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    Nonlinear crystal modifications for durable high-power laser wavelength conversion
    21.
    发明申请
    Nonlinear crystal modifications for durable high-power laser wavelength conversion 审中-公开
    用于耐用的大功率激光波长转换的非线性晶体修改

    公开(公告)号：US20060114946A1

    公开(公告)日：2006-06-01

    申请号：US11001486

    申请日：2004-11-30

    申请人： Yunlong Sun ,  Richard Harris

    发明人： Yunlong Sun ,  Richard Harris

    IPC分类号： H01S3/10

    CPC分类号： H01S3/109

    摘要： A wavelength converter (34) such as a nonlinear crystal has an angle cut exit surface (36) to separate a harmonic wavelength from a fundamental or different harmonic wavelength. A solid optical overlay medium (28) has an entrance surface (38) that is angle cut to mate with the converter exit surface (36). The optical overlay medium (28) is substantially transparent to the fundamental and selected harmonic wavelengths, has a refractive index similar to that of the wavelength converter (34), and has damage thresholds at the selected wavelengths that are greater than the respective damage thresholds of the wavelength converter (34).

    摘要翻译： 诸如非线性晶体的波长转换器（34）具有将谐波波长与基波或不同谐波波长分离的角度切除出射表面（36）。 固体光学覆盖介质（28）具有与转换器出口表面（36）配合的角度切割的入口表面（38）。 光学覆盖介质（28）对于基本和选定的谐波波长基本上是透明的，具有与波长转换器（34）的折射率类似的折射率，并且在所选择的波长处具有大于相应损伤阈值的损伤阈值 波长转换器（34）。

    Ultraviolet laser ablative patterning of microstructures in semiconductors
    29.
    发明申请
    Ultraviolet laser ablative patterning of microstructures in semiconductors 审中-公开
    半导体微结构的紫外激光烧蚀图案化

    公开(公告)号：US20060091126A1

    公开(公告)日：2006-05-04

    申请号：US11280957

    申请日：2005-11-15

    申请人： Brian Baird ,  Michael Wolfe ,  Richard Harris ,  Kevin Fahey ,  Lian-Cheng Zou ,  Thomas McNeil

    发明人： Brian Baird ,  Michael Wolfe ,  Richard Harris ,  Kevin Fahey ,  Lian-Cheng Zou ,  Thomas McNeil

    IPC分类号： B23K26/38 ,  B23K26/067

    CPC分类号： H01L21/78 ,  B23K26/0604 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

    摘要： Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.

    摘要翻译： 特征尺寸小于50微米的图案使用紫外激光烧蚀直接在半导体，特别是硅，GaAs，磷化铟或单晶蓝宝石中形成。 这些图案包括用于集成电路连接的非常高的纵横比圆柱形通孔开口; 包含在半导体晶片上的加工芯片的分割; 和微型切割以从母半导体晶片分离微电路工件。 来自二极管泵浦Q开关频率三倍的Nd：YAG，Nd：YVO 4或Nd：YLF的激光输出脉冲（32）以高速精度被引导到工件（12） 使用复合光束定位器。 光学系统产生约10微米的高斯光点尺寸或顶帽光束轮廓。 用于使用这种聚焦光点尺寸的半导体高速烧蚀处理的脉冲能量大于5kHz，优选高于15kHz的脉冲重复频率时，每脉冲大于200μJ。 在全宽度半最大点处测量的激光脉冲宽度优选小于80ns。