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公开(公告)号：US07773931B2
公开(公告)日：2010-08-10
申请号：US12104699
申请日：2008-04-17
Applicant: Chang-hoon Jung , Dong-woo Lee , Tae-gyu Kim , Su-ho Shin , Dong-jin Seol , Hwan-hee Kim
Inventor： Chang-hoon Jung , Dong-woo Lee , Tae-gyu Kim , Su-ho Shin , Dong-jin Seol , Hwan-hee Kim
IPC: G03G15/20
CPC classification number: G03G15/2064 , G03G2215/2035
Abstract: A fusing device includes a pressure unit, a belt unit to rotate in outer contact with the pressure unit, a nip forming unit to form a nip over a contact portion between the pressure unit and the belt unit, a heating unit to heat the nip forming unit and the belt unit, and a support unit to press and support the nip forming unit constantly and having a plurality of heat transmission portions defined in a parallelogrammic shape of an oblique direction with respect to a traveling direction of the belt unit.
Abstract translation: 定影装置包括压力单元，与压力单元外部旋转的带单元，在压力单元和带单元之间的接触部分上形成辊隙的辊隙形成单元，用于加热辊隙成形的加热单元 单元和带单元，以及支撑单元，其压缩和支撑辊隙形成单元，并且具有相对于带单元的行进方向以倾斜方向限定的多个传热部。
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22.发明授权Shift reactor, fuel cell system employing the same, and operating method of the same 失效换档反应器，采用相同的燃料电池系统及其运行方法公开(公告)号：US07758984B2
公开(公告)日：2010-07-20
申请号：US11496502
申请日：2006-08-01
Applicant: Soonho Kim , Doohwan Lee , Hyun-chul Lee , Dong-woo Lee , Tae-sang Park
Inventor： Soonho Kim , Doohwan Lee , Hyun-chul Lee , Dong-woo Lee , Tae-sang Park
CPC classification number: C01B3/48 , B01J8/0221 , B01J2208/00522 , B01J2208/00716 , C01B2203/0205 , C01B2203/0283 , C01B2203/066 , C01B2203/0838 , C01B2203/1041 , C01B2203/1047 , C01B2203/107 , C01B2203/1076 , C01B2203/127 , C01B2203/1604 , H01M8/0618 , H01M8/0668 , H01M8/0675 , Y02E60/364
Abstract: A shift reactor for fuel cells, a fuel cell system employing the same, and an operating method of the same are provided. More particularly, a shift reactor for fuel cells is filled with a shift catalyst and includes an inlet through which reactants flow into the shift reactor and an outlet through which products flow out of the shift reactor. An oxygen supply duct and a valve capable of regulating the oxygen supply are positioned at the outlet side of the shift reactor. The oxygen supply allows for the temperature of the shift catalyst to be increased rapidly at startup, thereby significantly shortening the startup time of the shift reactor and thereby contributing to an improved practical operation of the fuel cell system.
Abstract translation: 提供了一种用于燃料电池的变换反应器，使用该变换反应器的燃料电池系统及其操作方法。 更具体地，用于燃料电池的变换反应器填充有变换催化剂，并且包括入口，反应物通过该入口流入变换反应器和出口，产物通过该出口流出变换反应器。 氧气供应管道和能够调节供氧的阀门位于变换反应器的出口侧。 氧供给允许变速催化剂的温度在起动时快速增加，从而显着缩短变换反应器的启动时间，从而有助于改进燃料电池系统的实际操作。
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23.发明授权Phase-change memory device including nanowires and method of manufacturing the same 有权包括纳米线的相变存储器件及其制造方法公开(公告)号：US07569846B2
公开(公告)日：2009-08-04
申请号：US11429744
申请日：2006-05-08
Applicant: Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
Inventor： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
IPC: H01L47/00
CPC classification number: H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/16 , Y10S977/762
Abstract: A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.
