公开(公告)号：US20120138985A1

公开(公告)日：2012-06-07

申请号：US13208658

申请日：2011-08-12

Applicant: Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

Inventor： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

公开(公告)号：US20120056527A1

公开(公告)日：2012-03-08

申请号：US13034137

申请日：2011-02-24

Applicant: Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

Inventor： Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

IPC: H01J1/62

CPC classification number: C09K11/7734 ,  C09K11/7728 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1−x1Eux1)aSibAlOcNd  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements),an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r (μm)≧D(r+1000) (μm).  (2)

Abstract translation: 根据一个实施例的发光器件包括板; 安装在所述板上的发光元件，发射波长为250nm至500nm的光; 形成在元件上的红色荧光层，包括由等式（1）表示的具有直径为r的半圆形形状的红色荧光体; （M1-x1Eux1）aSibAlOcNd（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，Al（Aliminum）以外的IIIB族元素，稀土元素 和IVB族元素），形成在红色荧光层上的由透明树脂制成的具有直径D的半圆形状的中间层; 以及形成在具有半圆形状的绿色荧光体的中间层上形成的绿色荧光体层。 直径r和直径D之间的关系满足式（2）：2.0r（μm）≥D（r + 1000）（μm）。 （2）

公开(公告)号：US20120056525A1

公开(公告)日：2012-03-08

申请号：US13033911

申请日：2011-02-24

Applicant: Kunio ISHIDA ,  Iwao MITSUISHI ,  Ryosuke HIRAMATSU ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Naotoshi MATSUDA ,  Aoi OKADA ,  Shinya NUNOUE

Inventor： Kunio ISHIDA ,  Iwao MITSUISHI ,  Ryosuke HIRAMATSU ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Naotoshi MATSUDA ,  Aoi OKADA ,  Shinya NUNOUE

IPC: H01J1/63 ,  H01J1/62

CPC classification number: H05B33/14 ,  H01L33/20 ,  H01L33/504 ,  H01L33/508

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.

Abstract translation: 根据一个实施例的发光器件包括发射波长为250nm至500nm的光的发光元件; 多个红色荧光层，其形成在发光元件上方以包括红色荧光材料，红色荧光层以预定间隔设置; 以及形成在发光元件上方以包括绿色荧光材料的多个绿色荧光层，发光元件和绿色荧光层之间的距离大于发光元件和红色荧光层之间的距离。

公开(公告)号：US20110216798A1

公开(公告)日：2011-09-08

申请号：US12873821

申请日：2010-09-01

Applicant: Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

Inventor： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

IPC: H01S5/22 ,  H01S5/323 ,  H01L33/30

CPC classification number: H01L33/30 ,  H01S5/22 ,  H01S5/323

Abstract: Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

Abstract translation: 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。