(公告)日：2014-02-11

申请号：US13287650

申请日：2011-11-02

申请人： Zhi-Wei Chen ,  Chia-Wei Tien ,  Chin-Wei Tien ,  Chih-Hung Lin

发明人： Zhi-Wei Chen ,  Chia-Wei Tien ,  Chin-Wei Tien ,  Chih-Hung Lin

IPC分类号： G06F9/455

CPC分类号： G06F21/53 ,  G06F9/45558 ,  G06F11/3093 ,  G06F2009/45587 ,  G06F2201/815 ,  G06F2201/865

摘要： A virtual machine monitoring method used in a virtual machine monitoring system is provided. The virtual machine monitoring method includes retrieving a hypercall transmitted from one of a plurality of virtual machines to a hypervisor of a virtual machine monitoring system, wherein the hypercall is used for establishing a channel between a source virtual machine and a target virtual machine. A central control virtual machine ID information in the hypervisor is retrieved. A type of the channel established by the hypercall is determined according to the central control virtual machine ID information and channel-establishing information corresponding to the hypercall. When the channel is a private channel that is not related to a central control virtual machine of the virtual machines, a security module is used to monitor the private channel.

摘要翻译： 提供了虚拟机监控系统中使用的虚拟机监控方法。 所述虚拟机监视方法包括检索从多个虚拟机中的一个发送到虚拟机监视系统的管理程序的超级呼叫，其中，所述超级呼叫用于在源虚拟机和目标虚拟机之间建立通道。 检索管理程序中的中央控制虚拟机ID信息。 根据中心控制虚拟机ID信息和对应于该超级呼叫的信道建立信息来确定由超级呼叫建立的信道类型。 当信道是与虚拟机的中央控制虚拟机无关的专用信道时，使用安全模块来监视专用信道。

公开(公告)号：USD691802S1

公开(公告)日：2013-10-22

申请号：US29438984

申请日：2012-12-05

申请人： Chih-Hung Lin

设计人： Chih-Hung Lin