Abstract translation: 包括多个纳米线的相变随机存取存储器（PRAM）器件及其制造方法包括：包括多个接触插塞的下部结构; 所述纳米线从限定所述接触插塞的相应末端的表面延伸到所述接触插塞中; 以及形成在纳米线顶部的相变层。 因此，由PRAM器件消耗的复位或设定电流显着降低。
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公开(公告)号：US20090110451A1
公开(公告)日：2009-04-30
申请号：US12104699
申请日：2008-04-17
Applicant: Chang-hoon Jung , Dong-woo Lee , Tae-gyu Kim , Su-ho Shin , Dong-jin Seol , Hwan-hee Kim
Inventor： Chang-hoon Jung , Dong-woo Lee , Tae-gyu Kim , Su-ho Shin , Dong-jin Seol , Hwan-hee Kim
IPC: G03G15/20
CPC classification number: G03G15/2064 , G03G2215/2035
Abstract: A fusing device includes a pressure unit, a belt unit to rotate in outer contact with the pressure unit, a nip forming unit to form a nip over a contact portion between the pressure unit and the belt unit, a heating unit to heat the nip forming unit and the belt unit, and a support unit to press and support the nip forming unit constantly and having a plurality of heat transmission portions defined in a parallelogrammic shape of an oblique direction with respect to a traveling direction of the belt unit.
Abstract translation: 定影装置包括压力单元，与压力单元外部旋转的带单元，在压力单元和带单元之间的接触部分上形成辊隙的辊隙形成单元，用于加热辊隙成形的加热单元 单元和带单元，以及支撑单元，其压缩和支撑辊隙形成单元，并且具有相对于带单元的行进方向以倾斜方向限定的多个传热部。
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公开(公告)号：US07492892B2
公开(公告)日：2009-02-17
申请号：US11256168
申请日：2005-10-24
Applicant: Dong-woo Lee , Young-ki Kim , Ki-taek Kim , Dong-ok Kwak , Seong-woon Booh , Jin-woo Cho
Inventor： Dong-woo Lee , Young-ki Kim , Ki-taek Kim , Dong-ok Kwak , Seong-woon Booh , Jin-woo Cho
CPC classification number: H04M1/0237 , H04M1/0233
Abstract: A slide opening/closing type mobile device includes a body section including a guide section that has a pair of long holes and is configured so that an interval between the pair of long holes becomes smaller at first, as it goes from one ends towards the other ends of the long holes, and then, becomes larger based on certain starting points; a slider provided with guide rollers movably inserted in the pair of long holes of the guide section in a state of being elastically biased to the outside; a rotation plate rotatably mounted on the slider; and a display section mounted on the rotation plate. The display section is slidable upward and downward with respect to the body section by the slider, and rotates at a predetermined angle by the rotation plate.
Abstract translation: 滑动打开/关闭型移动装置包括主体部分，该主体部分包括具有一对长孔的引导部分，并且构造成使得一对长孔之间的间隔首先变小，因为它从一端朝向另一端 长孔的端部，然后，基于某些起点变大; 滑动件，其设置有以可弹性地插入到引导部的一对长孔中的引导辊，弹性偏置到外部; 可旋转地安装在滑块上的旋转板; 以及安装在旋转板上的显示部。 显示部通过滑块相对于主体部分上下滑动，并通过旋转板以预定角度旋转。
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Patent Agency Ranking
公开(公告)号：US07423704B2
公开(公告)日：2008-09-09
申请号：US11123200
申请日：2005-05-06
Applicant: Jin-woo Cho , Seong-woon Booh , Young-ki Kim , Dong-woo Lee , Dong-ok Kwak , Ki-taek Kim
Inventor： Jin-woo Cho , Seong-woon Booh , Young-ki Kim , Dong-woo Lee , Dong-ok Kwak , Ki-taek Kim
IPC: G02F1/1333 , H04M1/02
CPC classification number: G02F1/133308 , G02F2001/133317 , G02F2201/465 , G02F2201/503
Abstract: An LCD module is provided for use in a hand-held portable phone, which is eminently improved in impact-resistant property. The LCD module includes an LCD panel, a mold frame for receiving and supporting the LCD panel, and a chassis for reinforcing the rigidity of the mold frame, wherein the mold frame and the chassis are integrally insert-molded.
Abstract translation: 提供了用于手持便携式电话中的LCD模块，其在抗冲击性方面得到了显着改善。 LCD模块包括LCD面板，用于接收和支撑LCD面板的模架，以及用于增强模架刚性的底座，其中模框和底座被一体地嵌入成型。
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公开(公告)号：US20080049520A1
公开(公告)日：2008-02-28
申请号：US11730800
申请日：2007-04-04
Applicant: Shin-wook Kang , Dong-woo Lee
Inventor： Shin-wook Kang , Dong-woo Lee
IPC: G11C11/40
CPC classification number: G11C16/10
Abstract: Provided are a flash memory system and a programming method performed in the flash memory system. The flash memory system includes a buffer unit including a plurality of buffers, and temporarily storing data transmitted by a host; a plurality of channel units each including at least one flash memory chip that includes a plurality of memory cell arrays; and a control unit which controls the data stored in the buffer unit to be sequentially transmitted to the channel units and the transmitted data to be recorded to the memory cell arrays of the flash memory chips in the channel units.
