公开(公告)号：US10236256B2

公开(公告)日：2019-03-19

申请号：US15899685

申请日：2018-02-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xunyuan Zhang ,  Shao Beng Law

IPC: H01L23/528 ,  H01L21/768

Abstract: Methods of forming self-aligned cuts and structures formed with self-aligned cuts. A dielectric layer is formed on a metal hardmask layer, and a mandrel is formed on the dielectric layer. A cut is formed that extends through the dielectric layer to the metal hardmask layer. A section of a metal layer is formed on an area of the metal hardmask layer exposed by the cut in the dielectric layer. After the metal layer is formed, a spacer is formed on a vertical sidewall of the mandrel.

公开(公告)号：US20190027401A1

公开(公告)日：2019-01-24

申请号：US15653638

申请日：2017-07-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： James McMahon ,  Ryan S. Smith ,  Nicholas V. LiCausi ,  Errol Todd Ryan ,  Xunyuan Zhang ,  Shao Beng Law

IPC: H01L21/768 ,  H01L23/522

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to dielectric repair for via and skip via structures and methods of manufacture. The method includes: etching a via structure in a dielectric layer; repairing sidewalls of the via structure with a repair agent; and extending the via structure with an additional etching into a lower dielectric layer to form a skip via structure exposing a metallization layer.

公开(公告)号：US20180301413A1

公开(公告)日：2018-10-18

申请号：US15899685

申请日：2018-02-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xunyuan Zhang ,  Shao Beng Law

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76804 ,  H01L21/7685 ,  H01L21/76883

Abstract: Methods of forming self-aligned cuts and structures formed with self-aligned cuts. A dielectric layer is formed on a metal hardmask layer, and a mandrel is formed on the dielectric layer. A cut is formed that extends through the dielectric layer to the metal hardmask layer. A section of a metal layer is formed on an area of the metal hardmask layer exposed by the cut in the dielectric layer. After the metal layer is formed, a spacer is formed on a vertical sidewall of the mandrel.

公开(公告)号：US20180144979A1

公开(公告)日：2018-05-24

申请号：US15359037

申请日：2016-11-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shao Beng Law ,  Genevieve Beique ,  Frank W. Mont ,  Lei Sun ,  Xunyuan Zhang

IPC: H01L21/768 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/76877 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76802

Abstract: Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

公开(公告)号：US09905424B1

公开(公告)日：2018-02-27

申请号：US15494803

申请日：2017-04-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shao Beng Law

IPC: H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76877

Abstract: Methods of forming self-aligned non-mandrel cuts during the fabrication of an interconnect structure. A first dielectric hardmask layer is formed on a metal hardmask layer. A plurality of mandrels are formed on the first dielectric hardmask layer, and a plurality of spacers are formed on the first dielectric hardmask layer. The spacers are located adjacent to the mandrels. A first sacrificial layer is formed that fills spaces between the spacers, and a second dielectric hardmask layer is formed on the first sacrificial layer, the spacers, and the mandrels. A plurality of sections of a second sacrificial layer are formed on the second dielectric hardmask layer and cover the second dielectric hardmask layer over a plurality of areas that are used to form the non-mandrel cuts.