公开(公告)号：US08791512B2

公开(公告)日：2014-07-29

申请号：US13241666

申请日：2011-09-23

Applicant: Francois Roy ,  Julien Michelot

Inventor： Francois Roy ,  Julien Michelot

IPC: H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14679 ,  H01L31/112

Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.

Abstract translation: 成像装置形成在半导体衬底中。 该装置包括矩阵阵列的光斑。 每个光斑由用于存储电荷的半导体区域，用于读取对所述光斑特定的电荷的半导体区域和电荷转移电路构成，以使得能够在电荷存储区域和电荷读取区域之间传输电荷。 每个光斑还包括至少一个埋入的第一电极。 该埋置的第一电极的至少一部分界定电荷存储区域的至少一部分。 每个光电子的电荷转移电路包括至少一个第二埋电极。

公开(公告)号：US20120153128A1

公开(公告)日：2012-06-21

申请号：US13333885

申请日：2011-12-21

Applicant: Francois Roy ,  Flavien Hirigoyen ,  Julien Michelot

Inventor： Francois Roy ,  Flavien Hirigoyen ,  Julien Michelot

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.

Abstract translation: 制造图像传感器的方法包括以下步骤：在半导体衬底中形成至少两个光斑; 在光斑之间形成沟槽; 在至少沟槽的侧壁上形成薄衬垫; 在沟槽中沉积具有第一折射率的导电材料; 以及形成由所述导电材料围绕并且具有低于所述沟槽中的导电材料内的所述第一折射率的第二折射率的区域。

公开(公告)号：US20100200943A1

公开(公告)日：2010-08-12

申请号：US12798977

申请日：2010-04-15

Applicant: Francois Roy ,  Thomas Girault

Inventor： Francois Roy ,  Thomas Girault

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14625 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/4298 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685

Abstract: An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.

公开(公告)号：US07709916B2

公开(公告)日：2010-05-04

申请号：US11335908

申请日：2006-01-13

Applicant: Jens Prima ,  Francois Roy

Inventor： Jens Prima ,  Francois Roy

IPC: H01L31/00 ,  H01L51/40

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/03762

Abstract: An optical semiconductor device includes, in a zone (5), a structure of photosensitive diodes including a matrix (6) of lower electrodes (7), an intermediate layer (9) made of a photosensitive material formed on the matrix of lower electrodes and at least one upper electrode (10a) formed on the intermediate layer, in which an electrical connection (3a) includes at least one electrical contact pad (7a) and at least one electrical connection pad (16a) are produced beneath the intermediate layer, at least one electrical connection via (14) is produced through the intermediate layer and connects the upper electrode to the electrical contact pad and at least one well (15a) is formed outside the zone (5) and passes through at least the intermediate layer (9) in order to expose the electrical connection pad (16a). Also provided is a process for fabricating such a device.

Abstract translation: 光学半导体器件在区域（5）中包括感光二极管的结构，该感光二极管包括下电极（7）的基体（6），由形成在下电极的基体上的感光材料制成的中间层（9） 形成在中间层上的至少一个上电极（10a），其中电连接（3a）包括至少一个电接触焊盘（7a）和至少一个电连接焊盘（16a），在中间层下面，在 通过中间层产生至少一个电连接（14），并将上部电极连接到电接触焊盘，并且至少一个阱（15a）形成在区域（5）的外部，并至少穿过中间层（9） ）以暴露电连接垫（16a）。 还提供了制造这种装置的方法。

公开(公告)号：US20090008730A1

公开(公告)日：2009-01-08

申请号：US12157936

申请日：2008-06-13

Applicant: Francois Roy ,  Tarek Lule ,  Samir Guerroudj

Inventor： Francois Roy ,  Tarek Lule ,  Samir Guerroudj

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02162 ,  H01L27/14621 ,  H01L27/14685

Abstract: The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.

Abstract translation: 本公开涉及包括至少一个感光单元的集成电路。 单元包括感光元件，与所述感光元件相关联的输入面，位于通向感光元件的至少一个光路中的光学滤光器和位于感光元件和输入面之间的互连部件。 光学滤光器设置在感光元件和最靠近输入面的互连部件的表面之间。 特别地，滤光器可以布置在互连部分内。 本公开还提出使用包含硫化铈或至少一种金属氧化物的玻璃来形成过滤器。

公开(公告)号：US20070158712A1

公开(公告)日：2007-07-12

申请号：US11481393

申请日：2006-07-05

Applicant: Damien Lenoble ,  Francois Roy

Inventor： Damien Lenoble ,  Francois Roy

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14601 ,  H01L27/14609 ,  H01L27/14689

Abstract: An integrated circuit includes at least one photodiode associated with a transfer transistor. The photodiode is formed with an upper pn junction. The transfer transistor includes a lateral spacer located on a side facing the photodiode. An upper layer of the upper pn junction includes a lateral surface extension lying beneath the spacer. A lower layer of the upper pn junction forms a source/drain region for the transfer transistor. An edge of the lateral surface extension lying beneath the spacer and adjacent a gate of the transfer transistor contacts a substrate of the integrated circuit. An oxide layer insulating the gate from the underlying substrate does not overlie the lateral surface extension of the upper layer underneath of the lateral spacer.