Abstract translation: 提供了一种在闪存系统中执行的闪存系统和编程方法。 闪速存储器系统包括：缓冲单元，包括多个缓冲器，并临时存储主机发送的数据; 多个通道单元，每个通道单元包括至少一个包括多个存储单元阵列的闪存芯片; 以及控制单元，其将存储在缓冲器单元中的数据顺序地发送到频道单元，并将发送的数据记录到频道单元中的闪存芯片的存储单元阵列。
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28.发明申请公开(公告)号：US20080049513A1
公开(公告)日：2008-02-28
申请号：US11713638
申请日：2007-03-05
Applicant: Seong-hun Jeong , Houng-sog Min , Dong-woo Lee , Shin-wook Kang , Hyang-suk Park
Inventor： Seong-hun Jeong , Houng-sog Min , Dong-woo Lee , Shin-wook Kang , Hyang-suk Park
IPC: G11C16/10
CPC classification number: G11C16/102 , G11C2216/14
Abstract: A method and apparatus are provided for programming a non-volatile data storage device, in which a fast write operation can be performed using a plurality of page buffers included in the non-volatile data storage device when the write operation is performed in a way of using interleaving for each channel in a multi-channel system using a plurality of non-volatile data storage devices. The method includes programming data in a memory cell array included in the non-volatile data storage device using a page buffer selected from among a plurality of page buffers included in the non-volatile data storage device and performing a setup operation for loading data using another page buffer, which is different from the page buffer selected during the programming.
Abstract translation: 提供了一种用于对非易失性数据存储装置进行编程的方法和装置，其中当以非法数据存储装置的方式执行写入操作时，可以使用包括在非易失性数据存储装置中的多个页缓冲器执行快速写入操作 使用多个非易失性数据存储设备在多信道系统中对每个信道进行交织。 该方法包括使用从非易失性数据存储装置中包括的多个页缓冲器中选择的页缓冲器来编程包括在非易失性数据存储装置中的存储单元阵列中的数据，并执行用于使用另一个装载数据加载数据的设置操作 页面缓冲区，与编程期间选择的页面缓冲区不同。
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29.发明申请公开(公告)号：US20070070782A1
公开(公告)日：2007-03-29
申请号：US11515799
申请日：2006-09-06
Applicant: Dong-woo Lee , Jung-yong Choi , Jong-hyun Choi
Inventor： Dong-woo Lee , Jung-yong Choi , Jong-hyun Choi
IPC: G11C8/00
CPC classification number: G11C8/06 , G11C7/1078 , G11C7/1084 , G11C7/1087 , G11C7/109 , G11C7/225
Abstract: Provided are an input buffer of a memory device, a memory controller, and a memory system making use thereof. The input buffer of a memory device is enabled or disabled in response to a first signal showing chip selection information and a second signal showing power down information, and the input buffer is enabled only when the second signal shows a non-power down mode and the first signal shows a chip selection state. The input buffer is at least one selected from the group consisting of a row address strobe input buffer, a column address strobe input buffer, and an address input buffer.
Abstract translation: 提供了存储器件，存储器控制器和使用它的存储器系统的输入缓冲器。 响应于表示芯片选择信息的第一信号和表示掉电信息的第二信号，存储器件的输入缓冲器被使能或禁止，并且仅当第二信号显示非掉电模式时，输入缓冲器被使能，并且 第一信号显示芯片选择状态。 输入缓冲器是从由行地址选通输入缓冲器，列地址选通输入缓冲器和地址输入缓冲器组成的组中选择的至少一个。
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30.发明申请Phase-change memory device including nanowires and method of manufacturing the same 有权包括纳米线的相变存储器件及其制造方法公开(公告)号：US20070012986A1
公开(公告)日：2007-01-18
申请号：US11429744
申请日：2006-05-08
Applicant: Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
Inventor： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
IPC: H01L21/8242 , H01L29/94
CPC classification number: H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/16 , Y10S977/762
Abstract: a phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.
Abstract translation: 包括多个纳米线的相变随机存取存储器（PRAM）器件及其制造方法包括：包括多个接触插塞的下部结构; 所述纳米线从限定所述接触插塞的相应末端的表面延伸到所述接触插塞中; 以及形成在纳米线顶部的相变层。 因此，由PRAM器件消耗的复位或设定电流显着降低。
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