Abstract:
According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.
Abstract:
In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.
Abstract:
According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.
Abstract:
Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state
Abstract:
A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.
Abstract:
Disclosed herein is a muffler of a scroll compressor. The muffler includes a first muffler having a pair of chambers defined above an outlet of a fixed scroll to communicate with the outlet and a gas passage hole formed at the center of an upper end thereof, and a second muffler located around the first muffler to be spaced apart from the gas passage hole of the first muffler and having a chamber including one or more guidance paths of the fixed scroll. The muffler can achieve reduction of operational noise, sufficient separation of oil contained in discharge gas, and efficient isolation between a discharge pressure inside the muffler and outside suction pressure.
Abstract:
Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.
Abstract:
In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.
Abstract:
Disclosed is a method of registering only an authorized optical network terminal among a plurality of optical network terminals with the same serial number, in an optical line terminal, using a public key encryption algorithm, in a Gigabit Passive Optical Network (GPON). According to an exemplary aspect, a GPON system encrypts a physical layer OAM message transmitted/received for serial number registration of an optical network terminal, using a key distributed according to a public key encryption algorithm, and authenticates registration of the optical network terminal using the encrypted physical layer OAM message. Accordingly, it is possible to securely authenticate registration of an authorized optical network terminal and block registration of unauthorized optical network terminals.
Abstract:
A burst mode optical repeater is provided. The burst mode optical repeater receives optical signals, which are transmitted from a plurality of optical network units (ONUs) in a passive optical network (PON) to a central office using a time division multiplexing access (TDMA) method, and relays the received optical signals using an optical-electrical-optical (OEO) method. Since the burst mode optical repeater can be installed anywhere between an optical line terminal (OLT) and the ONUs, the number of subscribers and transmission range that can be supported by a corresponding network can be increased.