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    Semiconductor memory device and magneto-logic circuit
    21.
    发明授权
    Semiconductor memory device and magneto-logic circuit 有权
    半导体存储器件和磁逻辑电路

    公开(公告)号：US07755930B2

    公开(公告)日：2010-07-13

    申请号：US11976007

    申请日：2007-10-19

    申请人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    发明人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  Y10S977/935

    摘要： Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

    摘要翻译： 提供了根据多个输入值的逻辑状态的逻辑组合来改变磁感应电流的方向的半导体存储器件和磁电逻辑电路。 半导体存储器件包括电流驱动电路，磁感应层和电阻可变元件。 电流驱动电路根据输入值的逻辑状态的逻辑组合接收多个输入值并改变磁感应电流的方向。 磁感应层诱导具有根据磁感应电流的方向变化的方向的磁性。 电阻可变元件具有根据由磁感应层感应的磁性方向而变化的电阻。

    MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same
    23.
    发明授权
    MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same 有权
    包括由一个晶体管和两个磁性隧道结（MTJ）形成的晶胞的MRAM及其制造方法

    公开(公告)号：US07195929B2

    公开(公告)日：2007-03-27

    申请号：US11152346

    申请日：2005-06-15

    申请人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

    发明人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C15/02

    摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

    摘要翻译： 在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元， 与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中 在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

    Fixing unit and image forming apparatus having the same
    25.
    发明申请
    Fixing unit and image forming apparatus having the same 审中-公开
    固定单元和具有该固定单元的图像形成装置

    公开(公告)号：US20070020003A1

    公开(公告)日：2007-01-25

    申请号：US11483559

    申请日：2006-07-11

    申请人： Dong-kyun Kang ,  Jae-hyeok Jang ,  Seung-jun Lee

    发明人： Dong-kyun Kang ,  Jae-hyeok Jang ,  Seung-jun Lee

    IPC分类号： G03G15/20

    CPC分类号： G03G15/206

    摘要： A fixing unit and an image forming apparatus are provided. The fixing unit applies heat and pressure to a print medium on which a toner image is formed and fixes the toner image on the print medium. The fixing unit includes a heating roller including a heating source, at least two pressurizing rollers which are pressed against the heating roller along an outer circumferential surface of the heating roller, adhesion elastic bodies which elastically press the pressurizing rollers toward the heating roller at first locations of both ends of the pressurizing rollers, and correction elastic bodies which elastically press the pressurizing rollers at second locations of both ends of the pressurizing rollers in the opposite direction of the adhesion elastic bodies. With this structure, the fixing unit forms sufficient fixing nips to reliably fix toner images on the print medium while maintaining a compact structure. Furthermore, this structure increases the life span of the apparatus by minimizing deformation of the pressurizing roller.

    摘要翻译： 提供了一种定影单元和图像形成装置。 定影单元对形成有调色剂图像的打印介质施加热和压力，并将调色剂图像定影在打印介质上。 定影单元包括加热辊，该加热辊包括加热源，至少两个加压辊，其沿加热辊的外圆周表面压靠在加热辊上;粘合弹性体，其在第一位置向加热辊弹性地按压加压辊 以及校正弹性体，其在加压辊的两端的粘附弹性体的相反方向上的第二位置处弹性地按压加压辊。 利用这种结构，定影单元形成足够的固定夹头，以在保持紧凑结构的同时可靠地将调色剂图像定影在打印介质上。 此外，该结构通过使加压辊的变形最小化来增加设备的使用寿命。

    Film mode detecting apparatus and method thereof
    26.
    发明授权
    Film mode detecting apparatus and method thereof 失效