Abstract translation: 集成电路包括与转移晶体管相关联的至少一个光电二极管。 光电二极管形成有上部pn结。 转移晶体管包括位于面向光电二极管的一侧的侧向间隔物。 上部pn结的上层包括位于间隔物下方的侧表面延伸部。 上pn结的下层形成用于转移晶体管的源/漏区。 位于间隔物下方并且邻近转移晶体管的栅极的侧表面延伸部分的边缘与集成电路的基板接触。 将栅极与下面的衬底绝缘的氧化物层不覆盖在侧面间隔物下方的上层的侧表面延伸。

公开(公告)号：US20070114627A1

公开(公告)日：2007-05-24

申请号：US11602053

申请日：2006-11-20

Applicant: Francois Roy ,  Thomas Girault ,  Yann Marcellier ,  Caroline Bringolf-Penner

Inventor： Francois Roy ,  Thomas Girault ,  Yann Marcellier ,  Caroline Bringolf-Penner

IPC: H01L27/14

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14689

Abstract: A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector comprises at least two photodiodes and comprises a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.

Abstract translation: 在第一导电类型的轻掺杂衬底中制成单片形式的光电探测器。 该光电检测器包括至少两个光电二极管并且包括比至少在两个光电二极管之间延伸的衬底更重掺杂的第一导电类型的第一区域; 以及第一导电类型的第二区域，其比衬底更重掺杂，并且在第一区域的第一区域下方和在两个光电二极管中的一个之下延伸，第一区域或第二区域具有第一区域，将衬底部分限定在 所述两个光电二极管中的一个以及具有第一区域的第二区域限定在两个光电二极管中的另一个的水平处的附加衬底部分。

公开(公告)号：US20060244090A1

公开(公告)日：2006-11-02

申请号：US11400728

申请日：2006-04-07

Applicant: Francois Roy ,  Arnaud Tournier ,  Yann Marcellier

Inventor： Francois Roy ,  Arnaud Tournier ,  Yann Marcellier

IPC: H01L31/06

CPC classification number: H01L21/26586 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0352

Abstract: An integrated circuit includes a photodiode produced from the formation of a stack of three semiconductor layers. An overdoped storage zone is formed in a second (middle) layer of the stack. A read transistor connected to the photodiode includes a gate formed above the stack and source/drain regions formed in a third (upper) layer of the stack. A first (bottom) layer of the stack forms a floating substrate. During integrated circuit fabrication, an implantation mask is placed above the gate and the stack having an opening which exposes a part of the gate and a part of the upper surface of the stack lying beside the exposed part of the gate. An oblique implantation of dopants is then made through the opening in the mask to form the storage zone such that it is at least partially located underneath the gate area of the read transistor.

Abstract translation: 集成电路包括由三层半导体层的堆叠形成的光电二极管。 在堆叠的第二（中间）层中形成过量的储存区。 连接到光电二极管的读取晶体管包括形成在堆叠上方的栅极和形成在堆叠的第三（上））层中的源极/漏极区域。 堆叠的第一（底部）层形成浮动衬底。 在集成电路制造期间，将注入掩模放置在栅极上方，并且堆叠具有露出栅极的一部分并且堆叠的上表面的一部分位于栅极的暴露部分旁边的开口。 然后通过掩模中的开口进行掺杂剂的倾斜注入以形成存储区，使得其至少部分地位于读取晶体管的栅极区域的下方。

公开(公告)号：US4997784A

公开(公告)日：1991-03-05

申请号：US471418

申请日：1990-01-29

Applicant: Yves Thenoz ,  Francois Roy

Inventor： Yves Thenoz ,  Francois Roy

IPC: H04N5/335 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14887

Abstract: The disclosed photosensitive matrix comprises, in a standard way, a P type semiconductor substrate, an N type channel layer separated by narrow insulating zones into a plurality of columns and, on a thin layer of insulating oxide placed on the channel layer, a network of transfer grids extending perpendicularly to the insulating zones, dividing the columns into a large number of "pixels". According to the invention, the matrix has, between the substrate and the channel layer, a weakly doped P type base layer, in which are buried anti-blooming diodes consisting of a narrow, strong doped N type drain extending in a direction parallel to the insulation zones. Beneath the drain, there is a strongly doped, P type protective screen. The arrangement gives an optical aperture of the matrix close to unity and a spectral response that is improved towards the red side of the spectrum owing to the thickness of the base layer.

公开(公告)号：US20180072093A1

公开(公告)日：2018-03-15

申请号：US15796783

申请日：2017-10-28

Applicant: Francois Roy

Inventor： Francois Roy

IPC: B44D3/18

Abstract: The invention relates to a device for tensioning a canvas on a frame, which is for assembling two bars the ends of which comprise a groove. The device comprises: an optional sheath intended to be immobilized in a groove; a spacer comprising a central portion from which extend two lateral portions each having a bearing face coming to abut against the bottom of the sheath; a tensioner comprising a central portion from which extend securing means for securing the tensioner to the bars, via the sheath; a connecting member for connecting the spacer to the tensioner, and means for bringing the spacer closer to the tensioner, wherein the spacer being brought closer to the tensioner will cause each bar to translate along its longitudinal axis so as to space the bars apart from each other while keeping them perpendicular to each other.