公开(公告)号：US07709916B2

公开(公告)日：2010-05-04

申请号：US11335908

申请日：2006-01-13

申请人： Jens Prima ,  Francois Roy

发明人： Jens Prima ,  Francois Roy

IPC分类号： H01L31/00 ,  H01L51/40

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/03762

摘要： An optical semiconductor device includes, in a zone (5), a structure of photosensitive diodes including a matrix (6) of lower electrodes (7), an intermediate layer (9) made of a photosensitive material formed on the matrix of lower electrodes and at least one upper electrode (10a) formed on the intermediate layer, in which an electrical connection (3a) includes at least one electrical contact pad (7a) and at least one electrical connection pad (16a) are produced beneath the intermediate layer, at least one electrical connection via (14) is produced through the intermediate layer and connects the upper electrode to the electrical contact pad and at least one well (15a) is formed outside the zone (5) and passes through at least the intermediate layer (9) in order to expose the electrical connection pad (16a). Also provided is a process for fabricating such a device.

摘要翻译： 光学半导体器件在区域（5）中包括感光二极管的结构，该感光二极管包括下电极（7）的基体（6），由形成在下电极的基体上的感光材料制成的中间层（9） 形成在中间层上的至少一个上电极（10a），其中电连接（3a）包括至少一个电接触焊盘（7a）和至少一个电连接焊盘（16a），在中间层下面，在 通过中间层产生至少一个电连接（14），并将上部电极连接到电接触焊盘，并且至少一个阱（15a）形成在区域（5）的外部，并至少穿过中间层（9） ）以暴露电连接垫（16a）。 还提供了制造这种装置的方法。

公开(公告)号：US20120306035A1

公开(公告)日：2012-12-06

申请号：US13483274

申请日：2012-05-30

申请人： Francois Roy ,  Francois Leverd ,  Jens Prima

发明人： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

摘要翻译： 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US20110140220A1

公开(公告)日：2011-06-16

申请号：US12963792

申请日：2010-12-09

申请人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

发明人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

摘要： A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

摘要翻译： 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US20090140363A1

公开(公告)日：2009-06-04

申请号：US11335908

申请日：2006-01-13

申请人： Jens Prima ,  Francois Roy

发明人： Jens Prima ,  Francois Roy

IPC分类号： H01L31/0216

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/03762

摘要： An optical semiconductor device includes, in a zone (5), a structure of photosensitive diodes including a matrix (6) of lower electrodes (7), an intermediate layer (9) made of a photosensitive material formed on the matrix of lower electrodes and at least one upper electrode (10a) formed on the intermediate layer, in which an electrical connection (3a) includes at least one electrical contact pad (7a) and at least one electrical connection pad (16a) are produced beneath the intermediate layer, at least one electrical connection via (14) is produced through the intermediate layer and connects the upper electrode to the electrical contact pad and at least one well (15a) is formed outside the zone (5) and passes through at least the intermediate layer (9) in order to expose the electrical connection pad (16a). Also provided is a process for fabricating such a device.

摘要翻译： 光学半导体器件在区域（5）中包括感光二极管的结构，该感光二极管包括下电极（7）的基体（6），由形成在下电极的基体上的感光材料制成的中间层（9） 形成在中间层上的至少一个上电极（10a），其中电连接（3a）包括至少一个电接触焊盘（7a）和至少一个电连接焊盘（16a），在中间层下面，在 通过中间层产生至少一个电连接（14），并将上部电极连接到电接触焊盘，并且至少一个阱（15a）形成在区域（5）的外部，并至少穿过中间层（9） ）以暴露电连接垫（16a）。 还提供了制造这种装置的方法。

公开(公告)号：US08847344B2

公开(公告)日：2014-09-30

申请号：US13483274

申请日：2012-05-30

申请人： Francois Roy ,  Francois Leverd ,  Jens Prima

发明人： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

摘要翻译： 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US08524522B2

公开(公告)日：2013-09-03

申请号：US12963792

申请日：2010-12-09

申请人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

发明人： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L31/0232 ,  H01L27/148

CPC分类号： H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

摘要： A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

摘要翻译： 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US09681077B2

公开(公告)日：2017-06-13

申请号：US13546882

申请日：2012-07-11

申请人： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

发明人： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

IPC分类号： H01L29/06 ,  H04N5/372

CPC分类号： H04N5/372 ,  H01L29/06 ,  H01L29/0603

摘要： A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

公开(公告)号：US09099366B2

公开(公告)日：2015-08-04

申请号：US13529045

申请日：2012-06-21

申请人： Francois Roy ,  Julien Michelot

发明人： Francois Roy ,  Julien Michelot

IPC分类号： H01L27/146 ,  H01L31/0352

CPC分类号： H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L31/0352

摘要： A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.

摘要翻译： 在半导体衬底中形成有一个光电子结构，并包括一个限制在与衬底表面正交的方向上的光电二极管。 光电二极管包括用于存储形成在具有第一导电类型的上半导体区域中的电荷的半导体区，并且包括与第一导电类型相反的第二导电类型的主阱，并且在与第一导电类型的表面平行的第一方向上横向固定 基质。 光电二极管还包括另外的半导体区域，该半导体区域包括具有第二导电类型的另外的阱，该第二导电类型被埋在主阱中并与主阱接触。

公开(公告)号：US20130015910A1

公开(公告)日：2013-01-17

申请号：US13546882

申请日：2012-07-11

申请人： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

发明人： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

IPC分类号： H01L31/02 ,  H03K3/01

CPC分类号： H04N5/372 ,  H01L29/06 ,  H01L29/0603

摘要： A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

摘要翻译： 一种用于转移在由至少两个平行沟槽限定的半导体层的一部分中产生的电荷的装置，每个沟槽包括彼此绝缘的半导体层的纵向至少第一和第二导电区域，包括重复 将第一导电区域偏压到第一电压的第一步骤，以在位于第一区域之间的该部分的区域中形成孔的体积积累，而第二导电区域被偏压到大于第一电压的第二电压， 以及将第一区域偏置到第二电压和第二区域到第一电压的第二步骤。

公开(公告)号：US20120211804A1

公开(公告)日：2012-08-23

申请号：US13398287

申请日：2012-02-16

申请人： Julien MICHELOT ,  Francois Roy ,  Frederic Lalanne

发明人： Julien MICHELOT ,  Francois Roy ,  Frederic Lalanne

IPC分类号： H01L31/02

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14641 ,  H01L27/14643

摘要： A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.

摘要翻译： 光电晶体可以在半导体衬底中包括在包括电荷存储区的衬底的深度方向上夹持的光电二极管以及用于传送存储的电荷的电荷转移晶体管。 电荷存储区可以包括在通过电荷转移晶体管的第一方向上的夹持，所述电荷转移晶体管限定与电荷转移晶体管相邻的收缩区。