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21.发明申请Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer 有权具有抗反射性能和高碳含量的聚合物，包含其的硬掩模组合物，以及用于形成图案化材料层的方法公开(公告)号：US20080160461A1
公开(公告)日：2008-07-03
申请号：US12003732
申请日：2007-12-31
申请人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
CPC分类号： G03F7/091 , C08G61/02 , C08G61/10 , G03F7/11 , Y10S438/952
摘要： An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C:
摘要翻译： 抗反射硬掩模组合物包括有机溶剂，引发剂和由式A，B或C表示的至少一种聚合物：
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公开(公告)号：US20110097672A1
公开(公告)日：2011-04-28
申请号：US12929072
申请日：2010-12-29
申请人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
CPC分类号： G03F7/091 , C08G61/02 , C08G61/10 , G03F7/11 , Y10S438/952
摘要： An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.
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23.发明申请Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer 有权具有抗反射性的聚合物，包含其的硬掩模组合物以及用于形成图案化材料层的方法公开(公告)号：US20080160460A1
公开(公告)日：2008-07-03
申请号：US12003731
申请日：2007-12-31
申请人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
摘要： A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.
摘要翻译： 由式1表示的萘主链聚合物：其中n和m独立地为至少1且小于约190，R 1是氢，羟基，约10个碳以下的烃基 或卤素，R 2是亚甲基或包括芳基连接基团，R 3是共轭二烯基团，R 4是 不饱和亲电子基团。
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24.发明申请HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTIES AND METHOD OF PATTERNING MATERIAL ON SUBSTRATE USING THE SAME 有权具有抗反射特性的HARDMASK组合物和使用其的基材上的材料的方法公开(公告)号：US20110275019A1
公开(公告)日：2011-11-10
申请号：US13183261
申请日：2011-07-14
申请人： Kyong Ho YOON , Jong Seob Kim , Dong Seon Uh , Hwan Sung Cheon , Chang Il Oh , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho YOON , Jong Seob Kim , Dong Seon Uh , Hwan Sung Cheon , Chang Il Oh , Min Soo Kim , Jin Kuk Lee
CPC分类号： G03F7/091 , Y10S438/952
摘要： A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:
摘要翻译： 硬掩模组合物包括有机溶剂和由式1,2和3表示的一种或多种含芳族环的聚合物：
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25.发明授权Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer 有权具有抗反射性的聚合物，包含其的硬掩模组合物以及用于形成图案化材料层的方法公开(公告)号：US07659051B2
公开(公告)日：2010-02-09
申请号：US12003731
申请日：2007-12-31
申请人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
摘要： A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.
摘要翻译： 由式1表示的萘主链聚合物：其中n和m独立地为至少1且小于约190，R 1为氢，羟基，约10个碳以下的烃基或卤素，R 2为亚甲基 或包括芳基连接基团，R 3是共轭二烯基团，并且R 4是不饱和二亲性基团。
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26.发明申请Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same 有权具有改善半导体器件间隙填充性能的有机硅烷聚合物和使用其的涂料组合物公开(公告)号：US20100167553A1
公开(公告)日：2010-07-01
申请号：US12659379
申请日：2010-03-08
申请人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
发明人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
IPC分类号： H01L21/312 , C08G77/12 , C08L83/05
摘要： A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3 (1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX (2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R′ (3) wherein R and R′ are independently a C1-C6 alkyl group; and [RO]3Si—H (4) wherein R is a C1-C6 alkyl group.
摘要翻译： 一种用于半导体器件间隙填充的聚合物，所述聚合物通过由式1表示的化合物的水解产物，由式2表示的化合物与一种或多种由式3和4表示的化合物缩合制备：[RO] 3 Si - [CH 2] n -Si [OR] 3（1）其中n为0至2，并且每个R独立地为C 1 -C 6烷基; [RO] 3Si- [CH2] nX（2）其中X为C6-C12芳基，n为0-2，R为C1-C6烷基; [RO] 3Si-R'（3）其中R和R'独立地为C1-C6烷基; 和[RO] 3 Si-H（4）其中R是C1-C6烷基。
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27.发明申请COMPOUND FOR GAP-FILLING OF SEMICONDUCTOR DEVICE AND COATING COMPOSITION USING THE SAME 有权用于半导体器件的填隙和使用其的涂层组合物的化合物公开(公告)号：US20100093923A1
公开(公告)日：2010-04-15
申请号：US12451247
申请日：2007-12-31
申请人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
发明人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
摘要： A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.
摘要翻译： 提供了用于填充半导体器件中的小间隙的化合物和包含该化合物的组合物。 通过一般的旋转涂布技术，组合物可以在半导体衬底中完全填充直径为70nm以下的孔，并且在半导体衬底中的纵横比（即高/直径比）为1，没有任何缺陷，例如空气隙。 此外，通过在通过烘烤固化后通过用氢氟酸溶液处理而不会留下任何残留物，可以以可控速率从孔中完全除去组合物。 此外，组合物在储存期间高度稳定。
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28.发明授权Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same 有权具有改善半导体器件间隙填充性能的有机硅烷聚合物和使用其的涂料组合物公开(公告)号：US08299197B2
公开(公告)日：2012-10-30
申请号：US12659379
申请日：2010-03-08
申请人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
发明人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
IPC分类号： C08G77/08
摘要： A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3 (1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX (2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R′ (3) wherein R and R′ are independently a C1-C6 alkyl group; and [RO]3Si—H (4) wherein R is a C1-C6 alkyl group.
摘要翻译： 一种用于半导体器件间隙填充的聚合物，该聚合物通过由式1表示的化合物的水解产物，由式2表示的化合物和一种或多种由式3和4表示的化合物缩合制备：[RO] 3 Si - [CH 2] n -Si [OR] 3（1）其中n为0至2，并且每个R独立地为C 1 -C 6烷基; [RO] 3Si- [CH2] nX（2）其中X为C6-C12芳基，n为0-2，R为C1-C6烷基; [RO] 3Si-R'（3）其中R和R'独立地为C1-C6烷基; 和[RO] 3 Si-H（4）其中R是C1-C6烷基。
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29.发明授权Compound for gap-filling of semiconductor device and coating composition using the same 有权用于半导体器件的间隙填充的化合物和使用其的涂料组合物公开(公告)号：US08383737B2
公开(公告)日：2013-02-26
申请号：US12451247
申请日：2007-12-31
申请人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
发明人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
IPC分类号： C08L83/05
摘要： A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.
摘要翻译： 提供了用于填充半导体器件中的小间隙的化合物和包含该化合物的组合物。 通过一般的旋转涂布技术，组合物可以在半导体衬底中完全填充直径为70nm以下的孔，并且在半导体衬底中的纵横比（即高/直径比）为1，没有任何缺陷，例如空气隙。 此外，通过在通过烘烤固化后通过用氢氟酸溶液处理而不会留下任何残留物，可以以可控速率从孔中完全除去组合物。 此外，组合物在储存期间高度稳定。
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30.发明授权Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same 有权基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺公开(公告)号：US08524851B2
公开(公告)日：2013-09-03
申请号：US12805081
申请日：2010-07-12
申请人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
发明人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
IPC分类号： C08G77/60
CPC分类号： H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
摘要： A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
摘要翻译： 一种硅基硬掩模组合物，包括由式1表示的有机硅烷聚合物：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f （1）。
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