公开(公告)号：US10056292B2

公开(公告)日：2018-08-21

申请号：US15359037

申请日：2016-11-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shao Beng Law ,  Genevieve Beique ,  Frank W. Mont ,  Lei Sun ,  Xunyuan Zhang

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/76816 ,  H01L21/0337

Abstract: Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

公开(公告)号：US10802393B2

公开(公告)日：2020-10-13

申请号：US15784408

申请日：2017-10-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Obert R. Wood, II ,  Genevieve Beique ,  Yulu Chen ,  Erik Verduijn ,  Francis Goodwin

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

公开(公告)号：US20180144979A1

公开(公告)日：2018-05-24

申请号：US15359037

申请日：2016-11-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shao Beng Law ,  Genevieve Beique ,  Frank W. Mont ,  Lei Sun ,  Xunyuan Zhang

IPC: H01L21/768 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/76877 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76802

Abstract: Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

公开(公告)号：US10395926B1

公开(公告)日：2019-08-27

申请号：US15954736

申请日：2018-04-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Minghao Tang ,  Yuping Ren ,  Sean Xuan Lin ,  Shao Beng Law ,  Genevieve Beique ,  Xun Xiang ,  Rui Chen

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768

Abstract: Methods of self-aligned multiple patterning. A mandrel line is formed over a hardmask layer, and forming a block mask is formed over a first portion of the mandrel line that is linearly arranged between respective second portions of the mandrel line. After forming the first block mask, the second portions of the mandrel line are removed with an etching process to cut the mandrel line and expose respective portions of the hardmask layer. A second portion of the mandrel line is covered by the block mask during the etching process to define a mandrel cut in the mandrel line.

公开(公告)号：US20180286681A1

公开(公告)日：2018-10-04

申请号：US15478441

申请日：2017-04-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Erik A. Verduijn ,  Genevieve Beique ,  Nicholas V. LiCausi ,  Lei Sun ,  Francis G. Goodwin

IPC: H01L21/033 ,  H01L21/66

Abstract: The disclosure is directed to methods of identifying a space within an integrated circuit structure as a mandrel space or a non-mandrel space. One method may include: identifying a space between freestanding spacers as being one of: a former mandrel space created by removal of a mandrel from between the freestanding spacers or a non-mandrel space between adjacent mandrels prior to removal of the mandrel, based on a line width roughness of the space, wherein the line width roughness represents a deviation of a width of the space from a centerline axis along a length of the space.

公开(公告)号：US10056291B2

公开(公告)日：2018-08-21

申请号：US15360255

申请日：2016-11-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shao Beng Law ,  Xunyuan Zhang ,  Frank W. Mont ,  Genevieve Beique ,  Lei Sun

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L23/528 ,  H01L21/3205 ,  H01L21/285

CPC classification number: H01L21/76816

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.