    公开(公告)号：US07039111B2

    公开(公告)日：2006-05-02

    申请号：US10265720

    申请日：2002-10-08

    申请人： Seung-jun Lee

    发明人： Seung-jun Lee

    IPC分类号： H04N7/12

    CPC分类号： H04N7/0115 ,  H04N5/147

    摘要： A film mode detecting apparatus and method for detecting a film mode by using a periodicity of motion vectors having high autocorrelativity. A motion vector calculating unit adds a size of motion vectors with respect to each field, thereby outputting a first computing value. A peak value eliminating unit detects a peak value from the first computing value, and if the peak value is detected, eliminates the peak value from the first computing value and outputs a resultant value. A mode detecting unit compares an autocorrelation coefficient with a predetermined threshold, thereby outputting a film mode detection signal. The autocorrelation coefficient is obtained from an input signal inputted from the peak value eliminating unit and a delayed signal delayed from the input signal. A mode determining unit determines a film mode when the film mode detection signal is input as often as, or more often than, a first reference value. A scene change detecting unit is further provided for detecting a scene change when the peak value is detected by the maximum value detecting unit, by comparing the detected peak value with a previously detected peak value, and outputting a scene change detection signal to the mode determining unit. In this case, the mode determining unit determines whether it is a film mode or not in accordance with the detection result from the scene change detecting unit based on a second reference value which is greater than the first reference value.

    MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same
    27.
    发明授权
    MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same 有权
    MRAM包括由一个晶体管和两个磁性隧道结（MTJS）形成的晶胞及其制造方法

    公开(公告)号：US06924520B2

    公开(公告)日：2005-08-02

    申请号：US10759544

    申请日：2004-01-20

    申请人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

    发明人： Wan-jun Park ,  Hyung-soon Shin ,  Seung-jun Lee

    IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  H01L29/76

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C15/02

    摘要： In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

    摘要翻译： 在MRAM及其制造方法中，MRAM包括半导体衬底，形成在半导体衬底上的晶体管，形成在半导体衬底上以覆盖晶体管的层间电介质，以及形成在层间电介质中的第一和第二MTJ单元， 与晶体管的漏极区域并联耦合，其中第一MTJ单元耦合到形成在层间电介质中的第一位线，并且第二MTJ单元耦合到形成在层间电介质中的第二位线，并且其中 在第一MTJ单元和晶体管的栅电极之间形成垂直于第一位线和第二位线的数据线。 MRAM提供高集成密度，足够的感测余量，高速操作和降低噪声，需要减少记录数据的电流并消除电压偏移。

    Magnetic random access memories and methods of operating the same
    28.
    发明授权
    Magnetic random access memories and methods of operating the same 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US08194439B2

    公开(公告)日：2012-06-05

    申请号：US12923376

    申请日：2010-09-17

    申请人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    发明人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C8/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements.

    摘要翻译： 一种自旋传递转矩磁随机存取存储器（STT-MRAM），包括：存储单元和参考单元，被配置为当读取存储在存储单元中的数据时作为参考。 存储单元包括：第一磁隧道结（MTJ）元件和连接到第一MTJ元件的第一晶体管。 参考单元包括：并联连接的第二和第三MTJ元件; 以及分别连接到第二和第三MTJ元件的第二和第三晶体管。 STT-MRAM还包括具有写入电路的控制电路，该写入电路被配置为向第二和第三MTJ元件提供具有相反方向的写入电流。

    Method of manufacturing a non-volatile memory device
    29.
    发明授权
    Method of manufacturing a non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US08187967B2

    公开(公告)日：2012-05-29

    申请号：US12458675

    申请日：2009-07-20

    申请人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

    发明人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11568

    摘要： A method of manufacturing a non-volatile memory device providing a semiconductor layer in which a cell region and a peripheral region are defined, sequentially forming a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer on the cell region and the peripheral region, forming a trench for exposing a portion of the first conductive layer of the peripheral region, wherein the trench is formed by removing portions of the second conductive layer and the second insulating layer in the peripheral region, performing a trimming operation for removing portions of the second conductive layer and the second insulating layer of the cell region, forming a spacer on a side surface of the trench, and forming a silicide layer that is electrically connected to the first conductive layer, wherein the silicide layer is formed by performing a silicidation process on the spacer.

    摘要翻译： 一种制造提供其中限定了单元区域和外围区域的半导体层的非易失性存储器件的方法，其顺序地形成在第一绝缘层，第一导电层，第二绝缘层和第二导电层上 形成用于暴露周边区域的第一导电层的一部分的沟槽，其中通过去除周边区域中的第二导电层和第二绝缘层的部分形成沟槽，进行修整 用于去除所述第二导电层和所述单元区域的所述第二绝缘层的部分的工作，在所述沟槽的侧表面上形成间隔物，以及形成电连接到所述第一导电层的硅化物层，其中所述硅化物层为 通过在间隔物上进行硅化处理而形成。